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原子层沉积方法制备低温多层Al2O3/TiO2复合封装薄膜的研究
Low-temperature multi-layer Al2O3/TiO2 composite encapsulation thin film by atomic layer deposition
- 液晶与显示 2016年31卷第6期 页码：532-539
- 作者机构：
1. 华南理工大学 材料科学与工程学院,广东 广州,510641
2. 创维液晶器件(深圳)有限公司,广东 深圳,518108
- 作者简介：
- 基金信息：深圳市技术攻关计划(No.JSGG20150331171053333)();广州市平板显示行业工程技术研究中心资助项目(No.2060502)()
DOI：10.3788/YJYXS20163106.0532
中图分类号： TN383+.1收稿日期：2016-01-12，
修回日期：2016-02-10，
纸质出版日期：2016-06-05
- 稿件说明：
移动端阅览
周忠伟, 李民, 徐苗等. 原子层沉积方法制备低温多层Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>复合封装薄膜的研究[J]. 液晶与显示, 2016,31(6): 532-539
ZHOU Zhong-wei, LI Min, XU Miao etc. Low-temperature multi-layer Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> composite encapsulation thin film by atomic layer deposition[J]. , 2016,31(6): 532-539
周忠伟, 李民, 徐苗等. 原子层沉积方法制备低温多层Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>复合封装薄膜的研究[J]. 液晶与显示, 2016,31(6): 532-539 DOI： 10.3788/YJYXS20163106.0532.
ZHOU Zhong-wei, LI Min, XU Miao etc. Low-temperature multi-layer Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> composite encapsulation thin film by atomic layer deposition[J]. , 2016,31(6): 532-539 DOI： 10.3788/YJYXS20163106.0532.
摘要
原子层沉积(ALD)方法可以制备出高质量薄膜
被认为是可应用于柔性有机电致发光器件(OLED)最有发展前景的薄膜封装技术之一。本文采用原子层沉积(ALD)技术
在低温(80℃)下
研究了Al
2
O
3
及TiO
2
薄膜的生长规律
通过钙膜水汽透过率(WVTR)、薄膜接触角测试等手段
研究了不同堆叠结构的多层Al
2
O
3
/TiO
2
复合封装薄膜的水汽阻隔特性
其中5 nm/5 nm8 dyads(重复堆叠次数)的Al
2
O
3
/TiO
2
叠层结构薄膜的WVTR达到2.110
-5
g/m
2
/day。采用优化后的Al
2
O
3
/TiO
2
叠层结构薄膜对OLED器件进行封装
实验发现封装后的OLED器件在高温高湿条件下展现了较好的寿命特性。
Abstract
Atomic layer deposition (ALD) is considered as one of the most promising thin-film encapsulation technologies for flexible organic light-emitting diode (OLED) device because of high-quality films formed. In this work
different laminated structures of Al
2
O
3
/TiO
2
composite film were prepared at low temperature (80℃) by ALD method. The growth mechanism of Al
2
O
3
and TiO
2
film was studied. The water vapor barrier properties of the different stacked structures of composite Al
2
O
3
/TiO
2
thin film were studied by the calcium film
which were analyzed by water vapor transmission rate (WVTR) test and contact angle measurements. The WVTR of the 5 nm/5 nm8 dyads Al
2
O
3
/TiO
2
composite thin film was 2.110
-5
g/m
2
/day and the OLED devices encapsulated by this optimized Al
2
O
3
/TiO
2
structure exhibited better lifetime characteristics in high temperature and high humidity test.
关键词
Keywords
references
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