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Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters
Device Physics and Device Preparation | 更新时间：2025-09-08

    • Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters

    • “The latest research reveals that the performance of aluminum zinc tin oxide thin film transistors significantly improves with the optimization of active layer thickness, providing new ideas for logic circuit applications.”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 40, Issue 9, Pages: 1258-1267(2025)

    • DOI：10.37188/CJLCD.2025-0133    

      CLC： TN321+.5
    • CSTR：32172.14.CJLCD.2025-0133    

    • Received：25 June 2025，

      Revised：2025-07-19，

      Published：05 September 2025

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  • KU Laizhe, WANG Chao, GUO Liang, et al. Influence of active layer thickness on performance of Al-Zn-Sn-O thin-film transistors and inverters[J]. Chinese journal of liquid crystals and displays, 2025, 40(9): 1258-1267. DOI： 10.37188/CJLCD.2025-0133. CSTR： 32172.14.CJLCD.2025-0133.

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