氧分压对铟镓锌氧薄膜晶体管性能影响

孙建明; 周婷婷; 任庆荣; 胡合合; 陈宁; 宁策; 王路; 刘文渠; 李东升

doi:10.3788/YJYXS20163106.0558

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氧分压对铟镓锌氧薄膜晶体管性能影响

材料与器件 | 更新时间：2020-08-12

- 氧分压对铟镓锌氧薄膜晶体管性能影响
- Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor
- 液晶与显示 2016年31卷第6期页码：558-562
- 作者机构：
  
  京东方科技集团股份有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163106.0558
  中图分类号： TNT21.5
- 收稿日期：2016-01-15，
  
  修回日期：2016-02-10，
  
  纸质出版日期：2016-06-05
- 稿件说明：
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孙建明, 周婷婷, 任庆荣等. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016,31(6): 558-562

SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong etc. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. , 2016,31(6): 558-562
孙建明, 周婷婷, 任庆荣等. 氧分压对铟镓锌氧薄膜晶体管性能影响[J]. 液晶与显示, 2016,31(6): 558-562 DOI： 10.3788/YJYXS20163106.0558.

SUN Jian-ming, ZHOU Ting-ting, REN Qing-rong etc. Effect of oxygen partial pressure on the performance of indium gallium zinc oxide thin film transistor[J]. , 2016,31(6): 558-562 DOI： 10.3788/YJYXS20163106.0558.

摘要

采用标准的液晶显示屏基板制备工艺制备出铟镓锌氧薄膜晶体管(IGZO-TFT)

通过调节IGZO薄膜工艺中氧分压

研究不同氧分压对TFT器件电学性能的影响。实验结果表明

所有器件都展现出良好的电学特性

随着氧分压从10%增加到50%

TFT的阈值电压由0.5 V增加到2.2 V

而亚阈值摆幅没有发生变化。在栅极施加30 V偏压3600 s后

随着氧分压的增加

阈值电压向正向的漂移量由1 V增加到9 V。经过分析得出高氧分压的IGZO-TFT器件中载流子浓度低

建立相同导电能力的沟道时所需要栅极电压会更大

阈值电压会增加。而在金属-绝缘层-半导体(MIS)结构中低载流子浓度会导致有源层能带弯曲的部分包含更多与电子陷阱相同的能态

栅介质层(GI)会俘获更多的电子

造成阈值电压漂移量较大的现象。

Abstract

Indium gallium zinc oxide thin film transistors (IGZO-TFT) were fabricated with the standard process of TFT-LCD arrays substrate.The effects of different oxygen partial pressure on IGZO-TFT performance were investigated by adjusting the oxygen partial pressure in IGZO film process. All devices showed good electrical properties.The threshold voltage of TFT was increased from 0.5 V to 2.2 V as the oxygen partial pressure was increased from 10% to 50%

whereas the sub-threshold swing had not changed. Applying a positive gate bias of 30 V for 3600 s

with the increase of the oxygen partial pressure

the positive shift of threshold voltage of IGZO-TFT was increased from 1 V to 9 V. The carrier concentration in TFT with higher oxygen partial pressure is lower. So it requires higher gate voltage for building the channel with the same conductive capability

and therefore the threshold voltage will be higher. In the Metal-Insulator-Semiconductor (MIS) structure

the lower carrier concentration leads electron accumulation layer to be thicker. There will be more energy states in band bending part of active layer which are the same as electron traps of gate insulator (GI). Consequently

it is possible that more electrons are captured by GI

and shift of threshold voltage will be greater.

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references

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