4-Mask工艺Cu腐蚀分析及改善研究

白金超; 李小龙; 韩皓; 张向蒙; 左天宇; 吴祖谋; 丁向前; 宋勇志; 陈维涛

doi:10.3788/YJYXS20193402.0125

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4-Mask工艺Cu腐蚀分析及改善研究

材料与器件 | 更新时间：2020-07-05

- 4-Mask工艺Cu腐蚀分析及改善研究
- Research of Cu corrosion in 4-Mask process
- 液晶与显示 2019年34卷第2期页码：125-129
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
  
  [ "白金超(1983-),男,河南南阳人,硕士,2010年于南开大学获得硕士学位,主要从事TFT-LCD工艺研究。E-mail:baijinchao@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20193402.0125
  中图分类号： TN141.9
- 收稿日期：2018-08-13，
  
  录用日期：2018-11-15，
  
  纸质出版日期：2019-02-05
- 稿件说明：
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白金超, 李小龙, 韩皓, 等. 4-Mask工艺Cu腐蚀分析及改善研究[J]. 液晶与显示, 2019,34(2):125-129.

Jin-chao BAI, Xiao-long LI, Hao HAN, et al. Research of Cu corrosion in 4-Mask process[J]. Chinese journal of liquid crystals and displays, 2019, 34(2): 125-129.
白金超, 李小龙, 韩皓, 等. 4-Mask工艺Cu腐蚀分析及改善研究[J]. 液晶与显示, 2019,34(2):125-129. DOI： 10.3788/YJYXS20193402.0125.

Jin-chao BAI, Xiao-long LI, Hao HAN, et al. Research of Cu corrosion in 4-Mask process[J]. Chinese journal of liquid crystals and displays, 2019, 34(2): 125-129. DOI： 10.3788/YJYXS20193402.0125.

摘要

针对4-Mask工艺铜数据线腐蚀造成的锯齿状不良现象进行系统研究，发现铜腐蚀发生的工艺步骤和机理，并找到有效的措施。首先，通过显微镜对每道刻蚀工艺后铜数据线形貌进行观测，确定铜腐蚀发生的工艺步骤。接着，通过扫描电子显微镜和X射线电子能谱测量腐蚀生产物成分，对腐蚀机理提出合理解释。最后在铜腐蚀发生机理基础上，提出有效的改善措施。铜腐蚀是在有源半导体层干刻和光刻胶的灰化综合作用下发生，其主要产物为氧化铜、氯化铜。通过先进行灰化工艺然后进行有源半导体层干刻的工艺措施，在铜数据线两侧形成氧化铜保护膜，可以彻底改善铜腐蚀。改善措施可以解决铜腐蚀的问题，彻底消除铜数据线锯齿状不良。

Abstract

The jagged defect of copper data lines caused by corrosion of copper in 4-Mask process was investigated systematically

the steps and mechanism of copper corrosion were found

and the effective measures to improve copper corrosion were established. Firstly

the morphology of copper data lines after each etching process was observed by microscope to determine the process steps of copper corrosion. Then

the composition of corrosion products was confirmed by scanning electron microscopy (SEM) and X-ray electron spectroscopy (EDS)

and the corrosion mechanism was explained reasonably. Finally

based on the mechanism of copper corrosion

effective improvement measures were put forward. Copper corrosion occurs under the combined action of a-Si dry etching and photoresist ashing

and the main products of copper corrosion are CuO and CuCl

. CuO protective film is formed on both sides of copper data line by ashing process first and then a-Si dry etching

so copper corrosion can be completely improved. The improvement measures can solve the problem of copper corrosion and eliminate the jagged defect of copper data lines.

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references

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