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利用CsN3n型掺杂电子传输层改善OLED器件性能的研究
Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer
- 液晶与显示 2016年31卷第8期 页码：773-777
- 作者机构：
1.华侨大学 信息科学与工程学院, 福建 厦门 361021
2.厦门市移动多媒体通信重点实验室, 福建 厦门 361021
- 作者简介：
[ "于瑶瑶(1993-), 女, 山东淄博人, 硕士研究生, 2015年于曲阜师范大学信息科学与工程学院获理学学士学位, 主要从事有机电致发光器件的研究。E-mail:yuyaococo@163.com" ]
陈燕(1981-), 女, 福建泉州人, 讲师, 2003年于南京邮电学院电子信息工程系获工学学士学位, 2006年于北京大学信息科学技术学院获工学硕士学位。主要从事有机电致发光器件、有机光伏器件及有机薄膜晶体管方面研究。E-mail:goldency@hqu.edu.cn
- 基金信息：国家自然科学基金资助项目(61404053);National Natural Science Foundation of China(61404053)
DOI：10.3788/YJYXS20163108.0773
中图分类号： TN383.1;TN312.8收稿日期：2016-03-24，
录用日期：2016-6-8，
纸质出版日期：2016-08
- 稿件说明：
移动端阅览
于瑶瑶, 陈星明, 金玉, 等. 利用CsN3n型掺杂电子传输层改善OLED器件性能的研究[J]. 液晶与显示, 2016,31(8):773-777.
Yao-yao YU, Xing-ming CHEN, Yu JIN, et al. Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer[J]. Chinese journal of liquid crystals and displays, 2016, 31(8): 773-777.
于瑶瑶, 陈星明, 金玉, 等. 利用CsN3n型掺杂电子传输层改善OLED器件性能的研究[J]. 液晶与显示, 2016,31(8):773-777. DOI： 10.3788/YJYXS20163108.0773.
Yao-yao YU, Xing-ming CHEN, Yu JIN, et al. Improved properties of organic light-emitting devices by utilizing CsN3 n-type doped electron transport layer[J]. Chinese journal of liquid crystals and displays, 2016, 31(8): 773-777. DOI： 10.3788/YJYXS20163108.0773.
摘要
为了能够有效地提高电子的注入和传输能力，改善有机电致发光器件的性能，本文利用CsN
3
作为n型掺杂剂，对有机电子传输材料Bphen进行n型电学掺杂，制备了结构为ITO/MoO
3
（2 nm）/NPB（50 nm）/Alq
3
（30 nm）/Bphen（15 nm）/Bphen：CsN
3
（15 nm，
x
%，
x
=10，15，20）/Al（100 nm）的器件。实验结果表明，CsN
3
是一种有效的n型掺杂剂，以掺杂层Bphen：CsN
3
作为电子传输层，可以有效地降低电子的注入势垒，改善器件的电子注入和传输能力，从而降低器件的开启电压，同时提高了器件的亮度和发光效率。在掺杂浓度为10%时器件的性能最优，开启电压仅为2.3 V，在7.2 V的驱动电压下，达到最大亮度29 060 cd/m
2
，是非掺杂器件的2.5倍以上。当驱动电压为6.6 V时，达到最大电流效率3.27 cd/A。而当掺杂浓度进一步提高时，由于Cs扩散严重，发光区形成淬灭中心，造成器件的效率下降。
Abstract
To enhance the electron injecting and transporting ability and improve the performance of organic light-emitting device
the organic electron transport material Bphen was electrically doped by using CsN
3
as n-type dopant in this work. The devices of ITO/MoO
3
(2 nm)/NPB(50 nm)/Alq
3
(30 nm)/Bphen(15 nm)/Bphen:CsN
3
(15 nm
x
%
x
=10
15
20)/Al(100 nm) were prepared. The experimental results show that the CsN
3
is an effective n-type dopant. The electron injection barriers was reduced and the electron injecting and transporting ability of the device was enhanced by using the Bphen:CsN
3
doped electron transport layer. As a result
the turn-on voltage was decreased
and the brightness and the luminous efficiency of the device were improved.The optimal doping concentration of the device was 10%.The device shows a turn-on voltage of 2.3 V and the maximum luminance reaches 29 060 cd/m
2
at 7.2 V
more than 2.5 times of that of the device without doping. The maximum current efficiency was 3.27 cd/A when the voltage was 6.6 V.When the doping concentration further increases
the efficiency of the device is decreased owning to Cs atom quenching the luminescence center induced by interdiffusion.
关键词
Keywords
references
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