“A study on oversized IGZO (InGaZnO) products shows that they are prone to abnormal display defects in high temperature and high humidity environments. After research, it was found that this is due to a significant positive shift in the transfer characteristic curve of the key device M2 in the integrated gate drive circuit during evaluation. The research team simulated the actual working environment of M2 through pulse experiments and revealed the main influencing factors causing adverse effects: when the M2 device is turned off, the pressure difference VDS between the drain and source is too large, which leads to the migration of oxygen vacancies VO+in the IGZO film layer and ultimately causes a positive shift in the transfer characteristic curve. The study also found that the migrated oxygen vacancies VO+can be restored after heating. In addition, the research team successfully imported large-sized IGZO products by reducing the VDS pressure difference when M2 devices were turned off without changing the IGZO film formation conditions, and no AD defects were observed in the high-temperature and high humidity reliability evaluation. This study provides a solution to the problem of poor display of large-sized IGZO products in high temperature and high humidity environments, opening up new directions for research and application in related fields.”