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ZnO纳米线的快速生长机理及其场发射性能研究
Rapid growth mechanism and field emission properties of ZnO nanowires
- 液晶与显示 2018年33卷第9期 页码：758-763
- 作者机构：
1.福建师范大学 协和学院, 福建 福州 350108
2.厦门理工学院 福建省功能材料及应用重点实验室, 福建 厦门 361024
3.西安交通大学 电子陶瓷与器件教育部重点实验室, 陕西 西安 710049
- 作者简介：
[ "郑中华(1985-), 男, 福建建瓯人, 硕士, 中级工程师, 2011年于西安交通大学获得硕士学位, 2016年获得电子中级工程师职称, 现为福建师范大学协和学院教师, 主要从事纳米功能材料及智能传感器的研究。E-mail:zhengzhonghua12@163.com" ]
[ "林建平(1982-), 男, 福建福州人, 博士, 副教授, 2013年于西安交通大学获得博士学位, 现为厦门理工学院副教授, 主要从事热电材料、金属陶瓷复合材料及相变储能材料研究。E-mail:jplin@xmut.edu.cn" ]
- 基金信息：福建省功能材料及应用重点实验室开放基金(fma2017206);Open Fund of Fujian Provencial Key Laboratory of Functional Materials and Application(fma2017206)
DOI：10.3788/YJYXS20183309.0758
中图分类号： O462.4收稿日期：2018-04-09，
录用日期：2018-6-21，
纸质出版日期：2018-09-05
- 稿件说明：
移动端阅览
郑中华, 林建平, 杨智. ZnO纳米线的快速生长机理及其场发射性能研究[J]. 液晶与显示, 2018,33(9):758-763.
Zhong-hua ZHENG, Jian-ping LIN, Zhi YANG. Rapid growth mechanism and field emission properties of ZnO nanowires[J]. Chinese journal of liquid crystals and displays, 2018, 33(9): 758-763.
郑中华, 林建平, 杨智. ZnO纳米线的快速生长机理及其场发射性能研究[J]. 液晶与显示, 2018,33(9):758-763. DOI： 10.3788/YJYXS20183309.0758.
Zhong-hua ZHENG, Jian-ping LIN, Zhi YANG. Rapid growth mechanism and field emission properties of ZnO nanowires[J]. Chinese journal of liquid crystals and displays, 2018, 33(9): 758-763. DOI： 10.3788/YJYXS20183309.0758.
摘要
为了快速制备具有优良场发射性能的ZnO纳米线，对ZnO纳米线的生长机理及场发射性能进行研究。首先采用优化的两步法制备出高长径比的ZnO纳米线，其次采用SEM对ZnO的微观形貌进行表征，然后，在分析形貌特点的基础上，说明了强碱体系下ZnO纳米线薄膜的快速生长机理。最后，对典型样品的场发射性能进行了测试。测试果表明，优化后的两步法，只需3 h即可获得直径为40~50nm，长度为2.2~2.7
μ
m，长径比高达54的纳米线。薄膜的开启电场为3.6 V/
μ
m，阈值场强为9.1 V/um，场增强因子
β
高达3 391。研究表明，高pH值溶液可以加快ZnO纳米线沿C轴方向的择优生长，获得高长径比的ZnO纳米线，进而获得优良的场发射性能。
Abstract
In order to prepare ZnO nanowires with excellent field emission performance
the growth mechanism and field emission performance were studied. Firstly
the high aspect ratio ZnO nanowires were prepared by the optimized two-step method. Secondly
the morphologies of ZnO were characterized by SEM. Then
based on the analysis of the morphological features
the rapid growth mechanism of the ZnO nanowires film under strong alkali conditions were described. Finally
the field emission performance of a typical sample was tested. The test results show that with the optimized two-step method
nanowires with a diameter of 40~50 nm
a length of 2.2~2.7
μ
m
and an aspect ratio of up to 54 can be obtained in only 3 h. The turn-on field of the film is 3.6 V/um
the threshold electric field is 9.1 V/
μ
m
and the field enhancement factor
β
is as high as 3 391. Studies have shown that high pH solution can accelerate the preferential growth of ZnO nanowire along the C-axis direction
obtain high aspect ratio ZnO nanowires
thereby obtaining excellent field emission performance.
关键词
Keywords
references
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