对向列相液晶反转壁中+1缺陷处挠曲电效应的理论分析

张辉; 郑桂丽; 田毅; 张志东

doi:10.3788/YJYXS20163108.0740

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对向列相液晶反转壁中+1缺陷处挠曲电效应的理论分析

材料与器件 | 更新时间：2020-07-07

- 对向列相液晶反转壁中+1缺陷处挠曲电效应的理论分析
- Theoretical analysis of the influence of flexoelectric effect on the +1 defect site in nematic inversion walls
- 液晶与显示 2016年31卷第8期页码：740-747
- 作者机构：
  
  1.河北工业大学电子信息工程学院, 天津 300401
  2.天津市电子材料与器件重点实验室, 天津 300401
  3.河北工业大学理学院, 天津 300401
- 作者简介：
  
  [ "张辉(1981-), 男, 河北石家庄人, 硕士, 实验师, 2007年于河北工业大学获得硕士学位, 现为河北工业大学理学院应用物理系实验师, 河北工业大学电子信息与工程学院在读博士研究生。主要从事液晶及液晶器件的理论及相关方面的研究。E-mail: cmh_lj@163.com" ]
  张志东(1961-), 男, 山东蓬莱人, 教授, 主要研究方向为液晶物理及液晶器件物理。E-mail:zhidong_zhang1961@163.com
- 基金信息：
  
  国家自然科学基金(11374087);国家自然科学基金(11304074);河北省自然科学基金(A2014202123);河北省自然科学基金(A2016202282);大学生创新创业训练计划项目(QN2014130);河北省高等学校科学技术研究青年基金(QN2015260);河北省高校重点学科资助;the National Natural Science Foundation of China(11374087);the National Natural Science Foundation of China(11304074);Natural Science Foundation of Hebei Province(A2014202123);Natural Science Foundation of Hebei Province(A2016202282);Research Project of Hebei Education Department(QN2014130);Research Project of Hebei Education Department, China(QN2015260);Key Subject Construction Project of Hebei Province University
- DOI：10.3788/YJYXS20163108.0740
  中图分类号： O753+.2
- 收稿日期：2016-03-25，
  
  录用日期：2016-5-11，
  
  纸质出版日期：2016-08
- 稿件说明：
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张辉, 郑桂丽, 田毅, 等. 对向列相液晶反转壁中+1缺陷处挠曲电效应的理论分析[J]. 液晶与显示, 2016,31(8):740-747.

Hui ZHANG, Gui-li ZHENG, Yi TIAN, et al. Theoretical analysis of the influence of flexoelectric effect on the +1 defect site in nematic inversion walls[J]. Chinese journal of liquid crystals and displays, 2016, 31(8): 740-747.
张辉, 郑桂丽, 田毅, 等. 对向列相液晶反转壁中+1缺陷处挠曲电效应的理论分析[J]. 液晶与显示, 2016,31(8):740-747. DOI： 10.3788/YJYXS20163108.0740.

Hui ZHANG, Gui-li ZHENG, Yi TIAN, et al. Theoretical analysis of the influence of flexoelectric effect on the +1 defect site in nematic inversion walls[J]. Chinese journal of liquid crystals and displays, 2016, 31(8): 740-747. DOI： 10.3788/YJYXS20163108.0740.

摘要

基于Pramoda Kumar等人文章中关于向列相液晶反转壁中+1缺陷处挠曲电效应的实验现象，我们利用Landau-de Gennes理论给出相应的理论分析。当对弱锚定的平行排列向列相液晶盒施加垂直基板的直流电压，在反转壁中的±1缺陷会发生旋转。对于其中的+1缺陷，我们给出了外加电场作用下液晶分子的自由能表达式并通过模拟描述指向矢的方位角和极角的变化情况给出相应的缺陷处电场驱动的结构变化。模拟结果给出的挠曲电效应引起的方位角的变化角度与Pramoda Kumar等人的实验得到的在+1缺陷处消光刷的变化情况是一致的。

Abstract

Based on the experimental phenomena of flexoelectric response at defect sites in nematic inversion walls conducted by Pramoda Kumar

et al

we gave the theoretical analysis using the Landau-de Gennes theory. When a direct-current electric field normal to the plane of substrate is applied to the parallel aligned nematic liquid crystal cell with weak anchoring

the rotation of ±1 defects in the narrow inversion walls can be exhibited. The free energy of liquid crystal molecules around the +1 defect site was formulated and the electric field driven structural changes at the defect site characterized by polar and azimuthal angles of the local director were simulated. The results reveal that the deviation of azimuthal angle induced by flexoelectric effect are consistent with the switching of extinction brushes at the +1 defect obtained in the experiment conducted by Pramoda Kumar

et al

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references

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