基于田口法对无边框液晶模组L0漏光改善研究

唐胜果; 赵曼; 王明明; 赵辉; 钱小丽; 李兰; 李倩; 赵凯旋; 徐海丰; 余丽霞

doi:10.3788/YJYXS20193407.0667

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基于田口法对无边框液晶模组L0漏光改善研究

材料与器件 | 更新时间：2020-07-05

- 基于田口法对无边框液晶模组L0漏光改善研究
- L0 light leakage in borderless module by Taguchi method
- 液晶与显示 2019年34卷第7期页码：667-675
- 作者机构：
  
  合肥鑫晟光电科技有限公司, 安徽合肥 230012
- 作者简介：
  
  [ "唐胜果(1985-), 男, 湖南益阳人, 硕士, BOE资深高级工程师, 2012年于湖南大学获得硕士学位, 主要从事液晶模组不良解析及良率提升方面的工作。E-mail:tangshengguo@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20193407.0667
  中图分类号： TN141.9
- 收稿日期：2019-01-17，
  
  录用日期：2019-4-6，
  
  纸质出版日期：2019-07-05
- 稿件说明：
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唐胜果, 赵曼, 王明明, 等. 基于田口法对无边框液晶模组L0漏光改善研究[J]. 液晶与显示, 2019,34(7):667-675.

Sheng-guo TANG, Man ZHAO, Ming-ming WANG, et al. L0 light leakage in borderless module by Taguchi method[J]. Chinese journal of liquid crystals and displays, 2019, 34(7): 667-675.
唐胜果, 赵曼, 王明明, 等. 基于田口法对无边框液晶模组L0漏光改善研究[J]. 液晶与显示, 2019,34(7):667-675. DOI： 10.3788/YJYXS20193407.0667.

Sheng-guo TANG, Man ZHAO, Ming-ming WANG, et al. L0 light leakage in borderless module by Taguchi method[J]. Chinese journal of liquid crystals and displays, 2019, 34(7): 667-675. DOI： 10.3788/YJYXS20193407.0667.

摘要

为改善无边框液晶模组L0漏光，本文通过对影响面板透过率的液晶材料、PI原材、ODF工艺、PI涂布及其摩擦工艺等诸多因素研究，筛选出预固化温度

时间、PI膜厚、TFT

CT面摩擦强度、TFT

CT摩擦布共7个影响因子；选择面板翘曲度为噪声因子，通过量测不同程度L0漏光对应的面板翘曲，并对L0漏光程度与翘曲进行二次拟合，以此分别选取翘曲为1.8~2.1

m及6.4~8.0

m的面板作为噪声因子高低水平。按L8设计田口实验，采用Jump14运行试验结果，结果显示，预固化温度设置为140℃，预固化时间设置为130 s，PI膜厚设置为75 nm，TFT面摩擦强度设置为14 mm，CF面摩擦强度设置为15.5 mm，其他参数维持量产条件，

S/N

可得到最大值-2.63。该条件下实际平均漏光水平从参数调整前的2.25下降到调整后的1.04。特别地，在漏光高发的翘曲区域，即6.4~8.0

m时，L0漏光均值从3.07下降到1.7，预测漏光程度大于level 3的不良率从6.2%下降到0.2%。

Abstract

In order to decrease incidence ratio of L0 light leakage in borderless module

Seven impact factors(Pre-bake temp.

time

PI thickness

TFT

CF nip

TFT

CT rubbing Cloth)are filtrated by studying LC

ODF

PI coating and rubbing processes. Also

warships of 1.8~2.1

m and 6.4~8.0

m are chosen as noise factor's low

high level based on quadratic fit between L0 leakage level and warship. A L8 Taguchi experiment is designed and run by Jump 14. The result shows that a max

S/N

of~2.63 can be obtained when pre-bake temperature set to 140℃

pre-bake time set to 130 s

PI thickness set to 75 nm

TFT nip set to 14 mm

CF nip set to 15.5 mm and other parameters are the same as MP conditions. And the L0 leakage's average level decreases from 2.25 to 1.04. Particularly

among 6.4~8.0

m warships where is the L0 leakage high-incidence areas

the L0 leakage's average level decrease from 3.07 to 1.04

and its corresponding predicted reject ratio over Level 3 drops from 6.2% to 0.2%.

关键词

Keywords

references

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