一种可预测TFT-LCD垂直串扰水平的定量分析方法

周焱; 袁剑峰; 吴海龙; 但艺; 毛大龙; 付剑波; 朱海鹏

doi:10.3788/YJYXS20193404.0366

您当前的位置：

首页 >

文章列表页 >

一种可预测TFT-LCD垂直串扰水平的定量分析方法

材料与器件 | 更新时间：2020-07-05

- 一种可预测TFT-LCD垂直串扰水平的定量分析方法
- Aquantitative analysis method for predicting vertical crosstalk level in TFT-LCD
- 液晶与显示 2019年34卷第4期页码：366-378
- 作者机构：
  
  京东方科技集团股份有限公司重庆京东方光电科技有限公司, 重庆 400700
- 作者简介：
  
  [ "周焱(1988-), 男, 湖北黄冈人, 硕士, 高级工程师, 2014年于中国科学院大学获得硕士学位, 主要从事TFT-LCD面板产品评价技术工作。E-mail:zhouyan@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20193404.0366
  中图分类号： TN27
- 收稿日期：2018-09-18，
  
  录用日期：2019-1-15，
  
  纸质出版日期：2019-04
- 稿件说明：
移动端阅览
周焱, 袁剑峰, 吴海龙, 等. 一种可预测TFT-LCD垂直串扰水平的定量分析方法[J]. 液晶与显示, 2019,34(4):366-378.

Yan ZHOU, Jian-feng YUAN, Hai-long WU, et al. Aquantitative analysis method for predicting vertical crosstalk level in TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2019, 34(4): 366-378.
周焱, 袁剑峰, 吴海龙, 等. 一种可预测TFT-LCD垂直串扰水平的定量分析方法[J]. 液晶与显示, 2019,34(4):366-378. DOI： 10.3788/YJYXS20193404.0366.

Yan ZHOU, Jian-feng YUAN, Hai-long WU, et al. Aquantitative analysis method for predicting vertical crosstalk level in TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2019, 34(4): 366-378. DOI： 10.3788/YJYXS20193404.0366.

摘要

电容耦合和TFT漏电引起的垂直串扰问题在高分辨率液晶显示器产品上变得较为突出，大大影响了产品良率。业内通常采用VESA 2.0标准利用窗口画面测试串扰水平，但目前还没有一种预测串扰水平的定量分析方法。本文从垂直串扰形成机理出发，提出了一种可预测垂直串扰水平的定量分析方法，可预测出不同模式产品垂直串扰最严重的画面，有利于我们更好地研究和分析产品的品质。首先，通过分析垂直串扰机理，得到了垂直串扰现象与源电压差之间的定性对应关系。然后，通过分析

曲线，得到窗口画面下的亮度变化与源电压差之间的定量关系|Δ

kα

|Δ

|。通过PCB板上的输出节点可以得到各灰阶对应的正负源电压，依据灰阶画面对应的源电压找到

曲线上对应的点可求出对应的斜率

值，依据漏电机理可求出对应的源电压差值|Δ

|，|Δ

|变化不大时可认为漏电电压降系数

为定值，故可计算出不同灰阶背景画面在窗口画面影响下的亮度变化值|Δ

|，将|Δ

|除以

曲线上对应灰阶的亮度值即可得到串扰值，通过比较不同窗口画面的串扰计算值即可得出串扰最严重的画面。最后，采用VESA 2.0标准方法测试不同窗口画面下的垂直串扰水平，与此方法的计算结果进行比较，串扰变化趋势吻合较好，TN和ADS模式下的线性相关系数分别达0.98和0.93以上。结果表明，此方法可以用来定量地研究产品垂直串扰的问题。

Abstract

The problem of vertical crosstalk caused by capacitive coupling and TFT leakage becomes particularly prominent in high-resolution TFT-LCD products

which greatly affects the yield of products. The industry usually uses VESA 2.0 standard to test crosstalk level by window patterns

but there is still no quantitative analysis method to predict crosstalk level. Based on the formation mechanism of vertical crosstalk. A quantitative analysis method for predicting the vertical crosstalk level was proposed in this paper

which can predict the most serious vertical crosstalk patterns of products with different display modes

and was conducive to better study and analyze the quality of products. Firstly

by analyzing the mechanism of vertical crosstalk

the qualitative correspondence between vertical crosstalk and source voltage difference was obtained. Secondly

by analyzing the

curve

the quantitative relationship between brightness variation|Δ

|under the window pattern and Source voltage difference|Δ

|can be obtained. The positive and negative source voltages corresponding to each gray level can be obtained through the output nodes on the PCB board. The corresponding points on the

curve can be found according to the corresponding source voltages of the gray level patterns and the corresponding slope

values can be obtained. According to the leakage mechanism

the corresponding source voltage difference|Δ

|can be calculated. If the leakage voltage drop coefficient is

there is the formula:|Δ

kα

|Δ

|. The crosstalk value can be obtained by dividing|Δ

|by the brightness value of corresponding gray scale on

curve. The most serious crosstalk pattern can be obtained by comparing the crosstalk calculation values of different window patterns. Finally

compared with the VESA 2.0 standard method to test the vertical crosstalk level under different window patterns

the crosstalk variation trend calculated by this method can be fit well. The linear correlation coefficients in TN and ADS modes are 0.98 and 0.93 respectively. The results show that this method can be used for quantitatively studing the vertical crosstalk of products.

关键词

Keywords

references

马群刚.TFT-LCD原理与设计[M].北京:电子工业出版社, 2011.

MA Q G. The Principle and Design of TFT-LCD [M]. Beijing:Publishing House of Electronics Industry, 2011. (in Chinese)

邵喜斌. TFT-LCD产业与技术进展[J].新材料产业, 2009(1):32-35.

SHAO X B. TFT-LCD industry and technology progress[J]. Advanced Materials Industry, 2009(1):32-35. (in Chinese)

田民波, 叶锋.TFT液晶显示原理与技术[M].北京:科学出版社, 2010:34-37.

TIAN M B, YE F. The Principle and Technology of TFT Liquid Crystal Display [M]. Beijing:Science Press, 2010:34-37. (in Chinese)

肖文俊.薄膜晶体管液晶显示器的串扰研究[D].北京: 北京交通大学, 2014.

XIAO W J. A research on crosstalk in TFT-LCDs[D]. Beijing: Beijing Jiaotong University , 2014. (in Chinese)

邹祥祥.高开口率像素设计与画面品质改善的研究[D].北京: 北京交通大学, 2012.

ZOU X X. The research of the high aperture ratio's the pixel design and the picture quality improvement [D]. Beijing: Beijing Jiaotong University, 2012. (in Chinese)

桑宁波.改善TFT-LCD中串扰的工艺研究[D].上海: 复旦大学, 2011.

SANG N B. Improvement of crosstalk in TFT-LCD progress[D]. Shanghai: Fudan University, 2011. (in Chinese)

HOWARDW E, ALT P M, WISNIEFF R L. Eliminating crosstalk in thin-film transistor/liquid-crystal displays[J]. IEEE Transactions on Electron Devices, 1989, 36(9):1938-1942.

LIBSCH F R, LIEN A. A new driving method for reducing cross-talk in high resolution thin film transistor liquid crystal displays[J]. Japanese Journal of Applied Physics, 1995, 34(12A):6364.

SCHADT M, HELFRICH W. Voltage-dependent optical activity of a twisted nematic liquid crystal[J]. Applied Physics Letters, 1971, 18(4):127-128.

靳鹏飞.液晶电光特性研究[J].应用光学, 2013, 34(1):143-147.

JIN P F. Electro-optic characteristic of liquid crystal[J]. Journey of Applied Optics, 2013, 34(1):143-147. (in Chinese)

孙玉宝, 陈秀引, 张志东, 等.手性沿面排列IPS模式液晶盒中的电光特性[J].液晶与显示, 2003, 18(3):179-182.

SUN Y B, CHEN X Y, ZHANG Z D, et al . Electric-optic effects of the IPS-chiral-planar liquid crystal cell[J]. Chinese Journal of Liquid Crystals and Displays, 2003, 18(3):179-182. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

对称折射率分布的液晶菲涅耳透镜的仿真研究

大尺寸高分辨率TFT-LCD垂直串扰的机理研究与改善

TFT-LCD边缘暗带不良机理研究与改善

TFT-LCD画面闪烁影响因子及定量分析方法

液晶显示器模组黑态均匀性改善研究