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Mechanism analysis and suppression measures for gate data short defects in oxide TFT
Device Physics and Device Preparation | 更新时间：2025-04-09

    • Mechanism analysis and suppression measures for gate data short defects in oxide TFT

    • “In the field of oxide TFT, researchers have clarified the DGS defect principle, identified influencing factors, and proposed solutions, effectively improving product quality.”
    • Chinese Journal of Liquid Crystals and Displays   Vol. 40, Issue 4, Pages: 566-576(2025)

    • DOI：10.37188/CJLCD.2024-0338    

      CLC： TN321+.5
    • CSTR：32172.14.CJLCD.2024-0338    

    • Received：01 December 2024，

      Revised：28 January 2025，

      Published：05 April 2025

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  • LIU Dan, FAN Xiaojun, CEHN Wei, et al. Mechanism analysis and suppression measures for gate data short defects in oxide TFT[J]. Chinese journal of liquid crystals and displays, 2025, 40(4): 566-576. DOI： 10.37188/CJLCD.2024-0338. CSTR： 32172.14.CJLCD.2024-0338.

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Related Author

LIU Dan
FAN Xiaojun
CHEN Wei
LIU Wei
LIU Chuan
DU Hongwei
YANG Sheng
WU Xu

Related Institution

BOE Technology Group Co Ltd.
School of Electronics and Information Technology， Sun Yat-sen University， Guang dong Guangzhou
Chongqing BOE Optoelectronics Technology Co.， Ltd
Department of Electronic Engineering， Shanghai Jiao Tong University
Beijing BOE Display Technology Co.， Ltd.
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