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Research progress of high mobility metal oxide semiconductor thin film transistors
Device Physics and Device Preparation | 更新时间:2024-05-15
    • Research progress of high mobility metal oxide semiconductor thin film transistors

    • Technology News Broadcast: With the rapid development of flat panel and flexible display industries, metal oxide semiconductor thin film transistors (MOS TFTs) have become a key technology due to their excellent performance. After more than 30 years of research, amorphous gallium zinc oxide (a-IGZO) has successfully replaced amorphous silicon (a-Si) in the application of TFTs. However, the demand for higher production efficiency, better display performance (such as high resolution, high refresh rate), and lower power consumption in the display industry has driven the development of MOS TFTs technology with higher mobility. This article explores in depth the research progress on achieving high mobility characteristics of MOS TFTs through multi-element MOS materials, and analyzes the relationship between mobility and device stability from the perspective of solid-state physics. This research not only provides strong support for improving the technological level of the display industry, but also points out the direction for the future development of MOS TFTs. With the deepening of research and continuous advancement of technology, we have reason to believe that MOS TFTs will play a more important role in the future display industry, driving the entire industry towards a higher level.
    • Chinese Journal of Liquid Crystals and Displays   Vol. 39, Issue 4, Pages: 447-465(2024)
    • DOI:10.37188/CJLCD.2024-0032    

      CLC: TN321+.5
    • Received:23 January 2024

      Revised:14 February 2024

      Published:05 April 2024

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  • LI Qiang, GE Chunqiao, CHEN Lu, et al. Research progress of high mobility metal oxide semiconductor thin film transistors[J]. Chinese journal of liquid crystals and displays, 2024, 39(4): 447-465. DOI: 10.37188/CJLCD.2024-0032.

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DING Jin-duo
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