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1.福州京东方光电科技有限公司, 福建 福州 350300
2.北京京东方显示技术有限公司, 北京 100176
3.京东方科技集团股份有限公司, 北京 100176
[ "吕耀朝(1980-), 男, 福建建阳人, 硕士, 中级研究员, 主要从事TFT-LCD相关研发工作。E-mail:lvyaochao@boe.com.cn" ]
收稿日期:2018-03-18,
录用日期:2018-4-17,
纸质出版日期:2018-08-05
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吕耀朝, 林鸿涛, 陈曦, 等. TFT-LCD背板设计对线残像改善的研究[J]. 液晶与显示, 2018,33(8):625-630.
Yao-chao LV, Hong-tao LIN, Xi CHEN, et al. Investigation on the improvement of line image sticking by array mask design of TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2018, 33(8): 625-630.
吕耀朝, 林鸿涛, 陈曦, 等. TFT-LCD背板设计对线残像改善的研究[J]. 液晶与显示, 2018,33(8):625-630. DOI: 10.3788/YJYXS20183308.0625.
Yao-chao LV, Hong-tao LIN, Xi CHEN, et al. Investigation on the improvement of line image sticking by array mask design of TFT-LCD[J]. Chinese journal of liquid crystals and displays, 2018, 33(8): 625-630. DOI: 10.3788/YJYXS20183308.0625.
线残像一直是TFT-LCD行业中一个重点改善的不良之一。为了解决该不良,本文通过对不同样品进行线残像评价及测试公共电极电压的畸变情况,从TFT-LCD背板设计方面研究了公共电极电压的畸变对线残像的影响。首先,通过激光熔接的方法将屏内的公共电极电压信号引出,然后测出在信号线电压作用下的公共电极电压发生畸变的幅值,最后将该幅值和实测的线残像水平进行了对比,同时对不同信号线数量、信号线和公共电极的交叠面积、信号线与公共电极的距离、外围电路补偿等相关设计的测试和研究。结果表明:公共电极电压的畸变程度与线残像水平具有对应性;信号线数量与公共电极电压畸变幅值成比例关系;信号线与公共电极线的单位交叠面积从66
μ
m
2
降到37
μ
m
2
时,其公共电极电压畸变程度降低了63%;增大公共电极与信号线之间的距离有助于改善甚至消除线残像,当距离从1.49
μ
m增大到2.39
μ
m时,公共电极电压畸变幅值减小了28%。通过降低信号线数量、降低信号线和公共电极线的交叠面积、增大信号线和公共电极的距离、外围电路补偿等方案均可改善线残像水平,对TFT-LCD画面显示品质的提高具有重要指导意义。
Line image sticking is one of issue all along which needs to be improved in TFT-LCD industry. In order to solve this problem
the evaluation of line image sticking level and the common voltage(
V
com
) distortion of different productions were tested
and the effect of Vcom distortion on line image sticking was investigate in the aspect of array mask design. First of all
laser wedding was used to help us to test the signal of
V
com
in panel
then the
V
com
distortion could be tested when data voltage was inputted. Finally the
V
com
distortion and line image sticking level were compared
in the meantime
number of data line
the overlap area between data line and Common line
the distance between data line and Common electrode and circuit compensation which are related to array mask design were analyzed. The result suggests that
V
com
distortion corresponds to line image sticking level;
V
com
distortion increases with the number of data line;
V
com
distortion decreases by 63% when the overlap of data line and Common line decreases from 66
μ
m
2
to 37
μ
m
2
; Increasing the distance between data line and common electrode can improve line image sticking
V
com
distortion decreases by 28% when distance increases from 1.49
μ
m to 2.39
μ
m. Decreasing the number of data line
decreasing the overlap area between data line and Common line
increasing the distance between data line and Common electrode and circuit compensation were considered to be effective to improve line image sticking
which is of vital importance for the image quality of TFT-LCD.
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LIU L, LIAO Y P, SONGJ J, et al . Research on line image sticking for large size high resolution TFT-LCD panel[C]// International Meeting on Information Display . 2015 Digest. Daegu, Korea: IMID, 2015: 23-28.
焦峰, 王海宏.TFT-LCD残像原理与分析-加强篇二[J].现代显示, 2012(6):17-20.
JIAO F, WANG H H. The theory and analysis of TFT-LCD image sticking-upgrade Ⅱ[J]. Advanced Display, 2012(6):17-20. (in Chinese)
林鸿涛, 郤玉生, 胡海琛, 等.TFT-LCD中驱动信号对线残像的改善研究[J].液晶与显示, 2012, 27(3):359-363.
LIN H T, XI Y S, HU H C, et al. Improvement research of line image sticking by drive signal in TFT-LCD[J]. Chinese Journal of Liquid Crystals and Displays, 2012, 27(3):359-363. (in Chinese)
廖燕平, 宋勇志, 邵喜斌, 等.薄膜晶体管液晶显示器显示原理与设计[M].北京:电子工业出版社, 2016:73-83.
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LIU P M, LIEN S C, HUANG C H, et al . Driving method for reducing image sticking: US, US8674916[P]. 2014-03-18.
ZHAO Y P, ZHANG D L, KONG G L, et al. Evidence for light-induced increase of Si-H bonds in undoped a-Si:H[J]. Physical Review Letters, 1995, 74(4):558-561.
YUE G Z, KONG G L, ZHANG D L, et al., Dielectric response and its light-induced change in undoped a-Si:H films below 13 MHz[J].Physical Review B, 1998, 57(4):2387-2392.
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