Loading effect and solutions in gate etching process for TFT

LIU Dan; HUANG Zhong-hao; HUANG Sheng; FANG Liang; CHEN Qi-chao; GUAN Fei; WU Liang-dong; WU Xu; LI Yan-qiu; LIN Hong-tao

doi:10.37188/CJLCD.2023-0105

您当前的位置：

首页 >

文章列表页 >

Loading effect and solutions in gate etching process for TFT

Device Physics and Device Preparation | 更新时间：2023-08-10

- Loading effect and solutions in gate etching process for TFT
- Chinese Journal of Liquid Crystals and Displays Vol. 38, Issue 8, Pages: 1054-1061(2023)
- 作者机构：
  
  1.重庆大学物理学院，重庆 400044
  2.重庆京东方光电科技有限公司，重庆 400700
  3.北京京东方显示技术有限公司，北京 100176
- 作者简介：
- 基金信息：
  
  Natural Science Foundation of Chongqing(cstc2019jcyj-msxmX0566);Scientific and Technological Project of Chongqing BOE Optoelectronics Technology Co., Ltd(212927);Sharing Fund of Large Scale Equipment of Chongqing University(202203150041)
- DOI：10.37188/CJLCD.2023-0105
  CLC：
扫描看全文
LIU Dan, HUANG Zhong-hao, HUANG Sheng, et al. Loading effect and solutions in gate etching process for TFT. [J]. Chinese Journal of Liquid Crystals and Displays 38(8):1054-1061(2023)
DOI：

LIU Dan, HUANG Zhong-hao, HUANG Sheng, et al. Loading effect and solutions in gate etching process for TFT. [J]. Chinese Journal of Liquid Crystals and Displays 38(8):1054-1061(2023) DOI： 10.37188/CJLCD.2023-0105.

摘要

在薄膜晶体管（Thin film transistor，TFT）的栅极（Gate）刻蚀制程中，显示区（AA区）和引线区（Fanout区）因布线密度差异而存在刻蚀负载效应，两区域刻蚀程度差异大，刻蚀时间难以确定。抑制栅极刻蚀制程中的刻蚀负载效应，对品质确保具有积极意义。本文分析了湿法刻蚀微观过程，提出增加刻蚀液喷淋流量抑制刻蚀负载效应的方案。将增加喷淋流量的方案转化为调节3个刻蚀腔室（Etch1~Etch3）的刻蚀时间比例。在总刻蚀时间不变的前提下，进行3腔室不同时间比例的刻蚀验证，并对刻蚀结果进行聚类分析。最后，优选出抑制刻蚀负载效应的时间比例，并结合神经网络分析，对结果进行解析。实验结果表明，降低Etch3时间比例，增加Etch2时间比例，刻蚀负载效应可以被抑制。Etch1~Etch3的时间比例由33.33%∶33.33%∶33.33%调整为10%∶80%∶10%，AA区和fanout区刻蚀程度差异由0.575 μm下降为0.317 μm。通过调节3个刻蚀区间的时间比例，可以抑制刻蚀负载效应，缓解不同区域刻蚀程度差异，满足TFT量产需求。

Abstract

In the gate etching process of thin film transistor （TFT）， there is a loading effect in the active area （AA area） and fanout area due to the difference in layout density. The etching time is difficult to determine because of the large difference in the etching degree between the two areas. It is urgent to suppress the loading effect in the Gate etching process for quality assurance. The wet etching microprocess was analyzed， and a scheme to increase the etchant spray flow rate to suppress the etch loading effect was proposed. The scheme of increasing flow rate was translated into the adjustment of the etching time ratio of the 3 etching chambers （Etch1~Etch3）. The verification of etching with different time ratios of the 3 chambers was performed with the total etching time unchanged， and the etching results were clustered and analyzed. Finally， the time ratio that suppresses the loading effect is preferably selected and the results are analyzed in conjunction with neural network. The results show that the loading effect can be suppressed by decreasing the Etch3 time ratio and increasing the Etch2 time ratio. The time ratio of Etch1~Etch3 is adjusted from 33.33%∶33.33%∶33.33% to 10%∶80%∶10%， and the difference of etching degree between AA and fanout area is decreased from 0.575 μm to 0.317 μm. By adjusting the time ratio among the three etching zones， the etching loading effect can be suppressed to alleviate the difference in etching degree in different areas to meet the TFT mass production requirements.

关键词

栅极湿法刻蚀负载效应聚类分析神经网络

Keywords

gate electrodeswet etchloading effectcluster analysisneural networks

references

李继军，聂晓梦，李根生，等.平板显示技术比较及研究进展［J］.中国光学，2018，11（5）：695-710. doi: 10.3788/CO.20181105.0695http://dx.doi.org/10.3788/CO.20181105.0695

LI J J， NIE X M， LI G S， et al. Comparison and research progress of flat panel display technology ［J］. Chinese Optics， 2018， 11（5）： 695-710. （in Chinese）. doi: 10.3788/CO.20181105.0695http://dx.doi.org/10.3788/CO.20181105.0695

李继军，聂晓梦，甄威，等.显示技术比较及新进展［J］.液晶与显示，2018，33（1）：74-84. doi: 10.3788/YJYXS20183301.0074http://dx.doi.org/10.3788/YJYXS20183301.0074

LI J J， NIE X M， ZHEN W， et al. New developments and comparisons in display technology ［J］. Chinese Journal of Liquid Crystals and Displays， 2018， 33（1）： 74-84. （in Chinese）. doi: 10.3788/YJYXS20183301.0074http://dx.doi.org/10.3788/YJYXS20183301.0074

刘丹，黄中浩，刘毅，等.光刻胶剥离制程中的寄生栅极效应［J］.液晶与显示，2022，37（10）：1317-1325. doi: 10.37188/CJLCD.2022-0160http://dx.doi.org/10.37188/CJLCD.2022-0160

LIU D， HUANG Z H， LIU Y， et al. Parasitic gate effect in photo-resist strip process ［J］. Chinese Journal of Liquid Crystals and Displays， 2022， 37（10）： 1317-1325. （in Chinese）. doi: 10.37188/CJLCD.2022-0160http://dx.doi.org/10.37188/CJLCD.2022-0160

彭军.纯铝磁控溅射小丘的改善方法研究［D］.广州：华南理工大学，2019.

PENG J. Research on the method of hillock-free pure aluminum sputter deposition ［D］. Guangzhou： South China University of Technology， 2019. （in Chinese）

罗东向.新型金属氧化物薄膜晶体管的性能研究及工艺开发［D］.广州：华南理工大学，2014.

LUO D X. Studies on performance and process development of novel metal oxide thin film transistors ［D］. Guangzhou： South China University of Technology， 2014. （in Chinese）

HWANG S J， LEE J H， JEONG C O， et al. Effect of film thickness and annealing temperature on hillock distributions in pure Al films ［J］. Scripta Materialia， 2007， 56（1）： 17-20. doi: 10.1016/j.scriptamat.2006.09.001http://dx.doi.org/10.1016/j.scriptamat.2006.09.001

IWAMURA E， TAKAGI K， OHNISHI T. Effect of aluminium oxide caps on hillock formation in aluminium alloy films ［J］. Thin Solid Films， 1999， 349（1/2）： 191-198. doi: 10.1016/s0040-6090(99)00220-5http://dx.doi.org/10.1016/s0040-6090(99)00220-5

ONISHI T， IWAMURA E， TAKAGI K， et al. Effects of Nd content in Al thin films on hillock formation ［J］. Journal of Vacuum Science & Technology A， 1997， 15： 2339-2348. doi: 10.1116/1.580745http://dx.doi.org/10.1116/1.580745

ARAI T， MAKITA A， HIROMASU Y， et al. Mo-capped Al-Nd alloy for both gate and data bus lines of liquid crystal displays ［J］. Thin Solid Films， 2001， 383（1/2）： 287-291. doi: 10.1016/s0040-6090(00)01794-6http://dx.doi.org/10.1016/s0040-6090(00)01794-6

张家祥，王彦强，卢凯，等.TFT-LCD器件Al电极TFT特性研究［J］.液晶与显示，2017，32（6）：433-437. doi: 10.3788/yjyxs20173206.0433http://dx.doi.org/10.3788/yjyxs20173206.0433

ZHANG J X， WANG Y Q， LU K， et al. TFT character of Al electrode in TFT-LCD ［J］. Chinese Journal of Liquid Crystals and Displays， 2017， 32（6）： 433-437. （in Chinese）. doi: 10.3788/yjyxs20173206.0433http://dx.doi.org/10.3788/yjyxs20173206.0433

刘丹，秦刚，蔡卫超，等.Mo/Al/Mo结构电极的坡度角和关键尺寸差研究［J］.液晶与显示，2017，32（11）：877-885.

LIU D， QIN G， CAI W C， et al. Profile and critical dimension bias of Mo/Al/Mo electrode ［J］. Chinese Journal of Liquid Crystals and Displays， 2017， 32（11）： 877-885. （in Chinese）

BUROKAS V， MARTUSHENE A， BIKUL’CHYUS G， et al. Aluminum alloy etching in phosphoric acid solutions ［J］. Russian Journal of Applied Chemistry， 2009， 82（10）： 1835-1839. doi: 10.1134/s1070427209100176http://dx.doi.org/10.1134/s1070427209100176

WANG Y C， LU W H， CHEN H B， et al. Synergetic effect of aluminum and Mo/Al etching in phosphoric acid-based etchant with nitric acid ［J］. Journal of the Electrochemical Society， 2012， 159（2）： D103-D107. doi: 10.1149/2.069202jeshttp://dx.doi.org/10.1149/2.069202jes

KIM I S， JEON I C. Dissolution of Mo/Al bilayers in phosphoric acid ［J］. Bulletin of the Korean Chemical Society， 2003， 24（11）： 1613-1617. doi: 10.5012/bkcs.2003.24.11.1613http://dx.doi.org/10.5012/bkcs.2003.24.11.1613

TSUJIMURA T， MAKITA ATSUYA M. Molybdenum/aluminum stacked metal taper etching for high-resolution thin-film transistor liquid-crystal display ［J］. Journal of Vacuum Science & Technology B， 2002， 20（5）： 1907-1913. doi: 10.1116/1.1502704http://dx.doi.org/10.1116/1.1502704

PARK Y C， UM J G， MATIVENGA M， et al. Modification of electrode-etchant for sidewall profile control and reduced back-channel corrosion of inverted-staggered metal-oxide TFTs ［J］. ECS Journal of Solid State Science and Technology， 2015， 4（12）： Q124-Q129. doi: 10.1149/2.0181512jsshttp://dx.doi.org/10.1149/2.0181512jss

叶振华，郭靖，胡晓宁，等.HgCdTe焦平面探测阵列干法技术的刻蚀速率研究［J］.激光与红外，2005，35（11）：829-831. doi: 10.3969/j.issn.1001-5078.2005.11.009http://dx.doi.org/10.3969/j.issn.1001-5078.2005.11.009

YE Z H， GUO J， HU X N， et al. A study on etch rate of dry technique for HgCdTe IRFPAs ［J］. Laser & Infrared， 2005， 35（11）： 829-831. （in Chinese）. doi: 10.3969/j.issn.1001-5078.2005.11.009http://dx.doi.org/10.3969/j.issn.1001-5078.2005.11.009

龚晓丹，韩福忠.碲镉汞干法刻蚀速率的微负载效应研究［J］.红外技术，2014，36（10）：832-835.

GONG X D， HAN F Z. Study on micro-loading effect of etching rate of dry etching for HgCdTe ［J］. Infrared Technology， 2014， 36（10）： 832-835. （in Chinese）

ENOMOTO T， DENDA M， YASUOKA A， et al. Loading effect and temperature dependence of etch rate in CF4 plasma ［J］. Japanese Journal of Applied Physics， 1979， 18（1）： 155-163. doi: 10.1143/jjap.18.155http://dx.doi.org/10.1143/jjap.18.155

马逢时，吴诚鸥，蔡霞.基于MINITAB的现代实用统计［M］.第3版.北京：中国人民大学出版社，2022.

MA F S， WU C O， CAI X. The Advanced Applied Statistics Using MINITAB ［M］. 3rd ed. Beijing： China Renmin University Press， 2022. （in Chinese）

Views

117

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Underwater image enhancement method combining feature fusion and physical correction

Target event classification method through thinly scattered media

Real-time detection model of highway vehicle based on YOLOv5s

Trend and influence of ITO etchant concentration under mass production conditions

Related Author

No data

Related Institution

Beijing BOE Display Technology Co.， Ltd

Chongqing BOE Optoelectronics Technology Co. ， Ltd

School of Information， Shanghai Ocean University

School of Optics and Photonics, Beijing Institute of Technology

School of Information Engineering， Ningxia University

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China 130033 Postal code：130033
Tel：0431-86176059 Email：yjxs@ciomp.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰