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1.福州大学 物理与信息工程学院, 福建 福州 350108
2.中国福建光电信息科学与技术创新实验室, 福建 福州 350108
3.晋江市博感电子科技有限公司, 福建 泉州 362200
4.西安交通大学 电子信息学部, 陕西 西安 710049
[ "黄铭水(1998-),男,福建泉州人,硕士研究生,2020年于福建工程学院获得学士学位,主要从事氮化镓Micro-LED集成信息显示芯片制备、芯片键合的研究。E-mail:hmsi@foxmail.com" ]
[ "孙 捷(1977-),男,内蒙古阿拉善人,博士,教授,2007年于中国科学院半导体研究所获得博士学位,主要从事氮化镓Micro-LED集成信息显示、二维半导体材料生长及其在纳米电子学中应用的研究。E-mail:jie.sun@fzu.edu.cn" ]
收稿日期:2022-08-22,
修回日期:2022-09-08,
纸质出版日期:2022-12-05
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黄铭水, 聂君扬, 刘明洋, 等. 高分辨率主动驱动型氮化镓基Micro-LED芯片的制备[J]. 液晶与显示, 2022,37(12):1553-1560.
HUANG Ming-shui, NIE Jun-yang, LIU Ming-yang, et al. Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips[J]. Chinese journal of liquid crystals and displays, 2022, 37(12): 1553-1560.
黄铭水, 聂君扬, 刘明洋, 等. 高分辨率主动驱动型氮化镓基Micro-LED芯片的制备[J]. 液晶与显示, 2022,37(12):1553-1560. DOI: 10.37188/CJLCD.2022-0276.
HUANG Ming-shui, NIE Jun-yang, LIU Ming-yang, et al. Fabrication of high-resolution active matrix driven GaN-based Micro-LED chips[J]. Chinese journal of liquid crystals and displays, 2022, 37(12): 1553-1560. DOI: 10.37188/CJLCD.2022-0276.
本文设计并制备了一款分辨率为1 920×1 080的氮化镓基Micro-LED芯片。采用单次ICP(Inductively Coupled Plasma)刻蚀的方法完成电流扩展层的图案化和台面刻蚀,实现了电流扩展层和台面的自对准。同时,在制作过程中用HMDS (Hexamethyldisiloxane)提高光刻胶附着力,从根本上提高小尺寸台面刻蚀的一致性和完整性。此外,通过垫高N型电极解决了传统倒装芯片中P型电极和N型电极不等高的问题,有利于显示芯片与驱动芯片的键合。该芯片尺寸为17.78 mm (0.7 in),发光单元尺寸为6 μm,像素周期为8 μm,像素密度达到3 129 PPI。
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测试数据表明,所制备的Micro-LED的开启电压仅为3.5 V。
The fabrication of a high-resolution 1 920×1 080 active matrix GaN-based micro-display chip was presented in this paper. The patterning of the current spreading layer and mesa were completed with ICP (Inductively Coupled Plasma) dry etching in a single step, resulting in the so-called self-alignment processing. At the same time, HMDS (Hexamethyldisiloxane) was used to improve the adhesion of photoresist, that significantly improve the consistency and integrity of small-size mesa etching. Furthermore, the problem of unequal height of P-electrode and N-electrode in traditional flip-chip was solved by padding the N-electrode, which was beneficial to the bonding of display chip and driver chip. This chip had a size of 17.78 mm (0.7 in), a mesa size of 6 μm and a pixel pitch of 8 μm, and a high density of 3 129 PPI. The
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curve of a single Micro-LED pixel was measured and illustrated, which showed a turn-on voltage of 3.5 V.
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