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Effect of atmosphere dependent annealing on the preparation and properties of MgZnO thin-film transistors
Device Physics and Device Preparation | 更新时间：2024-10-09
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    • Effect of atmosphere dependent annealing on the preparation and properties of MgZnO thin-film transistors

    • “In the semiconductor field, researchers have prepared MgZnO thin films using radio frequency magnetron sputtering and found that vacuum annealing treatment can significantly improve device performance. The field-effect mobility increases to 0.29 cm2 · V-1 · s-1, the threshold voltage drops to 2.28 V, and the current switching ratio reaches 1.68 × 10 ^ 6, providing new ideas for improving TFT electrical stability.”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 39, Issue 10, Pages: 1295-1303(2024)

    • DOI：10.37188/CJLCD.2024-0209    

      CLC： TN321+.5

    • Received：23 July 2024，

      Revised：11 September 2024，

      Published：05 October 2024

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  • WANG Chao, HAO Yunpeng, GUO Liang, et al. Effect of atmosphere dependent annealing on the preparation and properties of MgZnO thin-film transistors[J]. Chinese journal of liquid crystals and displays, 2024, 39(10): 1295-1303. DOI： 10.37188/CJLCD.2024-0209.

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Related Author

QIAO Guoguang
YANG Fan
GUO Liang
HAO Yunpeng
WANG Chao
MU Quanquan
LIU Yonggang
PENG Zenghui

Related Institution

Weipai Automotive Electronics （Changchun） Co.， Ltd
Changchun Institute of Optics， Fine Mechanics and Physics， Chinese Academy of Sciences
Department of Electronic Engineering， Shanghai Jiao Tong University
College of Physics and Energy， Fujian Normal University
National Engineering Laboratory of Special Display Technology， Anhui Province Key Laboratory of Measuring Theory and Precision Instrument， Academy of Opto-electric Technology， Hefei University of Technology
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