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北京京东方显示技术有限公司, 北京 100176
[ "张光明(1983-),男,河北唐山人,硕士研究生,毕业于北京化工大学,主要从事TFT-LCD Array工艺和技术方面的工作。E-mail:zgm20030530225@163.com" ]
收稿日期:2016-05-09,
录用日期:2016-05-31,
纸质出版日期:2017-05
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张光明, 白金超, 曲泓铭, 等. 垂直线不良分析与改善[J]. 液晶与显示, 2017,32(5):352-356.
Guang-ming ZHANG, Jin-chao BAI, Hong-ming QU, et al. Analysis and improvement of vertical line mura[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 352-356.
张光明, 白金超, 曲泓铭, 等. 垂直线不良分析与改善[J]. 液晶与显示, 2017,32(5):352-356. DOI: 10.3788/YJYXS20173205.0352.
Guang-ming ZHANG, Jin-chao BAI, Hong-ming QU, et al. Analysis and improvement of vertical line mura[J]. Chinese journal of liquid crystals and displays, 2017, 32(5): 352-356. DOI: 10.3788/YJYXS20173205.0352.
针对栅极绝缘层和栅极引线接触处形成过孔倒角造成的一种垂直线不良进行分析和改善。研究气相沉积、干法刻蚀和磁控溅射对过孔倒角的影响,通过扫描电子显微镜对过孔形貌进行表征,并用成盒检测设备检测不良发生情况。实验结果表明:通过过孔刻蚀功率、气压、气体流量的变更可以消除倒角现象,垂直线不良由1.4%降为0.7%。
The vertical line mura which was caused by the via hole undercut between gate insulating layer and gate line has been researched. The effect of plasma enhanced chemical vapor deposition (PECVD)
dry etch
sputter on via hole undercut was studied
and via hole morphology was characterized by scanning electron microscopy (SEM)
the ratio of vertical line mura was tested by cell test equipment. The via hole undercut can be removed by changing via etch power
pressure
gas flow
and the vertical line was reduced from 1.4% to 0.7%.
高荣荣,姚成宜,叶超前,等. 关于TN型TFT-LCD中周边Mura的分析与改善[J]. 电子世界, 2014(18):160.
GAO R R, YAO C Y, YE C Q, et al. Analysis and improvement of Mura in peripheral TN of TFT-LCD type[J]. Electronics World, 2014(18):160. (in Chinese)
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KAGAN C R, ANDRY P. Thin Film Transistor (TFT) and Its Application in Flat Panel Display[M]. LIAO Y P, WANG J, Trans. Beijing:Electronic Industry Press, 2008:132-178. (in Chinese)
GRUNER G. Carbon nanotube films for transparent and plastic electronics[J]. Journal of Materials Chemistry, 2006, 16(35):3533-3539.
刘翔,薛建设,周伟峰,等. 改善沉积氮化硅薄膜对FFS-TFT透明电极ITO影响的研究[J]. 真空科学与技术学报, 2012,32(1):36-38.
LIU X, XUE J S, ZHOU W F,et al. SiN x buffer layers and transparence improvement of indium-Tin-oxide electrode[J]. Chinese Journal of Vacuum Science and Technology, 2012, 32(1):36-38. (in Chinese)
白金超,王玉堂,郭总杰,等. TFT-LCD过孔接触电阻研究[J]. 液晶与显示, 2015,30(3):432-436.
BAI J C, WANG Y T, GUO Z J,et al. Via hole contact resistance in TFT-LCD[J]. Chinese Journal of Liquid Crystals and Displays, 2015, 30(3):432-436. (in Chinese)
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