氮化硅的ECCP刻蚀特性研究

白金超; 王静; 赵磊; 张益存; 郭会斌; 曲泓铭; 宋勇志; 张亮

doi:10.3788/YJYXS20173210.0533

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氮化硅的ECCP刻蚀特性研究

材料科学 | 更新时间：2020-08-12

- 氮化硅的ECCP刻蚀特性研究
- Etching characteristics of silicon nitride by ECCP
- 液晶与显示 2017年32卷第7期页码：533-537
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
  
  [ "白金超(1983-), 男, 河南南阳人, 硕士研究生, 毕业于南开大学, 主要从事TFT-LCD工艺研究。E-mail:baijinchao@boe.com.cn" ]
- 基金信息：
- DOI：10.3788/YJYXS20173210.0533
  中图分类号： TN141.9
- 收稿日期：2016-05-04，
  
  录用日期：2016-8-10，
  
  纸质出版日期：2017-07-05
- 稿件说明：
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白金超, 王静, 赵磊, 等. 氮化硅的ECCP刻蚀特性研究[J]. 液晶与显示, 2017,32(7):533-537.

Jin-chao BAI, Jing WANG, Lei ZHAO, et al. Etching characteristics of silicon nitride by ECCP[J]. Chinese journal of liquid crystals and displays, 2017, 32(7): 533-537.
白金超, 王静, 赵磊, 等. 氮化硅的ECCP刻蚀特性研究[J]. 液晶与显示, 2017,32(7):533-537. DOI： 10.3788/YJYXS20173210.0533.

Jin-chao BAI, Jing WANG, Lei ZHAO, et al. Etching characteristics of silicon nitride by ECCP[J]. Chinese journal of liquid crystals and displays, 2017, 32(7): 533-537. DOI： 10.3788/YJYXS20173210.0533.

摘要

本文对氮化硅的增强电容耦合等离子刻蚀进行研究，为氮化硅刻蚀工艺的优化提供参考。针对SF

气体体系，通过设计实验考察了功率、压强、气体比、氦气等对刻蚀速率和均一性的影响，并对结果进行机理分析和讨论。实验结果表明：功率越大，刻蚀速率越大，与源极射频电力相比，偏置射频电力对刻蚀速率的影响更为显著；压强增大，刻蚀速率增大，但压强增大到一定程度后，刻蚀速率基本不变，刻蚀均匀性随着压强增大而变差；在保证SF

总流量保持不变下，O

的比例增大，刻蚀速率先增大后减小，刻蚀均匀性逐步变好；He的添加可以改善刻蚀均匀性，但He的添加量过多时，会造成刻蚀速率降低。

Abstract

In order to optimize etching process of silicon nitride (SiN

)

the enhanced capacitive coupled plasma etching (ECCP)of silicon nitride was researched. With SF

as etch gas

the effects of main parameters such as power

pressure

gas rate and He gas on etch rate and uniformity has been studied

and the mechanism of test result was analysed. The results show that power increases

etch rate increases

and compared with the source RF power

the effect of the bias RF power on the etch rate is more significant; pressure increases

the etch rate increases

but the pressure increases to a certain extent

the etch rate is basically the same

the etch uniformity becomes worse with the increase of pressure; under the condition that the total flow rate of SF

is kept constant

the proportion of O

increases

the etch rate increases and then decreases

and the etch uniformity is gradually getting better; the addition of He can improve the etch uniformity

but when the amount of He is too much

it will cause the reduction of the etch rate.

关键词

Keywords

references

吴清鑫, 陈光红, 于映, 等. PECVD法生长氮化硅工艺的研究[J].功能材料, 2007, 38(5):703-705.

WU Q X, CHEN G H, YU Y, et al . The study on technology for the silicon nitride thin films by PECVD [J]. Journal of Functional Materials, 2007, 38(5): 703-705. (in Chinese)

苟君, 吴志明, 太惠玲, 等.氮化硅的反应离子刻蚀研究[J].电子器件, 2009, 32(5):864-866.

GOU J, WU Z M, TAI H L, et al . Study on the reactive ion etching of Si3N4 [J]. Advanced Chinese Journal of Electron Devices , 2009, 32 (5): 864-866. (in Chinese)

王晓光, 朱晓明, 尹延昭.等离子体刻蚀工艺的优化研究[J].中国新技术新产品, 2010(14):22.

WANG X G, ZHU X M, YIN Y Z. Improvement research of plasma etch [J]. China New Technologies and Products , 2010(14): 22. (in Chinese)

李田生, 陈旭, 谢振宇, 等.过孔刻蚀工艺优化对过孔尺寸减小的研究[J].液晶与显示, 2014, 29(5):674-680.

LIU T S, CHEN X, XIE Z Y, et al . Improvement research of via hole minimized by via hole etch conditions [J]. Chinese Journal of Liquid Crystals and Displays , 2014, 29(5): 674-680. (in Chinese)

谢晓强, 戴旭涵, 赵小林, 等.反应离子刻蚀中的边缘效应及其补偿办法[J].真空电子技术, 2005(2):41-44.

XIE X Q, DAI X H, ZHAO X L, et al . The edge effect in high power RIE and compensatory approach [J]. Vacuum Electronics , 2005(2): 41-44. (in Chinese)

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