王妹.非晶IGZO薄膜晶体管背沟道表面修饰及器件特性研究[D].宁波: 中国科学院宁波材料技术与工程研究所, 2016.

WANG M. Back-channel surface decoration in a-IGZO TFTs and the investigations on the device characteristics[D]. Ningbo: Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, 2016. (in Chinese)

斯蒂芬·A·坎贝尔.微电子制造科学原理与工程技术[M].2版.曾莹, 译.北京: 电子工业出版社, 2003.

CAMPBELL S A. The Science and Engineering of Microelectronic Fabrication [M]. 2nd ed. ZENG B, trans. Beijing: Publishing House of Electronics Industry, 2003. (in Chinese)

杜文涛, 曾志刚, 胡志宇.氧化硅RIE刻蚀工艺研究[J].半导体光电, 2014, 35(1):57-60.

DUW T, ZENG Z G, HU Z Y. Study on Reactive Ion Etching of SiO 2 [J]. Semiconductor Optoelectronics , 2014, 35(1):57-60. (in Chinese)

张锦, 冯伯儒, 杜春雷, 等.反应离子刻蚀工艺因素研究[J].光电工程, 1997, 24(S1):47-52.

ZHANG J, FENG B R, DU C L, et al . Research on the technological factors for the reactive ion etching[J]. Opto-Electronic Engineering , 1997, 24(S1):47-52. (in Chinese)

曲鹏程, 唐代飞, 向鹏飞, 等.氮化硅等离子体刻蚀工艺研究[J].电子科技, 2017, 30(8):153-155.

QU P C, TANG D F, XIANG P F, et al . Study on plasma etching process of silicon nitride[J]. Electronic Science and Technology , 2017, 30(8):153-155. (in Chinese)

胡俊鹏, 张贵生, 周春来.采用CF 4 -H 2 等离子体干法刻蚀SiO 2 [J].微细加工技术, 1985(2):33-36.

HU J P, ZHANG G S, ZHOU C L. Dry etch using CF 4 -H 2 plasma, SiO 2 [J]. Microfabrication Technology , 1985(2):33-36. (in Chinese)