您当前的位置:
首页 >
文章列表页 >
Performances and preparation of zinc-tin oxide thin-film transistors
Device Physics and Device Preparation | 更新时间:2024-02-21
    • Performances and preparation of zinc-tin oxide thin-film transistors

    • Chinese Journal of Liquid Crystals and Displays   Vol. 39, Issue 1, Pages: 40-47(2024)
    • DOI:10.37188/CJLCD.2023-0349    

      CLC:

    扫 描 看 全 文

  • CHU Xuefeng, HU Xiaojun, ZHANG Qi, et al. Performances and preparation of zinc-tin oxide thin-film transistors. [J]. Chinese Journal of Liquid Crystals and Displays 39(1):40-47(2024) DOI: 10.37188/CJLCD.2023-0349.

  •  
  •  

0

Views

42

下载量

0

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Preparation and properties of oxide thin film transistors on polyvinyl alcohol substrate
Inkjet printing PVP dielectric for flexible thin film transistor
New Current-Programmed Active-Matrix Organic Light-Emitting Diode Pixel Circuit
Analyses of Several Current Programmed AM OLED Pixel Circuits and Their Current Scaling Ratio

Related Author

No data

Related Institution

Jilin Normal University
School of Electrical Engineering and Computer Science, Jilin Jianzhu University
Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry, Jilin Jianzhu University
Changchun Cedar Electronics Technology Co., Ltd.
Institute of Polymer Optoelectronic Materials and Devices, Guangzhou NewVision Optoelectronic Technology Co., Ltd.
0