a-Si剩余膜厚对TFT特性的影响

田茂坤; 黄中浩; 谌伟; 王恺; 王思江; 王瑞; 董晓楠; 赵永亮; 闵泰烨; 袁剑峰; 孙耒来

doi:10.3788/YJYXS20193407.0646

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a-Si剩余膜厚对TFT特性的影响

材料与器件 | 更新时间：2020-07-05

- a-Si剩余膜厚对TFT特性的影响
- Effect of thickness of a-Si remain on TFT characteristics
- 液晶与显示 2019年34卷第7期页码：646-651
- 作者机构：
  
  重庆京东方光电科技有限公司, 重庆 400700
- 作者简介：
  
  [ "田茂坤(1986-), 男, 重庆黔江人, 学士, 2012年与哈尔滨理工大学获得学士学位, 主要从事TFT工艺技术的研究。E-mail:tianmaokun@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20193407.0646
  中图分类号： TN27
- 收稿日期：2018-12-25，
  
  录用日期：2019-4-25，
  
  纸质出版日期：2019-07-05
- 稿件说明：
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田茂坤, 黄中浩, 谌伟, 等. a-Si剩余膜厚对TFT特性的影响[J]. 液晶与显示, 2019,34(7):646-651.

Mao-kun TIAN, Zhong-hao HUANG, Wei CHEN, et al. Effect of thickness of a-Si remain on TFT characteristics[J]. Chinese journal of liquid crystals and displays, 2019, 34(7): 646-651.
田茂坤, 黄中浩, 谌伟, 等. a-Si剩余膜厚对TFT特性的影响[J]. 液晶与显示, 2019,34(7):646-651. DOI： 10.3788/YJYXS20193407.0646.

Mao-kun TIAN, Zhong-hao HUANG, Wei CHEN, et al. Effect of thickness of a-Si remain on TFT characteristics[J]. Chinese journal of liquid crystals and displays, 2019, 34(7): 646-651. DOI： 10.3788/YJYXS20193407.0646.

摘要

本文通过电学特性测试设备在黑暗（Dark）和光照（Photo）两种测试环境下，研究了沟道不同a-Si剩余厚度对TFT电学特性的影响。通过调整刻蚀时间改变沟道内a-Si剩余厚度，找出电学特性稳定区域以及突变的临界点。实验结果表明：在黑暗（Dark）环境下a-Si剩余厚度在30%~48%之间时，TFT器件的电学特性比较稳定，波动较小；而剩余厚度少于30%时，TFT特性变差，工作电流变小，开启电压变大，电子迁移率变小；在光照环境下主要考虑漏电流的影响，在a-Si剩余厚度43%以内时，光照

off

相对较低（小于Spec 20 pA），同时变化趋势较缓；而剩余厚度大于43%时，光照

off

增加25%，同时变化趋势陡峭。综合黑暗和光照测试环境，在其他条件不变的情况下，a-Si剩余厚度在30%~43%之间时TFT的电学特性较好，同时相对稳定。

Abstract

The effects of different a-Si remain thickness of channel on the electrical properties of TFT were studied under dark and photo test environments. The thickness of a-Si remain in channel was changed by adjusting the etching time. Futhermore

the stable region and the critical point of radical change of electrical were found through this experiment. The experimental results show that the electrical characteristics of TFT devices are relatively stable and fluctuate slightly when the thickness of a-Si remain is between 30% and 48% in dark environment. When the remaining thickness is less than 30%

the TFT characteristics become worse

becomes smaller

becomes larger

and the mobility decreases consequently. Unlike dark condition

off

is the chief consideration under photo circumstance. When the thickness of a-Si remain is less than 43%

photo

off

is relatively low (less than spec 20 pA)

and the trend of change is relatively slow. But when the residual thickness is more than 43%

photo

off

increases by 25%

and the trend of change is steep. In conclusion

when the thickness of a-Si remain is between 30% and 43%

the electrical characteristics of TFT are better and relatively stable regardless of test conditions.

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Keywords

references

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