氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究

万云海; 邹志翔; 林亮; 杨成绍; 黄寅虎; 王章涛

doi:10.3788/YJYXS20193401.0007

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氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究

材料与器件 | 更新时间：2020-07-05

- 氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究
- Etch-stop layer plasma chemical enhanced vapor deposition for oxide thin-film-transistor
- 液晶与显示 2019年34卷第1期页码：7-13
- 作者机构：
  
  京东方科技集团股份有限公司合肥鑫晟工厂, 合肥 230012
- 作者简介：
  
  [ "万云海(1988-), 男, 安徽芜湖人, 工程师, 2014年于南京理工大学获得硕士学位, 主要从事TFT工艺开发的研究工作。E-mail:wanyunhai@boe.com.cn" ]
  [ "杨成绍(1984-), 男, 安徽合肥人, 工程师, 2009年于中科院近代物理研究所获得硕士学位, 主要从事TFT工艺开发。E-mail:yangchengshao@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20193401.0007
  中图分类号： TN141.9
- 收稿日期：2018-07-17，
  
  录用日期：2018-10-18，
  
  纸质出版日期：2019-01-25
- 稿件说明：
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万云海, 邹志翔, 林亮, 等. 氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究[J]. 液晶与显示, 2019,34(1):7-13.

Yun-hai WAN, Zhi-xiang ZOU, Liang LIN, et al. Etch-stop layer plasma chemical enhanced vapor deposition for oxide thin-film-transistor[J]. Chinese journal of liquid crystals and displays, 2019, 34(1): 7-13.
万云海, 邹志翔, 林亮, 等. 氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究[J]. 液晶与显示, 2019,34(1):7-13. DOI： 10.3788/YJYXS20193401.0007.

Yun-hai WAN, Zhi-xiang ZOU, Liang LIN, et al. Etch-stop layer plasma chemical enhanced vapor deposition for oxide thin-film-transistor[J]. Chinese journal of liquid crystals and displays, 2019, 34(1): 7-13. DOI： 10.3788/YJYXS20193401.0007.

摘要

为实现氧化物TFT（Indium Gallium Zinc Oxide Thin Film Transistor，IGZO TFT）特性的最优化，采用

数据和SEM（Scanning Electron Microscope）图片研究蚀阻挡层（Etch-Stop Layer，ESL）沉积条件与氧化物TFT特性的关系。通过调整沉积温度、正负极板间距、压力和功率，分析了PECVD沉积ESL SiO

的成膜规律，并对所得到的TFT进行了特性分析。发现ESL膜层致密性过差时，后期高温工艺会造成水汽进入IGZO半导体膜层，从而引起TFT特性恶化。而采用高温、高压力等方法取得高致密性的ESL膜层由于高强度等离子体对IGZO本体的还原反应也会致使TFT特性劣化。结果表明，在保证膜层致密性前提下，等离子体对IGZO本体伤害最小的ESL沉积条件才是最优化的ESL沉积条件。

Abstract

In order to optimize the oxide semiconductor TFT character

and SEM data is used to study the dependence of oxide semiconductor TFT character on ESL deposition. The rule of ESL silicon oxide deposition was studied by tuning the temperature

spacing

pressure and power of the deposition. Moreover

the TFT characteristic was also used to analysis ESL silicon oxide deposition. It is found that the TFT will be degraded when the ESL film is loose with multihole structure. The degradation must be attributed to the damage of IGZO semiconductor by the invasion of the vapor caused by later high temperature process. However

the TFT is also bad when the ESL film is dense manufacturing by high temperature or high pressure of deposition because of the reduction reaction between IGZO semiconductor and the enhanced plasma. The most optimization process will be obtained by dense ESL film while the disposition should be minimum damage to IGZO semiconductor.

关键词

Keywords

references

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