高性能钆铝锌氧薄膜晶体管的制备

董俊辰; 郁文; 李慧津; 韩德栋; 张盛东; 张兴; 王漪

doi:10.3788/YJYXS20173205.0339

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高性能钆铝锌氧薄膜晶体管的制备

材料与器件 | 更新时间：2020-07-07

- 高性能钆铝锌氧薄膜晶体管的制备
- Fabrication of high performance Gadolinium-aluminum-zinc-oxide thin film transistors
- 液晶与显示 2017年32卷第5期页码：339-343
- 作者机构：
  
  1.北京大学微电子学研究院, 北京 100871
  2.北京大学深圳研究生院, 广东深圳 518055
- 作者简介：
  
  韩德栋, E-mail:hangdedong@pku.edu.cn
  王漪, E-mail:wangyi@ime.pku.edu.cn
- 基金信息：
  
  国家自然科学基金(61275025);National Natural Science Foundation of China(61275025)
- DOI：10.3788/YJYXS20173205.0339
  中图分类号： TN405
- 收稿日期：2016-09-29，
  
  录用日期：2016-10-20，
  
  纸质出版日期：2017-05
- 稿件说明：
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董俊辰, 郁文, 李慧津, 等. 高性能钆铝锌氧薄膜晶体管的制备[J]. 液晶与显示, 2017,32(5):339-343.

Jun-chen DONG, Wen YU, Hui-jin LI, et al. Fabrication of high performance Gadolinium-aluminum-zinc-oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 339-343.
董俊辰, 郁文, 李慧津, 等. 高性能钆铝锌氧薄膜晶体管的制备[J]. 液晶与显示, 2017,32(5):339-343. DOI： 10.3788/YJYXS20173205.0339.

Jun-chen DONG, Wen YU, Hui-jin LI, et al. Fabrication of high performance Gadolinium-aluminum-zinc-oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 339-343. DOI： 10.3788/YJYXS20173205.0339.

摘要

本文研究并制备了钆铝锌氧薄膜和以钆铝锌氧为有源层的薄膜晶体管。钆铝锌氧薄膜材料的光致发光光谱和透过率说明钆铝锌氧薄膜在透明显示方向的应用潜力。透射电子显微镜揭示了钆铝锌氧薄膜的非晶态微观结构。钆铝锌氧薄膜晶体管显示了良好的转移特性和输出特性。器件开关比大于10

、饱和迁移率约为10 cm

·V

-1

·s

-1

。实验结果表明，钆铝锌氧薄膜可用作氧化物薄膜晶体管的有源层材料；钆铝锌氧薄膜晶体管可作为像素电路的驱动器件。

Abstract

Because of the advantages in high mobility and low temperature process

oxide thin film transistor (TFT) becomes the hotspot in display technology at present. Gadolinium-aluminum-zinc-oxide (GdAZO) thin film and GdAZO TFT (active layer is GdAZO thin film) were fabricated. The photoluminescence spectra and the transmittance of GdAZO thin film demonstrate the application potential in transparent display. The transmission electron microscope image discovers the amorphous microstructure of the GdAZO thin film. The GdAZO TFTs manifests preferable transfer characteristics and output characteristics. The on-to-off current ratio is larger than 10

and the saturation mobility is about 10 cm

·V

-1

·s

-1

. The results imply that the GdAZO is a category of feasible candidate for oxide TFTs

besides

the GdAZO TFTs can serve as the drive devices in pixel circuits.

关键词

Keywords

references

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