Research progress on crystalline IGZO thin film transistor

JIANG Bai-qi; LIU Bin; LIU Xian-wen; ZHANG Shuo; WENG Le; SHI Da-wei; GUO Jian; SU Shun-kang; YAO Qi; NING Ce; YUAN Guang-cai; WANG Feng; YU Zhi-nong

doi:10.37188/CJLCD.2023-0121

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Research progress on crystalline IGZO thin film transistor

Device Physics and Device Preparation | 更新时间：2023-08-10

- Research progress on crystalline IGZO thin film transistor
- Chinese Journal of Liquid Crystals and Displays Vol. 38, Issue 8, Pages: 1031-1046(2023)
- 作者机构：
  
  1.北京理工大学光电学院，北京市混合现实与先进显示技术工程研究中心，北京 100081
  2.重庆京东方显示技术有限公司，重庆 400714
  3.北京京东方显示技术有限公司，北京 101520
- 作者简介：
- 基金信息：
  
  National Key R&D Program of China(2021YFB3600703)
- DOI：10.37188/CJLCD.2023-0121
  CLC：
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JIANG Bai-qi, LIU Bin, LIU Xian-wen, et al. Research progress on crystalline IGZO thin film transistor. [J]. Chinese Journal of Liquid Crystals and Displays 38(8):1031-1046(2023)
DOI：

JIANG Bai-qi, LIU Bin, LIU Xian-wen, et al. Research progress on crystalline IGZO thin film transistor. [J]. Chinese Journal of Liquid Crystals and Displays 38(8):1031-1046(2023) DOI： 10.37188/CJLCD.2023-0121.

摘要

随着显示技术的不断发展，对高性能、高稳定性的薄膜晶体管（Thin Film Transistor，TFT）的需求日趋增加，通过结晶改善薄膜晶体管性能的方法受到大量关注。当前，铟镓锌氧化物（IGZO）材料由于具有迁移率高、柔性好、透明度高等优势，被广泛用于薄膜晶体管的沟道中，而改善IGZO沟道层的结晶形态也成为研究热点。本文总结了晶态IGZO薄膜晶体管器件的研究进展，详细介绍了IGZO系化合物的晶体结构，重点阐述了单晶、,c,轴取向结晶、六方多晶型、尖晶石型、纳米晶型和原生结晶型IGZO的结构和各晶态IGZO薄膜晶体管的制备方法、器件性能和稳定性，深入分析其微观结构，总结物理特性，阐述不同晶系结构的结晶机理，建立不同晶体结构与电学特性的关系，最后对晶态IGZO薄膜晶体管的发展进行展望。

Abstract

With the development of display technology， the demand for high-performance and high-stability thin film transistors （TFTs） is increasing. The method of improving the performance of thin film transistors through crystallization has received a lot of attention. Currently， indium gallium zinc oxide （IGZO） materials are widely used in the channels of thin film transistors due to their advantages such as high mobility， flexibility， and high transparency. Improving the crystalline morphology of the IGZO channel layer has become a research hotspot. This article summarizes the research progress of crystalline IGZO thin film transistor devices， introduces in detail the crystal structure of IGZO compounds， and focuses on the structure of single crystalline， ,c,-axis-aligned crystalline， hexagonal polycrystalline， spinel， nanocrystalline， and protocrystalline IGZO， as well as the preparation methods， device performance， and stability of various crystalline IGZO thin-film transistors. We also analyze the microstructure of crystalline IGZO， summarize the physical properties， describe the crystallization mechanism and establish the relationship between crystal structure and electrical properties. At last， the development of crystalline IGZO thin film transistor is prospected.

关键词

晶态IGZO薄膜薄膜晶体管晶体结构研究进展

Keywords

crystalline IGZO filmthin film transistorcrystal structureresearch progress

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