ADS模式低存储电容像素设计

栗鹏; 朴正淏; 金熙哲; 金在光; 尚飞; 邱海军; 高文宝; 韩乾浩

doi:10.3788/YJYXS20173201.0019

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ADS模式低存储电容像素设计

材料与器件 | 更新时间：2020-07-07

- ADS模式低存储电容像素设计
- Low storage capacitance pixel design of ADS mode
- 液晶与显示 2017年32卷第1期页码：19-22
- 作者机构：
  
  重庆京东方光电科技有限公司, 重庆 400700
- 作者简介：
  
  栗鹏(1988-),男,河北任丘人,2011年于河北工业大学获得学士学位,2014年于河北工业大学获得硕士学位,现为重庆京东方光电科技有限公司产品开发研究员,主要从事TFT-LCDCell设计相关工作。E-mail:lipeng_cq@boe.com.cn
- 基金信息：
- DOI：10.3788/YJYXS20173201.0019
  中图分类号： TP394.1;TH691.9
- 收稿日期：2016-04-06，
  
  录用日期：2016-7-15，
  
  纸质出版日期：2017-01
- 稿件说明：
移动端阅览
栗鹏, 朴正淏, 金熙哲, 等. ADS模式低存储电容像素设计[J]. 液晶与显示, 2017,32(1):19-22.

Peng LI, Zheng-hao PIAO, Xi-zhe JIN, et al. Low storage capacitance pixel design of ADS mode[J]. Chinese journal of liquid crystals and displays, 2017, 32(1): 19-22.
栗鹏, 朴正淏, 金熙哲, 等. ADS模式低存储电容像素设计[J]. 液晶与显示, 2017,32(1):19-22. DOI： 10.3788/YJYXS20173201.0019.

Peng LI, Zheng-hao PIAO, Xi-zhe JIN, et al. Low storage capacitance pixel design of ADS mode[J]. Chinese journal of liquid crystals and displays, 2017, 32(1): 19-22. DOI： 10.3788/YJYXS20173201.0019.

摘要

高级超维场转换技术（Advanced Super Dimension Switch，简称ADS）是以宽视角技术为代表的核心技术统称，其显示模式过大的存储电容（

）成为限制Dual Gate GOA 4K TV应用的主要因素。在较短的充电时间内，像素为了维持相同的充电率，需要降低

。本文采用一种双条形电极ADS结构（Dual Slit ADS），其中像素电极与公共电极交叠区域形成ADS结构，像素电极与公共电极间隔区域形成共面转换（IPS）结构，通过减少像素电极与公共电极的交叠面积，起到降低ADS模式

的目的。模拟结果表明：当ADS显示模式采用Dual Slit ADS设计时，像素的

可以下降30%~40%。实验结果表明：采用Low Cst Pixel ADS设计时，VGH Margin可以增大2.5 V，但受到像素电极和公共电极的对位影响，透过率下降5%。

Abstract

Advanced Super Dimension Switch (ADS) is a type of wide view TFT-LCD technology and widely used in the commercial TV display in recent years. However

the high

(capacitance storage) of ADS technology is the main restriction on Dual Gate GOA 4K TV. In order to maintain the same charging rate in smaller charging time

the pixel needs to reduce the

. In this structure

the ADS structure is formed by the overlapping area between the pixel electrode and the common electrode

a coplanar conversion (IPS) structure is formed between the pixel electrode and the common electrode space. By reducing the pixel and common electrode overlap areas

the storage capacitor of ADS mode are decreased. The simulation results show that the pixel

can drop 30% to 40%

when the Dual Slit ADS Design is used in ADS mode. The experimental results show that using the Low Cst Pixel ADS design

VGH Margin can be increased 2.5 V

but affected by the pixel electrode and the common electrode counterpoint

the transmittance will drop 5%.

关键词

Keywords

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