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H2O2对溶液法制备a-IGZO薄膜光学特性的影响
Influence of hydrogen peroxide on optical properties of a-IGZO thin films by solution Process
- 液晶与显示 2016年31卷第12期 页码：1124-1130
- 作者机构：
江南大学 物联网工程学院, 江苏 无锡 214122
- 作者简介：
[ "汤猛(1992-), 男, 江苏徐州人, 硕士研究生, 主要研究方向为半导体器件物理、工艺、材料。E-mail:tangmeng1992@126.com" ]
钟传杰(1959-), 男, 江苏徐州人, 博士, 教授硕士生导师, 2002年于日本东北大学获得博士学位, 主要从事新型半导体器件、物理、有机电子学以及专用集成电路设计方向研究。E-mail: zhongchuanjie@jiangnan.edu.cn
- 基金信息：国家自然科学基金资助项目(60776056);Supported by National Natural Science Foundation of China(60776056)
DOI：10.3788/YJYXS20163112.1124
中图分类号： TM23收稿日期：2016-07-27，
录用日期：2016-10-19，
纸质出版日期：2016-12-05
- 稿件说明：
移动端阅览
汤猛, 李勇男, 殷波, 等. H2O2对溶液法制备a-IGZO薄膜光学特性的影响[J]. 液晶与显示, 2016,31(12):1124-1130.
Meng TANG, Yong-nan LI, Bo YIN, et al. Influence of hydrogen peroxide on optical properties of a-IGZO thin films by solution Process[J]. Chinese journal of liquid crystals and displays, 2016, 31(12): 1124-1130.
汤猛, 李勇男, 殷波, 等. H2O2对溶液法制备a-IGZO薄膜光学特性的影响[J]. 液晶与显示, 2016,31(12):1124-1130. DOI： 10.3788/YJYXS20163112.1124.
Meng TANG, Yong-nan LI, Bo YIN, et al. Influence of hydrogen peroxide on optical properties of a-IGZO thin films by solution Process[J]. Chinese journal of liquid crystals and displays, 2016, 31(12): 1124-1130. DOI： 10.3788/YJYXS20163112.1124.
摘要
基于溶液旋涂法和高压退火工艺制备了a-IGZO薄膜。采用椭圆偏振光谱分析仪以及原子力显微镜研究和分析了H
2
O
2
对薄膜的表面结构和光学特性的影响。实验结果表明，a-IGZO前驱液中不含H
2
O
2
的薄膜，退火温度从220℃升高到300℃，薄膜的光学带隙从3.03增加到3.29，而膜表面粗糙层由20.69 nm降至4.68 nm。在同样的高压退火条件处理下，与前驱液中没加入H
2
O
2
的薄膜相比，折射率显著增加并明显的降低了薄膜表面粗糙度。退火温度在300℃时，薄膜的光学带隙由3.29 eV增大到3.34 eV，表面粗糙层由4.68 nm减少到2.89 nm。因此，H
2
O
2
可以在相对低温条件下有效降低薄膜内部的有机物残留及微缺陷，形成更加致密的a-IGZO薄膜。证明了利用H
2
O
2
能够有效降低溶液法制备a-IGZO薄膜所需的退火温度。
Abstract
The a-IGZO films were fabricated by solution method and high-pressure annealing process
and the effects of H
2
O
2
on microstructural and optical properties of the a-IGZO films were studied by spectroscopic ellipsometry and atomic force microscope (AFM). Results indicated that when the annealing temperature was increased from 220℃ to 300℃
the optical band gap of the film was increased from 3.03 eV to 3.29 eV
the roughness was decreased from 20.69 nm to 4.68 nm.Compared to the film without H
2
O
2
the refractive of the film with H
2
O
2
was increased and the roughness was decreased obviously under the same high-pressure annealing process
the optical band gap of the film was increased from 3.29 eV to 3.34 eV
but the surface roughness was decreased from 4.68 nm to 2.89 nm at 300℃.Therefore
employing H
2
O
2
in the solution could effectively minimize organic chemical residues and pores at lower temperatures
as well as form more dense a-IGZO film. All experiment results indicated that H
2
O
2
could decrease the temperature of treatment when depositing a-IGZO films by solution method.
关键词
Keywords
references
HSU H H, CHANG C Y, CHENG C H, et al. Fully room-temperature IGZO thin film transistors adopting stacked gate dielectrics on flexible polycarbonate substrate[J].Solid-State Electronics, 2013, 89:194-197.
HOSONO H.Ionic amorphous oxide semiconductors:Material design, carrier transport, and device application[J].Journal of Non-Crystalline Solids, 2006, 352(9/20):851-858.
PARK J H, JEON K, LEE S, et al. Extraction of density of states in amorphous GaInZnO thin-film transistors by combining an optical charge pumping and capacitance-voltage characteristics[J].IEEE Electron Device Letters, 2008, 29(12):1292-1295.
刘冲, 韦敏, 杨帆, 等.电极材料对IGZO薄膜晶体管性能的影响[J].发光学报, 2014, 35(11):1365-1369.
LIU C, WEI M, YANG F, et al. Effects of electrode materials on the performances of IGZO-based thin film transistor[J].Chinese Journal of Luminescence, 2014, 35(11):1365-1369.(in Chinese)
陈龙龙, 张建华, 李喜峰, 等.基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J].液晶与显示, 2015, 30(5):796-800.
CHEN L L, ZHANG J H, LI X F, et al. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J].Chinese Journal of Liquid Crystals and Displays, 2015, 30(5):796-800.(in Chinese)
刘国柱, 夏都灵, 杨文君, 等.柔性显示的研究进展[J].材料导报, 2008, 22(6):111-115.
LIU G Z, XIA D L, YANG W J, et al. Research progress in flexible displays[J].Materials Review, 2008, 22(6):111-115.(in Chinese)
WANG Y, LIU S W, SUN X W, et al. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors[J].Journal of Sol-Gel Science and Technology, 2010, 55(3):322-327.
HWANG S, LEE J H, WOO C H, et al. Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors[J].Thin Solid Films, 2011, 519(15):5146-5149.
FURUTA M, KAWAHARAMURA T, WANG D P, et al. Electrical properties of the thin-film transistor with an Indium-Gallium-Zinc oxide channel and an aluminium oxide gate dielectric stack formed by solution-based atmospheric pressure deposition[J].IEEE Electron Device Letters, 2012, 33(6):851-853.
邹春辉, 张婷, 汤猛, 等.DUV辅助高压退火对a-IGZO薄膜微结构及光学特性的影响[J].固体电子学研究与进展, 2016, 36(2):165-170.
ZOU C H, ZHANG T, TANG M, et al. Effects of DUV-assisted high pressure annealing on microstructure and optical properties of a-IGZO thin films[J].Research & Progress of SSE, 2016, 36(2):165-170.(in Chinese)
马洪磊, 马瑾.透明氧化物半导体[M].北京:科学出版社, 2014.
MA H L, MA J.Transparent Oxide Semiconductor[M].Beijing:Science Press, 2014.(in Chinese)
SEO H, PARK C J, CHO Y J, et al. Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films[J].Applied Physics Letters, 2010, 96(4):232101.
WANG J P, WANG Z Y, HUANG B B, et al. Oxygen vacancy induced band-gap narrowing and enhanced visible light photocatalytic activity of ZnO[J].ACS Appl.Mater.Interfaces, 2012, 4(8):4024-4030.
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