光刻胶段差对光刻图形的影响与改善

张玉虎; 李亚文; 刘小波; 马小辉; 张旭

doi:10.3788/YJYXS20183308.0653

您当前的位置：

首页 >

文章列表页 >

光刻胶段差对光刻图形的影响与改善

材料与器件 | 更新时间：2020-07-06

- 光刻胶段差对光刻图形的影响与改善
- Effect of segment difference of photoresist on lithography pattern and improvement
- 液晶与显示 2018年33卷第8期页码：653-660
- 作者机构：
  
  合肥京东方光电科技有限公司, 安徽合肥 230012
- 作者简介：
  
  [ "张玉虎(1983-), 男, 安徽霍邱人, 硕士, 资深高级工程师, 2010年于合肥工业大学获得硕士学位, 主要从事光刻设备维护及工艺改善工作。E-mail:zhangyuhu@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20183308.0653
  中图分类号： TN305.7
- 收稿日期：2018-05-07，
  
  录用日期：2018-6-6，
  
  纸质出版日期：2018-08-05
- 稿件说明：
移动端阅览
张玉虎, 李亚文, 刘小波, 等. 光刻胶段差对光刻图形的影响与改善[J]. 液晶与显示, 2018,33(8):653-660.

Yu-hu ZHANG, Ya-wen LI, Xiao-bo LIU, et al. Effect of segment difference of photoresist on lithography pattern and improvement[J]. Chinese journal of liquid crystals and displays, 2018, 33(8): 653-660.
张玉虎, 李亚文, 刘小波, 等. 光刻胶段差对光刻图形的影响与改善[J]. 液晶与显示, 2018,33(8):653-660. DOI： 10.3788/YJYXS20183308.0653.

Yu-hu ZHANG, Ya-wen LI, Xiao-bo LIU, et al. Effect of segment difference of photoresist on lithography pattern and improvement[J]. Chinese journal of liquid crystals and displays, 2018, 33(8): 653-660. DOI： 10.3788/YJYXS20183308.0653.

摘要

TFT光刻制程中，光刻胶段差使光胶在同一个光刻平面上，各区域的光刻程度不同，严重影响着光刻图形的质量。文章从光刻胶段差对光刻图形影响的原因进行分析，根据光强在投影光刻机光刻系统中焦点附近与光刻胶内部的变化特点，推导并计算出光刻胶段差区域内光强变化量为零时，光刻系统中光刻平面所应处于的位置，同时结合当前光刻系统焦平面的位置，计算出光刻平面的调整量，并以该调整量对当前光刻平面进行调整。结果表明：对于极限分辨率为2.41

m的投影光刻机，要使厚0.52

m的光刻胶段差内光强变化量为零，光刻平面调整量为9.434 42

m，且对光刻平面调整后10

m后，在DICD（Develop Inspection Critical Dimension）变化量较小的情况下，可显著改善沟道长为2.5

m的GOA（gate drive on array）区域的光刻胶残留。

Abstract

In the TFT lithography process

the segment difference of the photoresist make the lithography level of the each region of the photoresist be different on the same lithography plane

which seriously affect the quality of the lithography pattern. In this paper

the reason for the effect of the segment difference of photoresist on the lithography pattern is analyzed. Based on the characteristics of the light intensity change near the focal point of the lithography system of the projection lithography machine and the internal of the photoresist

the position of the lithography plane in the lithography system is calculated when the light intensity change is zero in the area of the segment difference of the photoresist. Combining with the position of the current focal plane in the lithography system

the adjustment amount of the lithography plane is calculated

and the current lithography plane is adjusted by the adjustment amount. The results show

for the projection lithography machine of the 2.41

m limit resolution

if the light intensity change of the 0.52

m segment difference of the photoresist is zero

the lithography plane need to adjust 9.434 42

m. By adjusting 10

m for the lithography plane

the change amount of the DICD(Develop Inspection Critical Dimension)is little

but for the GOA (gate drive on array) channel which length is 2.5

the improvement of the photoresist remain is significant.

关键词

Keywords

references

肖文俊. 薄膜晶体管液晶显示器的串扰研究[D]. 北京: 北京交通大学, 2014.

XIAO W J. A research on crosstalk in TFT-LCDs[D]. Beijing: Beijing Jiaotong University, 2014. (in Chinese)

王玉如.液晶显示技术的最新进展[J].现代电子技术, 2004, 27(22):85-87.

WANG Y R. The new development of TFT-LCD[J]. Modern Electronics Technique, 2004, 27(22):85-87. (in Chinese)

韦亚一, 粟雅娟, 刘艳松.先导光刻中的光学邻近效应修正[J].微纳电子技术, 2014, 51(3):186-193.

WEI Y Y, SU Y J, LIU Y S. Optical proximity correction in the advanced photolithography[J]. Micronanoelectronic Technology, 2014, 51(3):186-193. (in Chinese)

冯伯儒, 张锦, 侯德胜, 等.相移掩模和光学邻近效应校正光刻技术[J].光电工程, 2001, 28(1):1-5.

FENG B R, ZHANG J, HOU D S, et al. Optical microlithography with phase-shifting mask and optical proximity effect correction[J]. Opto-Electronic Engineering, 2001, 28(1):1-5. (in Chinese)

张玉虎, 岳浩, 王军帽, 等.TFT光刻DICD均一性改善优化[J].液晶与显示, 2016, 31(10):930-935.

ZHANG Y H, YUE H, WANG J M, et al. Improvement of uniformity of TFT lithography DICD[J]. Chinese Journal of Liquid Crystals and Displays, 2016, 31(10):930-935. (in Chinese)

缪小运. 先进光刻系统中焦平面测量与控制的研究[D]. 上海: 复旦大学, 2006. http://www.wanfangdata.com.cn/details/detail.do?_type=degree&id=Y1021731

MIU X Y. The study on the advanced lithography system of the focal plane measurement and control[D]. Shanghai: Fudan University, 2006. (in Chinese)

辛玉洁, 于春崎.TFT 5次光刻背沟道刻蚀型与保护型工艺[J].半导体技术, 2008, 33(12):1080-1083.

XIN Y J, YU C Q. Process of TFT 5PEP of back-channel-etching and back-channel protection[J]. Semiconductor Technology, 2008, 33(12):1080-1083. (in Chinese)

苏雷. 光刻胶黏附力对MEMS工艺影响的研究[D]. 天津: 天津大学, 2011. http://cdmd.cnki.com.cn/Article/CDMD-10056-1012021636.htm

SU L. Research on photoresist adhesion influence on MEMS[D]. Tianjin: Tianjin University, 2011. (in Chinese)

赵凯华.光学[M].北京:高等教育出版社, 2004.

ZHAO K H. Optics[M]. Beijing:Higher Education Press, 2004. (in Chinese)

冯明, 黄庆安, 李伟华, 等.SU-8胶深紫外光刻模拟[J].半导体学报, 2007, 28(9):1465-1470.

FENG M, HUANG Q A, LI W H, et al. Simulation of SU-8 photoresist profile in deep UV lithography[J]. Chinese Journal of Semiconductors, 2007, 28(9):1465-1470. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

光刻胶成分优化对彩膜预烘烤工艺升华物的改善

TFT-LCD一种绿Mura机理分析和改善

TFT-LCD制造行业VOCs排放特征及减排效果

全染料系光刻胶在液晶显示器中的应用

感应耦合等离子体干法刻蚀中光刻胶异常变性的改善