电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述

陈思博; 王永超; 周璇; 张志东

doi:10.3788/YJYXS20163109.0853

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电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述

材料与器件 | 更新时间：2020-07-07

- 电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述
- Description about electric field-induced new order reconstruction in a nanoconfined HAN cell
- 液晶与显示 2016年31卷第9期页码：853-861
- 作者机构：
  
  河北工业大学理学院, 天津 300401
- 作者简介：
  
  [ "陈思博(1992-),男,河北廊坊人,硕士研究生,从事液晶物理方面的学习和研究。E-mail:chensibo1992@163.com" ]
  E-mail:zhidong_zhang1961@163.com
- 基金信息：
  
  国家自然科学基金(No.11374087);the Natural Science Foundation of China(No.11374087)
- DOI：10.3788/YJYXS20163109.0853
  中图分类号： O753.2
- 收稿日期：2016-04-06，
  
  录用日期：2016-5-23，
  
  纸质出版日期：2016-09
- 稿件说明：
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陈思博, 王永超, 周璇, 等. 电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述[J]. 液晶与显示, 2016,31(9):853-861.

Si-bo CHEN, Yong-chao WANG, Xuan ZHOU, et al. Description about electric field-induced new order reconstruction in a nanoconfined HAN cell[J]. Chinese journal of liquid crystals and displays, 2016, 31(9): 853-861.
陈思博, 王永超, 周璇, 等. 电场诱导纳米结构HAN液晶盒中新型有序重构过程的描述[J]. 液晶与显示, 2016,31(9):853-861. DOI： 10.3788/YJYXS20163109.0853.

Si-bo CHEN, Yong-chao WANG, Xuan ZHOU, et al. Description about electric field-induced new order reconstruction in a nanoconfined HAN cell[J]. Chinese journal of liquid crystals and displays, 2016, 31(9): 853-861. DOI： 10.3788/YJYXS20163109.0853.

摘要

基于Landau-de Gennes理论，利用松弛迭代的方法，研究了包含-1/2向错线的混合排列（HAN）液晶盒中，平行于向错线的电场所诱导的结构转变。结果表明，盒厚固定时，电场诱导五种结构转变过程；电场固定时，盒厚变化产生三类结构转变方式。力曲线上的极小值确定了液晶系统发生结构转变的临界盒厚。

Abstract

Based on the Landau-de Gennes theory

with the relaxation iterative method

we investigated the electric field-induced structure transition in a nanoconfined HAN cell with -1/2 topological defect

where the electric field is parallel to the disclination line. Our results show that with fixed cell gaps

five new structure transition processes are induced by electric field; while cell gap variation leads to three transition modes for an applied electric field. The critical value of cell gap corresponding to the structure transition is characterized by the local minimum in the force curve.

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references

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