阵列基板栅极制程的Cu腐蚀研究

刘丹; 秦刚; 王任远; 吕俊君; 饶毅; 周禹; 王百强; 李路; 蔡卫超; 刘涛; 李晨雨; 陈国良

doi:10.3788/YJYXS20183309.0717

您当前的位置：

首页 >

文章列表页 >

阵列基板栅极制程的Cu腐蚀研究

材料与器件 | 更新时间：2020-07-06

- 阵列基板栅极制程的Cu腐蚀研究
- Cu corrosion of array substrate in gate process
- 液晶与显示 2018年33卷第9期页码：717-724
- 作者机构：
  
  重庆京东方光电科技有限公司光刻工程部, 重庆 400700
- 作者简介：
  
  [ "刘丹(1988-)男, 重庆忠县人, 硕士研究生, 高级工程师, 2014年于四川大学取得硕士学位, 从事光刻、湿法腐蚀等方面工作。E-mail:liudan_cq@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20183309.0717
  中图分类号： TP394.1;TH691.9
- 收稿日期：2018-04-23，
  
  录用日期：2018-5-15，
  
  纸质出版日期：2018-09-05
- 稿件说明：
移动端阅览
刘丹, 秦刚, 王任远, 等. 阵列基板栅极制程的Cu腐蚀研究[J]. 液晶与显示, 2018,33(9):717-724.

Dan LIU, Gang QIN, Ren-yuan WANG, et al. Cu corrosion of array substrate in gate process[J]. Chinese journal of liquid crystals and displays, 2018, 33(9): 717-724.
刘丹, 秦刚, 王任远, 等. 阵列基板栅极制程的Cu腐蚀研究[J]. 液晶与显示, 2018,33(9):717-724. DOI： 10.3788/YJYXS20183309.0717.

Dan LIU, Gang QIN, Ren-yuan WANG, et al. Cu corrosion of array substrate in gate process[J]. Chinese journal of liquid crystals and displays, 2018, 33(9): 717-724. DOI： 10.3788/YJYXS20183309.0717.

摘要

在大尺寸液晶显示器的薄膜晶体管（Thin Film Transistor，简称TFT）TFT工艺技术中，Cu正逐步取代Al作为电极材料。与Al电极制程相比，在进行栅极（Gate）制程时Cu容易发生腐蚀，这会降低产品良率。本文结合ADS（Advanced Super Demension Switch）显示模式下0+4掩膜板（mask）技术的Gate刻蚀制程和1+4掩膜版技术Gate光刻胶（Photo Resist，简称PR）剥离制程的Cu腐蚀现象进行分析，结合实验验证，确定Cu腐蚀原因，最终提出改善方案。实验结果表明：0+4mask技术的Gate制程中，ITO刻蚀液所含的HNO

会使MoNb/Cu结构电极的Cu发生电化学腐蚀；将电极结构更改为单Cu层则可以避免电化学腐蚀。在1+4mask技术的PR剥离（Strip）制程中，基板经历的剥离时间长或进行多次剥离或在剥离设备中停留，均会引起Cu腐蚀；增加剥离区间与水区间空气帘（Air Curtain）吹气量、增加TFT基板在过渡区间（H

O与剥离液接触的区间）的传输速度，管控剥离液使用时间等措施可以缓解Cu腐蚀。

Abstract

In the large-size TFT process technology

Cu gradually replaces Al as the electrode material. However

compared with Al electrode

Cu is more prone to corrode in Gate process reducing product yield. In this paper

Cu corrosion in Gate etch process of 0+4 mask technology and Gate strip process of 1+4 mask technology is analyzed when it comes to ADS display mode. Combined with experimental verification

the reason of Cu corrosion is determined. Finally

improvement programs are proposed. Experiment results show:In Gate etch process of 0+4 mask technology

HNO

contained in the ITO etchant will lead to galvanic corrosion of Cu in MoNb/Cu structured electrode. The galvanic corrosion can be avoided if the electrode structure is modified to a single Cu structure. In Gate strip process of 1+4 mask technology

Cu corrosion may be induced if the TFT substrate is stripped for a long time or repeatedly stripped or stayed in strip device for a long time. Increasing the blow rate of AC(Air Curtain) between strip zone and show zone

increasing the transfer speed of TFT substrate in transition zone(the section where H

O is in contact with stripper)

controlling the use time of stripper can relieve Cu corrosion.

关键词

Keywords

references

刘耀, 陈曦, 张小祥, 等.薄膜晶体管液晶显示器阵列工艺最终关键尺寸测试方法研究[J].液晶与显示, 2015, 30(5):784-789.

LIU Y, CHEN X, ZHANG X X, et al . Final critical dimension measuring method about TFT-LCD array process[J]. Chinese Journal of Liquid Crystals and Displays , 2015, 30(5):784-789. (in Chinese)

吴桂芳, 宋学平, 刘勇, 等.衬底温度对溅射硅基铜膜(Cu/Si)应力的影响研究[J].安徽大学学报:自然科学版, 2004, 28(3):27-32.

WU G F, SONG X P, LIU Y, et al . Effects of substrate temperature on the stress properties of sputtering Cu film on Si wafer[J]. Journal of Anhui University:Natural Science Edition , 2004, 28(3):27-32. (in Chinese)

王新建.溅射铜和铜合金薄膜的微观结构与性能——铜互连技术的基础研究[D].上海: 上海交通大学, 2009. http://cdmd.cnki.com.cn/article/cdmd-10248-2010033216.htm

WANG X J. Microstructure and properties of sputtered copper and copper alloy thin films-the fundamental study of copper-interconnection technique[D]. Shanghai: Shanghai Jiao Tong University, 2009. (in Chinese)

刘彬, 刘静, 吴振宇, 等.铜互连电迁移失效的研究与进展[J].微电子器件与技术, 2007, 44(4):211-216.

LIU B, LIU J, WU Z Y, et al . Research and development of the Cu interconnect and its electromigration failure[J]. Microelectronic Device & Technology , 2007, 44(4):211-216. (in Chinese)

KA J, CHO E N, LEE M J, et al . Electrode metal penetration of amorphous indium gallium zinc oxide semiconductor thin film transistors[J]. Current Applied Physics , 2015, 15(6):675-678.

LEE S H, PARK I S, SEO B H, et al . Effect of sputtering parameters on the adhesion force of copper/molybdenum metal on polymer substrate[J]. Current Applied Physics , 2011, 11(S5):S12-S15.

SEO B H, LEE S H, PARK I S, et al . Effect of nitric acid on wet etching behavior of Cu/Mo for TFT application[J]. Current Applied Physics , 2011, 11(S1):S262-S265.

SEO B H, LEE S H, PARK I S, et al . Effect of acetic acid on wet patterning of copper/molybdenum thin films in phosphoric acid solution[J]. The Solid Films , 2011, 519(20):6806-6809.

伍远辉, 刘天模, 孙成, 等.酸雨作用下酸性土壤酸化过程中铜的腐蚀行为[J].四川大学学报:工程科学版, 2010, 42(1):119-125.

WU Y H, LIU T M, SUN C, et al . Corrosion behaviors of copper in acidic soil acidified with simulated acid rain[J]. Journal of Sichuan University:Engineering Science Edition , 2010, 42(1):119-125. (in Chinese)

何建波, 李学良, 林建新.浓碱溶液中铜阳极产物的阴极还原行为研究Ⅰ. Cu(Ⅰ)产物的阴极还原[J].化学学报, 1997, 55(11):1103-1107.

HE J B, LI X L, LIN X J. Investigation on electro-reduction behaviour of copper anodic products in concentrated NaOH solutions Ⅰ. Electro-reduction Cu(Ⅰ) products[J]. Acta Chimica Sinica , 1997, 55(11):1103-1107. (in Chinese)

何建波, 陈涵禾, 林建新.浓碱溶液中铜阳极产物的阴极还原行为研究Ⅱ. Cu(Ⅱ)产物的阴极还原[J].电化学, 1997, 3(3):297-301.

HE J B, CHEN H H, LIN J X. Investigation on electro-reduction behaviour of copper anodic products in concentrated NaOH solutions Ⅱ. Electro-reduction Cu(Ⅱ) products[J]. Electrochemistry , 1997, 3(3):297-301. (in Chinese)

何建波, 林建新.铜在碱性溶液中阳极过程的研究[J].高等学校化学学报, 1996, 17(2):290-293.

HE J B, LIN J X. A study of anodic process of copper in NaOH solution[J]. Chemical Journal of Chinese Universities , 1996, 17(2):290-293. (in Chinese)

HULTQUIST G, GRAHAM M J, KODRAO, et al . Corrosion of copper in distilled water without O 2 and the detection of produced hydrogen[J]. Corrosion Science , 2015, 95:162-167.

HULTQUIST G. Why copper may be able to corrode in pure water[J]. Corrosion Science , 2015, 93:327-329.

廖燕平, 宋勇志, 邵喜斌, 等.薄膜晶体管液晶显示器显示原理与设计[M].北京:电子工业出版社, 2016.

LIAO Y P, SONG Z Y, SHAO X B, et al . Thin Film Transistor Liquid Crystal Display [M]. Beijing:Publishing House of Electronics Industry, 2016. (in Chinese)

谷至华.薄膜晶体管(TFT)阵列制造技术[M].上海:复旦大学出版社, 2007.

GU Z H. Thin Film Transistor (TFT) array manufacturing technology [M]. Shanghai:Fudan University Press, 2007. (in Chinese)

浏览量

123

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据