薄膜晶体管透明电极铟锡氧化物雾状不良的分析研究

王守坤; 郭总杰; 袁剑峰; 林承武; 邵喜斌

doi:10.3788/YJYXS20142903.0355

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薄膜晶体管透明电极铟锡氧化物雾状不良的分析研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- 薄膜晶体管透明电极铟锡氧化物雾状不良的分析研究
- Analysis and improvement of haze Mura on Indium-Tin-Oxide thin film transistor electrode
- 液晶与显示 2014年29卷第3期页码：355-360
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20142903.0355
  中图分类号：
- 收稿日期：2013-09-09，
  
  修回日期：2013-10-12，
  
  纸质出版日期：2014-04-25
- 稿件说明：
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王守坤, 郭总杰, 袁剑峰, 林承武, 邵喜斌. 薄膜晶体管透明电极铟锡氧化物雾状不良的分析研究[J]. 液晶与显示, 2014,29(3): 355-360

WANG Shou-kun, GUO Zong-jie, YUAN Jian-feng, LIN Cheng-wu, SHAO Xi-bin. Analysis and improvement of haze Mura on Indium-Tin-Oxide thin film transistor electrode[J]. , 2014,29(3): 355-360
王守坤, 郭总杰, 袁剑峰, 林承武, 邵喜斌. 薄膜晶体管透明电极铟锡氧化物雾状不良的分析研究[J]. 液晶与显示, 2014,29(3): 355-360 DOI： 10.3788/YJYXS20142903.0355.

WANG Shou-kun, GUO Zong-jie, YUAN Jian-feng, LIN Cheng-wu, SHAO Xi-bin. Analysis and improvement of haze Mura on Indium-Tin-Oxide thin film transistor electrode[J]. , 2014,29(3): 355-360 DOI： 10.3788/YJYXS20142903.0355.

摘要

对FFS-TFT制作工艺中，与氮化硅膜层接触的透明电极ITO发生的雾状不良进行分析研究。通过扫描电子显微镜、宏观/微观显微镜和背光源测试设备对样品进行分析。结果显示接触层的等离子体界面处理对ITO的透过率和膜质特性有较大影响，可导致严重的雾状不良发生和刻蚀工艺中的膜层下端过度刻蚀的问题。通过在透明电极ITO上面沉积微薄的过渡缓冲膜层，并优化界面等离子体处理条件，可以改善雾状不良。

Abstract

Silicon nitride thin films(SiN

) were deposited on the transparent conductive indium-tin-oxide (ITO)films by plasma enhanced chemical vapor deposition (PECVD)

and was used in fabricating the fringe field switching thin film transistors.The defect of haze mura on the ITO films were studied.The obtained samples were characterized by scanning electron microscopy (SEM)

Macro Scope/Micro Scope inspection system (M/M)and BLU Electro-optical Measure System.The result showed that the SiN

film surface plasma treatment played an important role in ITO transparence and film character

which can cause haze mura and undercut issue about dry etch process. The defect of haze mura can be improved by deposited thinner SiN

buffer layer and optimized surface plasma treatment.

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references

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