温度系数连续可调的带隙基准源电路设计

庄楚楠; 许佳雄

doi:10.3788/YJYXS20183305.0412

您当前的位置：

首页 >

文章列表页 >

温度系数连续可调的带隙基准源电路设计

图像处理 | 更新时间：2020-08-12

- 温度系数连续可调的带隙基准源电路设计
- Design of bandgap reference circuit with continuously adjustable temperature coefficient
- 液晶与显示 2018年33卷第5期页码：412-417
- 作者机构：
  
  广东工业大学材料与能源学院, 广东广州 510006
- 作者简介：
  
  [ "庄楚楠(1995-), 男, 广东湛江人, 硕士研究生, 主要从事模拟集成电路设计和半导体光电器件方面的研究。E-mail:zcn574918628@126.com" ]
  [ "许佳雄(1984-), 男, 广东揭阳人, 博士, 副教授, 硕士生导师, 主要从事半导体光电器件和集成电路设计等方面的研究。E-mail:xujiaxiong@gdut.edu.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20183305.0412
  中图分类号： TN433
- 收稿日期：2017-12-05，
  
  录用日期：2018-3-9，
  
  纸质出版日期：2018-05
- 稿件说明：
移动端阅览
庄楚楠, 许佳雄. 温度系数连续可调的带隙基准源电路设计[J]. 液晶与显示, 2018,33(5):412-417.

Chu-nan ZHUANG, Jia-xiong XU. Design of bandgap reference circuit with continuously adjustable temperature coefficient[J]. Chinese journal of liquid crystals and displays, 2018, 33(5): 412-417.
庄楚楠, 许佳雄. 温度系数连续可调的带隙基准源电路设计[J]. 液晶与显示, 2018,33(5):412-417. DOI： 10.3788/YJYXS20183305.0412.

Chu-nan ZHUANG, Jia-xiong XU. Design of bandgap reference circuit with continuously adjustable temperature coefficient[J]. Chinese journal of liquid crystals and displays, 2018, 33(5): 412-417. DOI： 10.3788/YJYXS20183305.0412.

摘要

为了对薄膜晶体管液晶显示器（TFT-LCD）驱动芯片的驱动电压进行温度补偿以改善TFT-LCD的性能，本文基于标准CMOS（3.3 V）的chrt35rf 0.35 μm工艺，设计了一款温度系数可连续调节的带隙基准电压源，其中包括核心电路、运算放大器电路和启动电路3个子模块。该电路使用MOS晶体管作为可变电阻，通过调节MOS栅极电压控制MOS漏源等效电阻的连续可变，进而改变电路中的电阻比值，实现带隙基准源的温度系数连续可调。使用Cadence的Spectre仿真器进行仿真，结果表明，在-25~125℃的工作温度范围内，带隙基准源电路的输出电压的正温度系数可连续调节范围为156.6~2 545.0 ppm/℃，输出电压的负温度系数的连续变化范围为156.6~1 337.7 ppm/℃，输出基准电压变化为0.95~2.67 V，低频时基准电压的电源抑制比达到73.13 dB。该电路实现了基准电压从负温度系数向正温度系数的连续可调节，且调节范围较大。

Abstract

In order to compensate the driving voltage of driver chip of thin-film-transistor liquid crystal display(TFT-LCD) to improve the performance of TFT-LCD

in this paper

based on the standard CMOS (3.3 V) chrt35rf 0.35 m process

a bandgap reference circuit with continuously adjustable temperature coefficient is designed. The circuit includes three sub-modules of a core circuit

an operational amplifier circuit

and a startup circuit. Using a MOS transistor as a variable resistor

the source-drain equivalent resistance of MOS can be changed continuously by the gate voltage. Then

the temperature coefficient of the bandgap reference can be adjusted continuously by changing the resistance ratio in the circuit. The designed circuit is simulated by the Cadence Specter simulator. The results show that in the working temperature range from -25 to 125℃

the positive temperature coefficient

negative temperature coefficient

and output voltage are 156.6~2 545.0 ppm/℃

156.6~1 337.7 ppm/℃

and 0.95~2.67V

respectively. The power supply rejection ratio(PSRR) of the reference voltage at low frequencies reaches 73.13 dB. The circuit achieves continuous adjustment of the reference voltage from negative temperature coefficient to positive temperature coefficient. In addition

the adjustment range of temperature coefficient is large.

关键词

Keywords

references

习江艳, 魏廷存.温度系数可调的基准电压产生电路研究与设计[J].液晶与显示, 2006, 21(5):574-578.

XI J Y, WEI T C. Study and design of reference voltage generator with adjustable temperature coefficient[J]. Chinese Journal of Liquid Crystals and Displays , 2006, 21(5):574-578. (in Chinese)

仇岩, 魏廷存, 王佳, 等.一种基于控制PTAT电流的温度系数可调带隙基准源[J].液晶与显示, 2010, 25(1):106-109.

CHOU Y, WEI T C, WANG J, et al . Bandgap reference with adjustable temperature coefficient based on controlling PTAT current[J]. Chinese Journal of Liquid Crystals and Displays , 2010, 25(1):106-109. (in Chinese)

童诗白, 华成英.模拟电子技术基础(第5版)[M].北京:高等教育出版社, 2015:24-42.

TONG S B, HUA C Y. Fundamentals of analog electronic technology (The fifth edition) [M]. Beijing:Higher Education Press, 2015:24-42. (in Chinese)

幸新鹏, 李冬梅, 王志华.CMOS带隙基准源研究现状[J].微电子学, 2008, (01):57-62.

XIN X P, LI D M, WANG Z H. Research status of CMOS bandgap reference[J]. Microelectronics , 2008, 38(1):57-62. (in Chinese)

毕查德·拉扎维.模拟CMOS集成电路设计[M].西安:西安交通大学出版社, 2003:309-324.

Behzad Razavi. Design of Analog CMOS Integrated Circuits [M]. Xi'an:Xi'an Jiaotong University Press, 2003:309-324. (in Chinese)

李琪, 包盼盼, 徐学成. CMOS两级运放的设计[J].硅谷, 2011, 11(1):67.

LI Q, BAO P P, XU X C. Design of CMOS two-stage amplifier[J]. Silicon Valley, 2011, 11(1):67. (in Chinese)

李伟, 唐亮, 苗澎.一种输出电压可调带隙基准源设计[J].电子元件与材料, 2015, 34(1):80-83.

LI W, TANG L, MIAO P. Bandgap reference design with adjustable output voltage[J]. Electronic Components and Materials , 2015, 34(1):80-83. (in Chinese)

陈铖颖, 杨丽琼, 王统. CMOS模拟集成电路设计与仿真实例——基于Cadence ADE[M].北京:电子工业出版社, 2013:24-42.

CHEN C Y, YANG L Q, WANG T. Design and simulation example of CMOS analog integrated circuit——Base on Cadence ADE [M]. Beijing:Electronic Industry Press, 2013:24-42. (in Chinese)

马林. 基于CMOS工艺的带隙基准源设计[D]. 哈尔滨: 黑龙江大学, 2015. http://cdmd.cnki.com.cn/Article/CDMD-10212-1016029479.htm

MA L. Design of bandgap reference based on CMOS technology[D]. Harbin: Heilongjiang University, 2015. (in Chinese)

HASTINGS A.模拟版图的艺术[M].第2版.北京:电子工业出版社, 2011:237-242.

HASTINGS A.Theart of analog layout[M]. The Second Edition. Beijing:Electronic Industry Press, 2011:237-242. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

一种基于控制PTAT电流的温度系数可调带隙基准源