PFI incorporation into PEDOT∶PSS hole injection layer for improving performance of Cu-In-Zn-S-based quantum dot light-emitting diodes

LIU Binghan; ZHAO Jinxing; LIU Ziyi; XIE Xiulin; ZHENG Longxue; WU Jingke; CAI Wenche; LI Xu; TANG Aiwei

doi:10.37188/CJLCD.2025-0219

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PFI incorporation into PEDOT∶PSS hole injection layer for improving performance of Cu-In-Zn-S-based quantum dot light-emitting diodes

Quantum Dot Luminescent Devices | 更新时间：2026-09-12

- PFI incorporation into PEDOT∶PSS hole injection layer for improving performance of Cu-In-Zn-S-based quantum dot light-emitting diodes
- Chinese Journal of Liquid Crystals and Displays Vol. 41, Issue 1, Pages: 142-149(2026)
- 作者机构：
  
  1.河北大学物理科学与技术学院，河北保定 071002
  2.北京交通大学物理科学与工程学院，北京 100044
- 作者简介：
- 基金信息：
  
  Scientific and Technological Research Projects for Colleges and Universities in Hebei Province(CXY2024019)
- DOI：10.37188/CJLCD.2025-0219
  CLC： TN383⁺.1
- CSTR：32172.14.CJLCD.2025-0219
- Received：31 October 2025，
  
  Revised：2025-11-27，
  
  Published：05 January 2026
- 稿件说明：
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LIU Binghan, ZHAO Jinxing, LIU Ziyi, et al. PFI incorporation into PEDOT∶PSS hole injection layer for improving performance of Cu-In-Zn-S-based quantum dot light-emitting diodes[J]. Chinese Journal of Liquid Crystals and Displays, 2026, 41(1): 142-149.
DOI：

LIU Binghan, ZHAO Jinxing, LIU Ziyi, et al. PFI incorporation into PEDOT∶PSS hole injection layer for improving performance of Cu-In-Zn-S-based quantum dot light-emitting diodes[J]. Chinese Journal of Liquid Crystals and Displays, 2026, 41(1): 142-149. DOI： 10.37188/CJLCD.2025-0219. CSTR： 32172.14.CJLCD.2025-0219.

摘要

多元铜基硫族量子点发光二极管（QLEDs）中空穴注入过慢造成的电子-空穴注入不平衡是限制器件性能提升的主要原因之一。本研究设计了一种全氟化树脂（PFI）改性聚（3，4-乙烯二氧噻吩）-聚（苯乙烯磺酸盐）（PEDOT∶PSS）的策略，借助PFI的自组装特性构建出具有梯度能级的空穴注入层PFI-PEDOT∶PSS。单空穴传输器件进一步证明，PFI-PEDOT∶PSS空穴注入层可有效降低器件空穴注入势垒并提高空穴注入效率，从而使器件性能得到提升。最终采用PFI-PEDOT∶PSS作为空穴注入层、Cu-In-Zn-S量子点作为发光层制备的电致发光器件的峰值外量子效率达到4.7%，是PEDOT∶PSS基器件的2.2倍。结果表明，这种将PFI引入PEDOT∶PSS空穴注入层的修饰策略可以有效提升Cu-In-Zn-S基QLEDs器件性能，也为后续环境友好型QLEDs产业化应用奠定了重要研究基础。

Abstract

Electron-hole injection imbalance caused by slow hole injection is one of the major factors limiting the performance improvement of multinary copper chalcogenide quantum dot light-emitting diodes（QLEDs）. This study designed a strategy to modify poly（3，4-ethylenedioxythiophene）-poly（styrenesulfonate）（PEDOT∶PSS） using a nafion perfluorinated resin（PFI）. Taking advantage of the self-assembly property of PFI， a hole injection layer （PFI-PEDOT∶PSS） with a gradient energy level was constructed. Single hole-transporting devices further demonstrate that the PFI-PEDOT∶PSS hole injection layer can effectively reduce the hole injection barrier and enhance hole injection efficiency， thereby improving device performance. Finally， the peak external quantum efficiency of the electroluminescent devices fabricated with PFI-PEDOT∶PSS as the hole injection layer and Cu-In-Zn-S quantum dots as the emitting layer reached 4.7%， which was 2.2 times that of the PEDOT∶PSS-based devices. The results indicate that this modification strategy of incorporating PFI into the PEDOT∶PSS hole injection layer can effectively enhance the performance of Cu-In-Zn-S-based QLEDs， and also lays an important research foundation for the subsequent industrial application of environmentally friendly QLEDs.

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