搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究

张猛; 夏之荷; 周玮; 陈荣盛; 王文; 郭海成

doi:10.3788/YJYXS20173202.0091

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搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究

材料与器件 | 更新时间：2020-07-07

- 搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究
- Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress
- 液晶与显示 2017年32卷第2期页码：91-96
- 作者机构：
  
  香港科技大学先进显示与光电子技术国家重点实验室, 香港
- 作者简介：
  
  [ "张猛(1985-), 男, 博士, 副研究员, 主要从事薄膜晶体管方面的研究。E-mail:zhangmeng@connenct.ust.hk" ]
  郭海成(1951-), 男, IEEE院士, 美国光学学会院士, 国际信息显示学会院士, 亚太材料科学院院士。现任香港科技大学先进显示与光电子技术国家重点实验室主任。E-mail:eekwok@ust.hk
- 基金信息：
  
  香港研究资助局主题研究计划项目(NO.T23-713/11-1);Supported by the Hong Kong Government Research Grants Council Theme-Based Research Scheme under Grant(T23-713/11-1)
- DOI：10.3788/YJYXS20173202.0091
  中图分类号： TP394.1
- 收稿日期：2016-09-19，
  
  录用日期：2016-11-10，
  
  纸质出版日期：2017-02-05
- 稿件说明：
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张猛, 夏之荷, 周玮, 等. 搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究[J]. 液晶与显示, 2017,32(2):91-96.

Meng ZHANG, Zhi-he XIA, Wei ZHOU, et al. Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress[J]. Chinese journal of liquid crystals and displays, 2017, 32(2): 91-96.
张猛, 夏之荷, 周玮, 等. 搭桥晶粒多晶硅薄膜晶体管栅交流电应力下的退化行为与退化机制研究[J]. 液晶与显示, 2017,32(2):91-96. DOI： 10.3788/YJYXS20173202.0091.

Meng ZHANG, Zhi-he XIA, Wei ZHOU, et al. Degradation behavior and degradation mechanism of bridged-grain polycrystalline silicon thin film transistors under AC gate bias stress[J]. Chinese journal of liquid crystals and displays, 2017, 32(2): 91-96. DOI： 10.3788/YJYXS20173202.0091.

摘要

本文主要研究了搭桥晶粒（BG）多晶硅薄膜晶体管（TFT）在栅交流电应力下的退化行为和退化机制。在栅交流应力下，动态热载流子效应主导了器件的退化。器件退化只与栅脉冲下降沿有关。越快的下降沿带来越大的动态热载流子退化。比起普通多晶硅TFT，BG多晶硅TFT的热载流子退化大幅度减弱。通过选择性的掺杂注入BG线，沟道中形成的PN结在反向偏置时可以有效分担栅交流电应力带来的电压差，从而减弱动态热载子退化。辅以瞬态模拟结果，栅交流电应力下的退化机制被阐明。所有的测试结果都表明这种高性能高可靠性的BG多晶硅TFT在片上系统应用中具有很大的应用前景。

Abstract

Degradation behavior and degradation mechanism of bridged-grain (BG) polycrystalline silicon thin film transistors (TFTs) under AC gate bias stress are studied and investigated. It is found that dynamic hot carrier (HC) effect dominates the device degradation. The degradation is only related to gate pulse falling time (

). Faster

brings larger dynamic HC degradation. Compared with normal poly-Si TFTs

the dynamic HC degradation of BG poly-Si TFTs under the same stress is greatly reduced. By selectively doping the active channel

the multiple PN junctions inherent can effectively share the voltage drop

resulting in better dynamic HC reliability. Based on transient simulations

the related degradation mechanism is clarified. All test results indicate that such high-performance and highly reliable BG poly-Si TFTs have great potential in system-on-panel applications.

关键词

Keywords

references

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