Advances in preparation of high-performance quantum dot light-emitting diodes based on interfacial modification layers
Quantum Dot Luminescent Devices|更新时间:2026-01-26
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Advances in preparation of high-performance quantum dot light-emitting diodes based on interfacial modification layers
“Quantum dot light-emitting diodes (QLEDs), as the next generation of display technology, have made progress in interface modification research, providing new ideas for improving performance and lifespan, and have the potential to reshape the international display panel market landscape.”
Chinese Journal of Liquid Crystals and DisplaysVol. 41, Issue 1, Pages: 120-141(2026)
作者机构:
1.福州大学 物理与信息工程学院, 福建 福州 350108
2.中国福建省光电信息科技创新实验室, 福建 福州 350108
作者简介:
基金信息:
National Natural Science Foundation of China(52572156)
LUO Chengyu, ZHONG Chao, CHEN Jialei, et al. Advances in preparation of high-performance quantum dot light-emitting diodes based on interfacial modification layers[J]. Chinese Journal of Liquid Crystals and Displays, 2026, 41(1): 120-141.
DOI:
LUO Chengyu, ZHONG Chao, CHEN Jialei, et al. Advances in preparation of high-performance quantum dot light-emitting diodes based on interfacial modification layers[J]. Chinese Journal of Liquid Crystals and Displays, 2026, 41(1): 120-141. DOI: 10.37188/CJLCD.2025-0194. CSTR: 32172.14.CJLCD.2025-0194.
Advances in preparation of high-performance quantum dot light-emitting diodes based on interfacial modification layers