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Research progress of high mobility metal oxide semiconductor thin film transistors
Device Physics and Device Preparation | 更新时间：2024-05-15
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    • Research progress of high mobility metal oxide semiconductor thin film transistors

    • “科技新闻播报：随着平板显示和柔性显示产业的快速发展，金属氧化物半导体薄膜晶体管（MOS TFTs）因其卓越性能已成为关键技术。经过30多年的研究，非晶镓锌氧化物（a-IGZO）成功替代非晶硅（a-Si）应用于TFTs。然而，显示产业对更高生产效益、更佳显示性能（如高分辨率、高刷新率）和更低功耗的需求，推动了更高迁移率的MOS TFTs技术的发展。本文深入探讨了通过多元MOS材料实现MOS TFTs高迁移率特性的研究进展，并从固体物理学角度分析了迁移率与器件稳定性之间的关系。这一研究不仅为提升显示产业的技术水平提供了有力支持，也为MOS TFTs的未来发展指明了方向。随着研究的深入和技术的不断进步，我们有理由相信，MOS TFTs将在未来显示产业中发挥更加重要的作用，推动整个行业向更高水平迈进。”
      ”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 39, Issue 4, Pages: 447-465(2024)

    • DOI：10.37188/CJLCD.2024-0032    

      CLC： TN321+.5

    • Published：05 April 2024，

      Received：23 January 2024，

      Revised：14 February 2024，

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  • LI Qiang, GE Chunqiao, CHEN Lu, et al. Research progress of high mobility metal oxide semiconductor thin film transistors. [J]. Chinese Journal of Liquid Crystals and Displays 39(4):447-465(2024) DOI： 10.37188/CJLCD.2024-0032.

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DING Jin-duo
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LIANG Qi-ying
ZHONG Wei-ping
LI Qiang
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CHEN Lu
XIE Yihan

Related Institution

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School of Electrical Engineering and Computer Science， Jilin Jianzhu University
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