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Review of low-temperature polycrystalline silicon oxide display driving technology and hydrogen diffusion behavior
Device Physics and Device Preparation | 更新时间：2025-08-13

    • Review of low-temperature polycrystalline silicon oxide display driving technology and hydrogen diffusion behavior

    • “Research progress on low-temperature polycrystalline silicon oxide semiconductor hybrid integrated display technology, experts have explored hydrogen barrier methods to provide solutions for improving display product performance.”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 40, Issue 8, Pages: 1100-1114(2025)

    • DOI：10.37188/CJLCD.2025-0074    

      CLC： TN321+.5
    • CSTR：32172.14.CJLCD.2025-0074    

    • Received：02 April 2025，

      Revised：12 May 2025，

      Published：05 August 2025

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  • ZHANG Xi, LIU Bin, ZHANG Shuo, et al. Review of low-temperature polycrystalline silicon oxide display driving technology and hydrogen diffusion behavior[J]. Chinese journal of liquid crystals and displays, 2025, 40(8): 1100-1114. DOI： 10.37188/CJLCD.2025-0074. CSTR： 32172.14.CJLCD.2025-0074.

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ZHANG Xi
LIU Bin
ZHANG Shuo
WEN Congyang
YAO Qi
GUO Jian
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YUAN Guangcai

Related Institution

BOE Technology Group Co Ltd.
School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display，Beijing Institute of Technology
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School of Optics and Photonics， Beijing Engineering Research Center of Mixed Reality and Advanced Display， Beijing Institute of Technology
Department of Intelligent Manufacturing, Wuyi University
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