网状斑点不良分析研究

白金超; 王勋; 吴祖谋; 丁向前; 张向蒙; 李小龙; 左天宇; 宋勇志; 陈维涛

doi:10.3788/YJYXS20193403.0273

您当前的位置：

首页 >

文章列表页 >

网状斑点不良分析研究

材料与器件 | 更新时间：2020-07-05

- 网状斑点不良分析研究
- Research of Emboss Mura
- 液晶与显示 2019年34卷第3期页码：273-277
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
  
  [ "白金超(1983-), 男, 河南南阳人, 硕士研究生, 2010毕业于南开大学, 主要从事TFT-LCD工艺研究。E-mail:baijinchao@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20193403.0273
  中图分类号： TN141.9
- 收稿日期：2018-09-11，
  
  录用日期：2018-12-24，
  
  纸质出版日期：2019-03
- 稿件说明：
移动端阅览
白金超, 王勋, 吴祖谋, 等. 网状斑点不良分析研究[J]. 液晶与显示, 2019,34(3):273-277.

Jin-chao BAI, Xun WANG, Zu-mou WU, et al. Research of Emboss Mura[J]. Chinese journal of liquid crystals and displays, 2019, 34(3): 273-277.
白金超, 王勋, 吴祖谋, 等. 网状斑点不良分析研究[J]. 液晶与显示, 2019,34(3):273-277. DOI： 10.3788/YJYXS20193403.0273.

Jin-chao BAI, Xun WANG, Zu-mou WU, et al. Research of Emboss Mura[J]. Chinese journal of liquid crystals and displays, 2019, 34(3): 273-277. DOI： 10.3788/YJYXS20193403.0273.

摘要

针对网状斑点（Emboss Mura）不良现象进行系统研究，确定不良发生的机理，并找到有效的改善措施。首先通过半导体参数测试设备和改变电压、频率等方法测试Mura电学特性，然后采用扫描电子显微镜、椭偏仪对栅极绝缘层进行测量，最后采用扫描电子显微镜、X射线电子能谱对玻璃基板背面Mura形貌和成分进行测试，对Mura产生的原因提出合理的解释，并给出有效的改善措施。结果表明，Emboss Mura是干刻反应腔下部电极的阵列凸起划伤玻璃基板背面和凸起碎屑粘附在划伤处形成的。通过更改电极凸起的形状、结构、材质以及下部电极清洁方式、优化电极温度、增加PI膜厚等方式可以极大降低不良的发生率。

Abstract

The Emboss Mura is investigated systematically

the mechanism is found

and the effective measures to improve Emboss Mura are established. Firstly

electrical properties of Mura were tested by means of semiconductor parameter testing equipment and changing voltage and frequency. Then

the gate insulator properties were confirmed by scanning electron microscopy (SEM) and ellipsometer. Finally

Mura morphology and composition on the back of glass substrate were tested by SEM and X-ray photoelectron (EDS)

and a reasonable explanation for the causes of Mura is given

effective improvement measures are put forward. The results show that Emboss Mura is formed by scratching the back of the glass on the bottom electrode emboss and sticking the scratches with the scratch debris. By changing the shape

structure and material of bottom electrode emboss

cleaning bottom electrode

optimizing electrode temperature and increasing PI film thickness

Emboss Mura ratio can be greatly reduced.

关键词

Keywords

references

谷至华.薄膜晶体管(TFT)阵列制造技术[M].上海:复旦大学出版社, 2007.

GU Z H. Thin Film Transistor ( TFT ) Array Manufacturing Technology [M]. Shanghai:Fudan University Press, 2007. (in Chinese)

申智源.TFT-LCD技术:结构、原理及制造技术[M].北京:电子工业出版社, 2012.

SHEN Z Y. TFT - LCD Technology : Structure , Principle and Manufacturing Technology [M]. Beijing:Publishing House of Electronics Industry, 2012. (in Chinese)

胡凯, 陈禹翔, 李青.透明显示技术的进展[J].电子器件, 2012, 35(6):639-646.

HU K, CHEN Y X, LI Q. Development of transparent display technology[J]. Chinese Journal of Electron Devices , 2012, 35(6):639-646. (in Chinese)

张光明, 白金超, 曲泓铭, 等.垂直线不良分析与改善[J].液晶与显示, 2017, 32(5):352-356.

ZHANG G M, BAI J C, QU H M, et al . Analysis and improvement of vertical line mura[J]. Chinese Journal of Liquid Crystals and Displays , 2017, 32(5):352-356. (in Chinese)

毕昕, 丁汉. TFT-LCD Mura缺陷机器视觉检测方法[J].机械工程学报, 2010, 46(12):13-19.

BI X, DING H. Machine vision inspection method of Mura defect for TFT-LCD[J]. Journal of Mechanical Engineering , 2010, 46(12):13-19. (in Chinese)

YOU J, JIA Q, YANG Y F, et al .Improvement of dark state light leakage in ADS mode LCDs[J]. SID Symposium Digest of Technical Papers , 2015, 46(1):1544-1547.

ZHANG W, SONG S H, LI J, et al . Analysis of rubbing Mura in fringe field switching liquid crystal display[J]. SID Symposium Digest of Technical Papers , 2013, 44(1):1122-1125.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

摩擦工艺不良的探究