溶液法氧化物薄膜晶体管的印刷制备

钟云肖; 谢宇; 周尚雄; 袁炜健; 史沐杨; 姚日晖; 宁洪龙; 徐苗; 王磊; 兰林锋; 彭俊彪

doi:10.3788/YJYXS20173206.0443

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溶液法氧化物薄膜晶体管的印刷制备

器件技术 | 更新时间：2020-07-07

- 溶液法氧化物薄膜晶体管的印刷制备
- Oxide semiconductor thin film transistor device print fabrication based on solution method
- 液晶与显示 2017年32卷第6期页码：443-454
- 作者机构：
  
  华南理工大学高分子光电材料与器件研究所发光材料与器件国家重点实验室材料科学与工程学院, 广东广州 510640
- 作者简介：
  
  [ "钟云肖(1995-), 男, 广西北海人, 主要从事光电材料与器件方面的研究。E-mail:2544947313@qq.com" ]
  [ "宁洪龙(1971-), 男, 湖南株洲人, 博士, 研究员, 主要从事光电材料与器件方面的研究。E-mail:ninghl@scut.edu.cn" ]
- 基金信息：
  
  NSFC(U1601651);Fundamental Research Funds for the Central Universities(2015ZZ063);Fundamental Research Funds for the Central Universities(2015ZP024);Science and Technology Project of Guangdong Province(2016B090906002);Science and Technology Project of Guangdong Province(2016B090907001);Science and Technology Project of Guangdong Province(2016A040403037);Science and Technology Project of Guangdong Province(2015B090914003);Science and Technology Project of Guangdong Province(2014B090915004);Guangdong Natural Science Foundation(2016A030313459);Founded by MOST, National Key R & D Program of China(2016YFF0203603);Founded by MOST, National Key R & D Program of China(2016YFB0401504);National Key Basic Research and Development Program of China(2015CB655004);国家自然科学基金重大集成项目(U1601651);中央高校基本科研业务费专项资金(2015ZZ063);中央高校基本科研业务费专项资金(2015ZP024);广东省科技计划项目(2016B090906002);广东省科技计划项目(2016B090907001);广东省科技计划项目(2016A040403037);广东省科技计划项目(2015B090914003);广东省科技计划项目(2014B090915004);广东省自然科学基金资助项目(2016A030313459);国家重点研发计划专项项目(2016YFF0203603);国家重点研发计划专项项目(2016YFB0401504);国家重点基础研究发展规划项目计划(2015CB655004)
- DOI：10.3788/YJYXS20173206.0443
  中图分类号： TN321.5
- 收稿日期：2016-12-12，
  
  录用日期：2017-2-13，
  
  纸质出版日期：2017-06-05
- 稿件说明：
移动端阅览
钟云肖, 谢宇, 周尚雄, 等. 溶液法氧化物薄膜晶体管的印刷制备[J]. 液晶与显示, 2017,32(6):443-454.

Yun-xiao ZHONG, Yu XIE, Shang-xiong ZHOU, et al. Oxide semiconductor thin film transistor device print fabrication based on solution method[J]. Chinese journal of liquid crystals and displays, 2017, 32(6): 443-454.
钟云肖, 谢宇, 周尚雄, 等. 溶液法氧化物薄膜晶体管的印刷制备[J]. 液晶与显示, 2017,32(6):443-454. DOI： 10.3788/YJYXS20173206.0443.

Yun-xiao ZHONG, Yu XIE, Shang-xiong ZHOU, et al. Oxide semiconductor thin film transistor device print fabrication based on solution method[J]. Chinese journal of liquid crystals and displays, 2017, 32(6): 443-454. DOI： 10.3788/YJYXS20173206.0443.

摘要

溶液法印刷制备电子器件因具有绿色环保、低成本、流程简单、柔性好和适应性强等优良特性，受到世界各个国家的重视，尤其高性能薄膜晶体管是平板显示和消费电子行业的基石，更成为了研究的热点。本文综述了基于溶液法氧化物薄膜晶体管印刷制备的最新研究进展，详细讨论了印刷氧化物薄膜晶体管结构优化、半导体层材料、电极层材料和绝缘层材料以及相关前驱体选择等，指出了提升器件性能的关键，明确了器件后处理与稳定性的关系。最后，本文总结了氧化物薄膜晶体管在印刷制备和应用过程中存在的问题以及发展前景。

Abstract

In recent years

solution method for electronic device print fabrication has garnered increasing interest and attention due to their green

low-cost

simple process

flexible and good adaptive

particularly in high-performance oxide semiconductor thin film transistor in flat panel display and consumer electronics industries. This review reported latest progresses of print oxide semiconductor TFT including structure optimization

semiconductor layer material

electrode layer material

insulating layer material and associated precursor selection. The relationship between device stability and post-treatment is described clearly

and the key of performance promotion is found. Moreover

several personal insights on the existing challenges and future research direction of print oxide semiconductor TFT are considered based on current advances.

关键词

Keywords

references

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