搭桥晶粒多晶硅薄膜晶体管

郭海成; 周玮; 陈荣盛; 赵淑云; 张猛; 王文; 陈树明; 周南云

doi:10.3788/YJYXS20132804.0471

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搭桥晶粒多晶硅薄膜晶体管

特邀报告 | 更新时间：2020-08-12

- 搭桥晶粒多晶硅薄膜晶体管
- Bridged-Grain Polycrystalline Silicon Thin-Film Transistors
- 液晶与显示 2013年28卷第4期页码：471-478
- 作者机构：
  
  1. 香港科技大学显示技术研究中心,香港
  2. 广东中显科技有限公司,广东佛山,528225
- 作者简介：
- 基金信息：
  
  香港研究资助局主题研究计划项目(No.T23-713/11-1)()
- DOI：10.3788/YJYXS20132804.0471
  中图分类号： TN321+.5
- 收稿日期：2013-04-15，
  
  修回日期：2013-05-12，
  
  纸质出版日期：2013-08-15
- 稿件说明：
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郭海成, 周玮, 陈荣盛, 赵淑云, 张猛, 王文, 陈树明, 周南云. 搭桥晶粒多晶硅薄膜晶体管[J]. 液晶与显示, 2013,28(4): 471-478

KWOK Hoi-Sing, ZHOU Wei, CHEN Rong-sheng, ZHAO Shu-yun, ZHANG Meng, WONG Man, CHEN Shu-ming, CHOW Thomas. Bridged-Grain Polycrystalline Silicon Thin-Film Transistors[J]. , 2013,28(4): 471-478
郭海成, 周玮, 陈荣盛, 赵淑云, 张猛, 王文, 陈树明, 周南云. 搭桥晶粒多晶硅薄膜晶体管[J]. 液晶与显示, 2013,28(4): 471-478 DOI： 10.3788/YJYXS20132804.0471.

KWOK Hoi-Sing, ZHOU Wei, CHEN Rong-sheng, ZHAO Shu-yun, ZHANG Meng, WONG Man, CHEN Shu-ming, CHOW Thomas. Bridged-Grain Polycrystalline Silicon Thin-Film Transistors[J]. , 2013,28(4): 471-478 DOI： 10.3788/YJYXS20132804.0471.

摘要

提出了一种薄膜晶体管的新结构。这种新结构充分发挥了短沟道效应和多结效应的优点。通过器件模拟

验证了此种器件结构的物理机制。通过应用这种新结构

薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善

并且器件的热载流子和自加热可靠性也得到了极大的改善。

Abstract

A new structure for thin-film transistors is proposed and demonstrated

exhibiting the benefits but not the drawbacks of both short-channel and multi-junction effects. Simulations are performed to verify the physics of this device structure. All characteristics such as threshold voltage

pseudo subthreshold slope

on-off current ratio and field-effect mobility are improved. Furthermore

device hot carrier and self-heating reliability are also improved by this new structure.

关键词

Keywords

references

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