Flexible HfO2/Ta2O5 stacking gate dielectric ZnO thin film transistor

Wei-tao HU; Fan YANG; Xiao-tian YANG; Chao WANG; Yan-jie WANG; Ming-yang SUN

doi:10.37188/CJLCD.2022-0125

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Flexible H_fO₂/Ta₂O₅ stacking gate dielectric ZnO thin film transistor

Device Physics and Device Preparation | 更新时间：2022-09-26

- Flexible H_fO₂/Ta₂O₅ stacking gate dielectric ZnO thin film transistor
- Chinese Journal of Liquid Crystals and Displays Vol. 37, Issue 10, Pages: 1310-1316(2022)
- 作者机构：
  
  1.吉林建筑大学电气与计算机学院，吉林省建筑电气综合节能重点实验室，吉林长春 130118
  2.吉林建筑大学寒地建筑综合节能教育部重点实验室，吉林长春 130118
  3.吉林师范大学，吉林四平 136099
- 作者简介：
- 基金信息：
  
  Natural Science Foundation of Jilin Province(20200201177JC;20210203021SF);Supported by Jilin Fundamental Research Funds under the Guidance of the Central Government for Local Scientific and Technological Development(202002012JC);Jilin Education Department Program(JJKH20210256KJ;JJKH20210277KJ;JJKH20210276KJ)
- DOI：10.37188/CJLCD.2022-0125
  CLC： TN321⁺.5
- Received：14 April 2022，
  
  Revised：14 May 2022，
  
  Published：05 October 2022
- 稿件说明：
移动端阅览
Wei-tao HU, Fan YANG, Xiao-tian YANG, et al. Flexible H_fO₂/Ta₂O₅ stacking gate dielectric ZnO thin film transistor[J]. Chinese journal of liquid crystals and displays, 2022, 37(10): 1310-1316.
DOI：

Wei-tao HU, Fan YANG, Xiao-tian YANG, et al. Flexible H_fO₂/Ta₂O₅ stacking gate dielectric ZnO thin film transistor[J]. Chinese journal of liquid crystals and displays, 2022, 37(10): 1310-1316. DOI： 10.37188/CJLCD.2022-0125.

摘要

为了有效提高柔性薄膜晶体管的电学性能，室温条件下，在聚酰亚胺（PI）衬底上使用

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、

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两种高介电常数材料相结合的叠层结构代替单层

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作为栅电介质，探究其对器件电学性能的影响。采用磁控溅射法制备薄膜，研究了叠层栅电介质结构中

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层在不同溅射时长、不同氧氩比条件下对于器件电学性能的影响，并进行

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3.21733332

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叠层栅电介质器件与

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单层栅电介质器件的比较。结果表明，

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栅电介质层在溅射时长为1 h、氧氩比为10∶90时，器件电学性能达到最佳。叠层栅电介质结构的引入显著提高了器件电学性能，电流开关比为1.27×

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，阈值电压为9.1 V，亚阈值摆幅为0.54 V/decade，载流子迁移率为7.03

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/（V·s）。

Abstract

In order to effectively improve the electrical properties of flexible thin film transistors，

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and

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were used on polyimide （PI） substrates at room temperature. The stack structure combining two high dielectric constant materials replaces the single layer

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as the gate dielectric to explore its effect on the device electrical properties. The thin films were prepared by magnetron sputtering， and the effects of

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layers in the stacking gate dielectric structure on the device electrical properties under different sputtering time and different oxygen-argon ratio were investigated. The

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stacking gate dielectric devices were compared to

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single-layer gate dielectric devices. The results show that when the sputtering time of

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gate dielectric layer is 1 h and the ratio of oxygen to argon is 10∶90， the electrical performance of the device is the best. Moreover， the introduction of the stacking gate dielectric structure significantly improves the electrical performance of the device with the

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ratio of 1.27×

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， the threshold voltage of 9.1 V， the subthreshold slope of 0.54 V/decade and the carrier mobility of 7.03

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/（V·s）.

关键词

Keywords

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