

浏览全部资源
扫码关注微信
1.中国科学院 宁波材料技术与工程研究所 原子尺度与微纳制造实验室, 浙江 宁波 315201
2.中国科学院大学 材料科学与光电技术学院, 北京 100049
Received:13 March 2026,
Revised:2026-03-20,
Published:05 April 2026
移动端阅览
XIONG Yuting, REN Junyan, LIANG Lingyan, et al. Analysis of research status and development trends in oxide semiconductor thin-film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2026, 41(4): 509-522.
XIONG Yuting, REN Junyan, LIANG Lingyan, et al. Analysis of research status and development trends in oxide semiconductor thin-film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2026, 41(4): 509-522. DOI: 10.37188/CJLCD.2026-0036. CSTR: 32172.14.CJLCD.2026-0036.
氧化物半导体薄膜晶体管(Oxide Semiconductor Thin-film Transistor, OS TFT)以其高迁移率、优良均匀性与低制造成本等优势,已成为高端显示技术的核心驱动元件,并逐步向传感、存储、类脑计算等集成系统领域拓展。本文基于Web of Science与Incopat数据库,对2016~2025年间的OS TFT领域的科研论文与专利数据进行了系统性分析。研究发现,全球研发活动高度集中于东亚地区,中国与韩国在论文与专利产出方面领先。然而,该领域存在明显的学术-产业失衡:90%以上论文来自高校及科研院所,而81.01%的专利由企业持有,产学研转化不足。同时,专利集中度偏低,技术壁垒尚未形成;上游关键材料溅射靶材仍由日本主导(占比54.55%),对中国产业链安全构成潜在风险。未来,OS TFT将突破传统显示驱动,与传感、存储与类脑计算等领域深度融合,本文就其在这些领域中的发展趋势及存在问题进行了分析。
Oxide semiconductor thin-film transistor(OS TFT) has become a core driving component of high-end display technology due to its advantages such as high mobility, excellent uniformity and low manufacturing cost, and is gradually expanding into integrated system fields such as sensors, memory, and neuromorphic computing. Based on the Web of Science and Incopat databases, this paper conducts a systematic analysis on the scientific research papers and patent data in the field of OS TFT from 2016 to 2025. Research has found that global R&D activities are highly concentrated in East Asia, with China and South Korea leading in the output of papers and patents. However, there is a clear academic-industry imbalance in this field: over 90% of the papers come from universities and research institutes, while 81.01% of the patents are held by enterprises, and the transformation of research into applications is insufficient. Meanwhile, the concentration of patents is relatively low, and technological barriers have yet to be formed. The key upstream material, sputtering targets, are still dominated by Japan (accounting for 54.55%), posing a potential risk to the security of China’s industrial chain. In the future, OS TFT is poised to move beyond conventional display driving, forging deep convergence with sensor, memory, and neuromorphic computing.
TORSI L , DODABALAPUR A , SABBATINI L , et al . Multi-parameter gas sensors based on organic thin-film-transistors [J]. Sensors and Actuators B: Chemical , 2000 , 67 ( 3 ): 312 - 316 . doi: 10.1016/s0925-4005(00)00541-4 http://dx.doi.org/10.1016/s0925-4005(00)00541-4
TIWARI B , SHRIVASTAVA S , BAHUBALINDRUNI P G . Smart digital capacitance sensing system using IGZO TFTs on flexible substrate [J]. IEEE Transactions on Circuits and Systems Ⅱ: Express Briefs , 2024 , 71 ( 1 ): 425 - 429 . doi: 10.1109/tcsii.2023.3297856 http://dx.doi.org/10.1109/tcsii.2023.3297856
ZUI T , HEWEI S , XIDONG Z , et al . Highly sensitive and selective H 2 O 2 sensors based on ZnO TFT using PBNCs/Pt-NPs/TNTAs as gate electrode [J]. Sensors and Actuators B: Chemical , 2021 , 349 : 130791 . doi: 10.1016/j.snb.2021.130791 http://dx.doi.org/10.1016/j.snb.2021.130791
CHEN H T , HSIEH S I , LIN C J , et al . Embedded TFT nand-type nonvolatile memory in panel [J]. IEEE Electron Device Letters , 2007 , 28 ( 6 ): 499 - 501 . doi: 10.1109/LED.2007.896894 http://dx.doi.org/10.1109/LED.2007.896894
YAN S Z , CONG Z R , LU N D , et al . Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications [J]. Science China Information Sciences , 2023 , 66 ( 10 ): 200404 . doi: 10.1007/s11432-023-3802-8 http://dx.doi.org/10.1007/s11432-023-3802-8
HONG R H , LIU H Z , XU X X , et al . Symmetrical ambipolar transport in SnO thin-film transistors enabled by dopant-induced preferential crystal orientation toward complementary logic [J]. Nano Letters , 2025 , 25 ( 43 ): 15698 - 15704 . doi: 10.1021/acs.nanolett.5c04300 http://dx.doi.org/10.1021/acs.nanolett.5c04300
SARAVANAN A , SUPRAJA G , SHARMILA P , et al . Thin-film transistors: Materials, architecture, and emerging applications in flexible and wearable electronics [J]. Materials Science in Semiconductor Processing , 2026 , 211 : 110713 . doi: 10.1016/j.mssp.2026.110713 http://dx.doi.org/10.1016/j.mssp.2026.110713
ZHANG J H , CHENG C C , ZHANG H , et al . Dual-parameter and high-density sensor array based on a-IGZO thin film transistors [J]. IEEE Electron Device Letters , 2024 , 45 ( 7 ): 1301 - 1304 . doi: 10.1109/led.2024.3394855 http://dx.doi.org/10.1109/led.2024.3394855
CANTLEY K D , SUBRAMANIAM A , STIEGLER H J , et al . Hebbian learning in spiking neural networks with nanocrystalline silicon TFTs and memristive synapses [J]. IEEE Transactions on Nanotechnology , 2011 , 10 ( 5 ): 1066 - 1073 . doi: 10.1109/TNANO.2011.2105887 http://dx.doi.org/10.1109/TNANO.2011.2105887
SOLOMASHENKO A B , AFANASEVA O L , SHISHOVA M V , et al . Industrial applications of AR headsets: a review of the devices and experience [J]. Light: Advanced Manufacturing , 2025 , 6 ( 2 ): 358 - 387 .
XIONG J H , WU S T . Planar liquid crystal polarization optics for augmented reality and virtual reality: from fundamentals to applications [J]. eLight , 2021 , 1 ( 1 ): 3 . doi: 10.1186/s43593-021-00003-x http://dx.doi.org/10.1186/s43593-021-00003-x
吴怡然 , 孙勉 , 曹可慰 , 等 . 液晶显示材料标准化发展建议 [J]. 液晶与显示 , 2023 , 38 ( 2 ): 181 - 187 . doi: 10.37188/cjlcd.2022-0298 http://dx.doi.org/10.37188/cjlcd.2022-0298
WU Y R , SUN M , CAO K W , et al . Suggestions on the development of standardization of liquid crystal display materials [J]. Chinese Journal of Liquid Crystals and Displays , 2023 , 38 ( 2 ): 181 - 187 . (in Chinese) . doi: 10.37188/cjlcd.2022-0298 http://dx.doi.org/10.37188/cjlcd.2022-0298
LIU C , HUANG W T , LIU R S . Stable glass-protected CsPbX 3 (X=Cl, Br, and I) perovskite quantum dots and their applications in backlight LED [J]. Progress in Materials Science , 2024 , 143 : 101243 .
KIM H M , CHOI S H , JEONG H J , et al . Highly dense and stable p-type thin-film transistor based on atomic layer deposition SnO fabricated by two-step crystallization [J]. ACS Applied Materials & Interfaces , 2021 , 13 ( 26 ): 30818 - 30825 . doi: 10.1021/acsami.1c06038 http://dx.doi.org/10.1021/acsami.1c06038
BAE J H , LEE J H , PARK S P , et al . Gallium doping effects for improving switching performance of p-type copper(I) oxide thin-film transistors [J]. ACS Applied Materials & Interfaces , 2020 , 12 ( 34 ): 38350 - 38356 . doi: 10.1021/acsami.0c09243 http://dx.doi.org/10.1021/acsami.0c09243
LIU A , ZHU H H , GUO Z D , et al . Solution combustion synthesis: low-temperature processing for p-type Cu:NiO thin films for transparent electronics [J]. Advanced Materials , 2017 , 29 ( 34 ): 1701599 . doi: 10.1002/adma.201701599 http://dx.doi.org/10.1002/adma.201701599
ZHANG H B , LIANG L Y , WANG X L , et al . Praseodymium-doped In-Sn-Zn-O TFTs with effective improvement of negative-bias illumination stress stability [J]. IEEE Transactions on Electron Devices , 2022 , 69 ( 1 ): 152 - 155 . doi: 10.1109/ted.2021.3126278 http://dx.doi.org/10.1109/ted.2021.3126278
黄湘兰 , 彭俊彪 . 稀土掺杂金属氧化物薄膜晶体管研究进展 [J]. 发光学报 , 2025 , 46 ( 3 ): 436 - 451 . doi: 10.37188/cjl.20240268 http://dx.doi.org/10.37188/cjl.20240268
HUANG X L , PENG J B . Research progress on rare earth doped metal oxide thin film transistors [J]. Chinese Journal of Luminescence , 2025 , 46 ( 3 ): 436 - 451 . (in Chinese) . doi: 10.37188/cjl.20240268 http://dx.doi.org/10.37188/cjl.20240268
初学峰 , 胡小军 , 张祺 , 等 . 氧化锌锡薄膜晶体管的制备与性能研究 [J]. 液晶与显示 , 2024 , 39 ( 1 ): 40 - 47 . doi: 10.37188/CJLCD.2023-0349 http://dx.doi.org/10.37188/CJLCD.2023-0349
CHU X F , HU X J , ZHANG Q , et al . Performances and preparation of zinc-tin oxide thin-film transistors [J]. Chinese Journal of Liquid Crystals and Displays , 2024 , 39 ( 1 ): 40 - 47 . (in Chinese) . doi: 10.37188/CJLCD.2023-0349 http://dx.doi.org/10.37188/CJLCD.2023-0349
WANG X L , LIANG L Y , ZHANG H B , et al . Huge mobility enhancement of InSnZnO thin-film transistors via Al-induced microstructure regularization [J]. Applied Physics Letters , 2021 , 119 ( 21 ): 212102 . doi: 10.1063/5.0072077 http://dx.doi.org/10.1063/5.0072077
ZHA W , FANG S H , GAO X F , et al . Tin doping enhanced carrier mobility and stability in amorphous IGZTO thin film transistors [J]. Journal of Electronic Materials , 2025 , 54 ( 9 ): 7702 - 7708 . doi: 10.1007/s11664-025-12091-3 http://dx.doi.org/10.1007/s11664-025-12091-3
CHO S I , KO J B , LEE S H , et al . Remarkably stable high mobility self-aligned oxide TFT by investigating the effect of oxygen plasma time during PEALD of SiO 2 gate insulator [J]. Journal of Alloys and Compounds , 2022 , 893 : 162308 . doi: 10.1016/j.jallcom.2021.162308 http://dx.doi.org/10.1016/j.jallcom.2021.162308
KIM S H , KIM Y S , HWANG T , et al . Reliability improvement of high mobility oxide TFTs based on hydrogen-resistant PEALD Al 2 O 3 gate insulators grown with N 2 O plasma [J]. ACS Applied Materials & Interfaces , 2025 , 17 ( 9 ): 14168 - 14178 . doi: 10.1021/acsami.4c18561 http://dx.doi.org/10.1021/acsami.4c18561
WANG X L , CHENG Y T , WU H F , et al . Microstructure control over low-indium oxide semiconductors to obtain synchronous optimization of their TFT mobility and stability [J]. Small , 2026 , 22 ( 11 ): e11840 . doi: 10.1002/smll.202511840 http://dx.doi.org/10.1002/smll.202511840
CHEN Z P , FU Z X , JIN T T , et al . High-crystallinity and enhanced mobility in In 2 O 3 thin-film transistors via metal-induced method [J]. Applied Physics Letters , 2025 , 126 ( 3 ): 033504 . doi: 10.1063/5.0240919 http://dx.doi.org/10.1063/5.0240919
KUMARESAN Y , LEE R , LIM N , et al . Extremely flexible indium-gallium-zinc oxide (IGZO) based electronic devices placed on an ultrathin poly(methyl methacrylate) (PMMA) substrate [J]. Advanced Electronic Materials , 2018 , 4 ( 7 ): 1800167 . doi: 10.1002/aelm.201800167 http://dx.doi.org/10.1002/aelm.201800167
JEONG H S , PARK M J , KWON S H , et al . Highly sensitive and selective room-temperature NO 2 gas-sensing characteristics of SnO X -based p-type thin-film transistor [J]. Sensors and Actuators B: Chemical , 2019 , 288 : 625 - 633 . doi: 10.1016/j.snb.2019.03.046 http://dx.doi.org/10.1016/j.snb.2019.03.046
VIJJAPU M T , SURYA S , ZALTE M , et al . Towards a low cost fully integrated IGZO TFT NO 2 detection and quantification: a solution-processed approach [J]. Sensors and Actuators B: Chemical , 2021 , 331 : 129450 . doi: 10.1016/j.snb.2021.129450 http://dx.doi.org/10.1016/j.snb.2021.129450
YEOM G , KWON D , SHIN W , et al . Fast-response/recovery In 2 O 3 thin-film transistor-type NO 2 gas sensor with floating-gate at low temperature [J]. Sensors and Actuators B: Chemical , 2023 , 394 : 134477 . doi: 10.1016/j.snb.2023.134477 http://dx.doi.org/10.1016/j.snb.2023.134477
VIJJAPU M T , SURYA S G , YUVARAJA S , et al . Fully integrated indium gallium zinc oxide NO 2 gas detector [J]. ACS Sensors , 2020 , 5 ( 4 ): 984 - 993 . doi: 10.1021/acssensors.9b02318 http://dx.doi.org/10.1021/acssensors.9b02318
YANG X Y , CAIRANG L , YIN Y , et al . Mechanistic insight into unusual humidity resistance enhancement in metal oxide semiconductor hydrogen sensors via crystalline ceria decoration [J]. Sensors and Actuators B: Chemical , 2026 , 447 : 138781 . doi: 10.1016/j.snb.2025.138781 http://dx.doi.org/10.1016/j.snb.2025.138781
WITKOWSKI F , SZYMANIEC M , BRAŃKO F , et al . Fabrication and optimization of chemically processed Zn-Sn-O TFTs with ITO electrodes for pH sensing [J]. Journal of Electronic Materials , 2026 , 55 ( 1 ): 197 - 208 . doi: 10.1007/s11664-025-12424-2 http://dx.doi.org/10.1007/s11664-025-12424-2
KIM Y G , TAK Y J , KIM H J , et al . Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors [J]. Scientific Reports , 2018 , 8 ( 1 ): 5546 . doi: 10.1038/s41598-018-23892-4 http://dx.doi.org/10.1038/s41598-018-23892-4
LIANG L Y , ZHANG S N , WU W H , et al . Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage [J]. Applied Physics Letters , 2016 , 109 ( 17 ): 173501 .
CHEN L P , CUI J B , SHENG X , et al . High-performance photoelectronic sensor using mesostructured ZnO nanowires [J]. ACS Sensors , 2017 , 2 ( 11 ): 1567 - 1572 . doi: 10.1021/acssensors.7b00477 http://dx.doi.org/10.1021/acssensors.7b00477
PEI Y , LIANG L Y , WANG X L , et al . Low-temperature-crystallized Ga 2 O 3 thin films and their TFT-type solar-blind photodetectors [J]. The Journal of Physical Chemistry Letters , 2022 , 13 ( 31 ): 7243 - 7251 . doi: 10.1021/acs.jpclett.2c01852 http://dx.doi.org/10.1021/acs.jpclett.2c01852
CHOI H T , KANG J H , AHN J , et al . Zero-dimensional PbS quantum dot-InGaZnO film heterostructure for short-wave Infrared flat-panel imager [J]. ACS Photonics , 2020 , 7 ( 8 ): 1932 - 1941 . doi: 10.1021/acsphotonics.0c00594 http://dx.doi.org/10.1021/acsphotonics.0c00594
HAN Y , SEO J , LEE D H , et al . IGZO-based electronic device application: advancements in gas sensor, logic circuit, biosensor, neuromorphic device, and photodetector technologies [J]. Micromachines , 2025 , 16 ( 2 ): 118 . doi: 10.3390/mi16020118 http://dx.doi.org/10.3390/mi16020118
LIAO F X , ZHU Z Y , LI Z H , et al . High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs [J]. Nature Communications , 2025 , 16 ( 1 ): 10932 . doi: 10.1038/s41467-025-65925-3 http://dx.doi.org/10.1038/s41467-025-65925-3
LEE J M , LEE S Y , BYUN S J , et al . A vertically stackable split-gate amorphous oxide semiconductor 2T0C DRAM for reducing capacitive coupling and sneak-path current [J]. Advanced Materials Technologies , 2026 , 11 ( 7 ): e02404 . doi: 10.1002/admt.202502404 http://dx.doi.org/10.1002/admt.202502404
GUO L Q , HAN H , ZHU L Q , et al . Oxide neuromorphic transistors gated by polyvinyl alcohol solid electrolytes with ultralow power consumption [J]. ACS Applied Materials & Interfaces , 2019 , 11 ( 31 ): 28352 - 28358 . doi: 10.1021/acsami.9b05717 http://dx.doi.org/10.1021/acsami.9b05717
DUAN H X , LIANG L Y , WU Z D , et al . IGZO/CsPbBr 3 -nanoparticles/IGZO neuromorphic phototransistors and their optoelectronic coupling applications [J]. ACS Applied Materials & Interfaces , 2021 , 13 ( 25 ): 30165 - 30173 .
YANG W H , KAN H , SHEN G Z , et al . A network intrusion detection system with broadband WO 3- x /WO 3- x -Ag/WO 3- x optoelectronic memristor [J]. Advanced Functional Materials , 2024 , 34 ( 23 ): 2312885 . doi: 10.1002/adfm.202470127 http://dx.doi.org/10.1002/adfm.202470127
SA Z X , SONG K P , MENG Y , et al . Induced fit growth of Ga-based semiconductor thin films for brain-inspired electronics and optoelectronics [J]. Light: Science & Applications , 2026 , 15 ( 1 ): 103 .
GAO Z X , JU X , ZHANG H Z , et al . InP quantum dots tailored oxide thin film phototransistor for bioinspired visual adaptation [J]. Advanced Functional Materials , 2023 , 33 ( 52 ): 2305959 . doi: 10.1002/adfm.202305959 http://dx.doi.org/10.1002/adfm.202305959
PARK S , JEON G , SEONG S , et al . 2T neuromorphic device based on oxide semiconductor with high linearity and symmetry for high-precision training [C]. 2022 19th International SoC Design Conference (ISOCC). Gangneung-si : IEEE , 2022 : 151 - 152 . doi: 10.1109/isocc56007.2022.10031489 http://dx.doi.org/10.1109/isocc56007.2022.10031489
YANG P , XU H , LUO X P , et al . Tailoring dynamic synaptic plasticity in FeTFT optoelectronic synapse for associative learning [J]. Advanced Electronic Materials , 2025 , 11 ( 7 ): 2400732 . doi: 10.1002/aelm.202400732 http://dx.doi.org/10.1002/aelm.202400732
LIANG K , WANG R , REN H H , et al . Printable coffee-ring structures for highly uniform all-oxide optoelectronic synaptic transistors [J]. Advanced Optical Materials , 2022 , 10 ( 24 ): 2201754 . doi: 10.1002/adom.202201754 http://dx.doi.org/10.1002/adom.202201754
PARK J , YUN Y M , BAE S , et al . High-performance synapse arrays for neuromorphic computing via floating gate‐engineered IGZO synaptic transistors [J]. Advanced Science , 2025 , 12 ( 21 ): 2500568 . doi: 10.1002/advs.202570158 http://dx.doi.org/10.1002/advs.202570158
0
Views
351
下载量
0
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution
京公网安备11010802024621