TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善

李森; 尚建兴; 张大伟; 田露; 张鹏曲; 肖红玺; 郝金刚; 黄东升; 王威; 张学智

doi:10.3788/YJYXS20173211.0847

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TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善

材料科学 | 更新时间：2020-08-12

- TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善
- Analysis and improvement of Mo-Al-Mo film corrosion in TDDI products
- 液晶与显示 2017年32卷第11期页码：847-852
- 作者机构：
  
  北京京东方光电科技有限公司, 北京 100176
- 作者简介：
  
  [ "李森(1990-), 男, 山东滨州人, 硕士研究生, 工程师, 2016年于北京科技大学腐蚀防护中心, 获得硕士学位, 主要从事TFTArray制程工艺改善及不良分析工作。E-mail:lisen@boe.com.cn" ]
  [ "尚建兴(1989-), 男, 河北唐山人, 工程师, 2015年于北京科技大学材料学院, 获得硕士学位, 主要从事TFTArray制程工艺改善及不良分析工作。E-mail:shanjianxing@boe.com.cn" ]
- 基金信息：
  
  京东方TFT良率提升基金;TFT Yield Increase Funds of BOE
- DOI：10.3788/YJYXS20173211.0847
  中图分类号： TP394.1;TH691.9
- 收稿日期：2017-05-14，
  
  录用日期：2017-7-11，
  
  纸质出版日期：2017-11-05
- 稿件说明：
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李森, 尚建兴, 张大伟, 等. TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善[J]. 液晶与显示, 2017,32(11):847-852.

Sen LI, Jian-xing SHANG, Da-wei ZHANG, et al. Analysis and improvement of Mo-Al-Mo film corrosion in TDDI products[J]. Chinese journal of liquid crystals and displays, 2017, 32(11): 847-852.
李森, 尚建兴, 张大伟, 等. TDDI产品Mo-Al-Mo膜层腐蚀原因分析及改善[J]. 液晶与显示, 2017,32(11):847-852. DOI： 10.3788/YJYXS20173211.0847.

Sen LI, Jian-xing SHANG, Da-wei ZHANG, et al. Analysis and improvement of Mo-Al-Mo film corrosion in TDDI products[J]. Chinese journal of liquid crystals and displays, 2017, 32(11): 847-852. DOI： 10.3788/YJYXS20173211.0847.

摘要

为降低TDDI产品Lead Open型线不良发生率，本文对Lead Open的发生机理进行了研究及改善验证。对TDDI产品生产数据进行了对比，对Mo-Al-Mo结构的SD膜层进行研究，根据以上结果确定改善方案并投入验证。首先，明确了Lead Open发生率与Delay Time的关系。接着，对SD膜层的微观结构进行了表征。然后，根据膜层结构和不同金属的电化学特征，建立了SD膜层电偶腐蚀模型。分析表明：Mo、Al两种金属间存在1.47 V的电极电位差，具有很强的电偶腐蚀倾向性，且表层Mo中存在10 nm级别的贯穿性孔洞，直径为0.4 nm的水分子可轻易渗入，进而引发电偶腐蚀。表层Mo厚度增加25%后，其腐蚀速度较量产条件降低30%，Lead Open发生率降低1.4个百分点，维持在0.1%的较低水平，满足TDDI产品量产对该类不良发生率的要求。

Abstract

In order to reduce the incidence rate of Lead Open-type line defects in the TDDI products

the mechanism of the Lead Open was studied and validated. Meanwhile

the improved solution for the defects was determined and put verification based on the results coming from the TDDI production data comparison and the investigation on SD film of the Mo-Al-Mo structure. Three parts of the whole research process were contained. The relationship between the Lead Open incidence and Delay Time was firstly determined

and then the microstructure of SD film was characterized. Finally

according to the electrochemical property and film structure of different metals

a galvanic corrosion model of SD film was also established. The results show that a potential difference (PD) of 1.47 V exists between Mo and Al

and the PD has a strong galvanic tendency. In addition

some penetrating holes with the size of~10 nm are found in the Top Mo

which can be easily infiltrated by water with the size of~0.4 nm and thus leading to the galvanic corrosion. Nevertheless

compared to the existing production conditions

the corrosion rate can decrease by~30% when adding~25% Top Mo. More importantly

the incidence rate of Lead Open is found decrease by 1.4% and maintain the low level of 0.1% at this time

which meets the requirement for the defect incidence rate of the TDDI products.

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Keywords

references

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