非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究

吴崎; 许玲; 董承远

doi:10.3788/YJYXS20163104.0375

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非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究

材料与器件 | 更新时间：2020-08-12

- 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究
- Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors
- 液晶与显示 2016年31卷第4期页码：375-379
- 作者机构：
  
  上海交通大学电子工程系TFT-LCD关键材料及技术国家工程实验室上海,200240
- 作者简介：
- 基金信息：
  
  国家自然科学基金面上项目(No.61474075)();国家自然科学基金重点项目(No.61136004)()
- DOI：10.3788/YJYXS20163104.0375
  中图分类号： TN321+.5
- 收稿日期：2015-12-17，
  
  修回日期：2015-12-31，
  
  纸质出版日期：2016-04-05
- 稿件说明：
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吴崎, 许玲, 董承远. 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究[J]. 液晶与显示, 2016,31(4): 375-379

WU Qi, XU Ling, DONG Cheng-yuan. Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors[J]. , 2016,31(4): 375-379
吴崎, 许玲, 董承远. 非晶铟镓锌氧薄膜晶体管银/钛源漏电极的研究[J]. 液晶与显示, 2016,31(4): 375-379 DOI： 10.3788/YJYXS20163104.0375.

WU Qi, XU Ling, DONG Cheng-yuan. Ag/Ti source/drain electrodes for amorphous InGaZnO thin flim transistors[J]. , 2016,31(4): 375-379 DOI： 10.3788/YJYXS20163104.0375.

摘要

为了适应大尺寸高分辨率显示的技术需求

研究并开发用于非晶铟镓锌氧(a-IGZO)薄膜晶体管(TFT)阵列的低电阻电极非常关键。本文采用磁控溅射制备的金属银为源漏电极

设计并制作了底栅结构的a-IGZO TFT器件。实验发现

具有单层银源漏电极的器件电学特性较差

这是因为银与a-IGZO之间不能形成良好的欧姆接触。另一方面

通过增加钛中间层而形成的Ag/Ti电极在保持低电阻的同时能够有效阻止银原子扩散并与a-IGZO形成较好的接触状态。最终制备的以Ag/Ti为源漏电极的a-IGZO TFT具有明显改善的电学特性

场效应迁移率为1.73 cm

/Vs

亚阈值摆幅2.8 V/()

开关比为210

由此证明了磁控溅射制备的银电极具有应用于非晶氧化物薄膜晶体管的实际潜力。

Abstract

With the increasing requirements from large-size and high-resolution flat panel displays (FPDs)

it is necessary to investigate and develop the low-resistance electrodes for amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this study

the inverted staggered a-IGZO TFTs using Ag as source/drain (S/D) electrodes were designed and fabricated by magnetron sputtering. It was found that the a-IGZO TFTs with single-layer Ag S/D electrodes exhibited poor performance due to the bad contact between Ag and a-IGZO. On the other hand

the Ag/Ti electrodes

formed by inserting a Ti film between Ag and a-IGZO

could effectively prevent Ag diffusion and form good contact with the active layers. In fact

the a-IGZO TFTs with Ag/Ti electrodes showed much better performance (field effect mobility of 1.73 cm

/Vs

subthreshold swing of 2.8 V/()

and on-off current ratio of 210

) than those of the a-IGZO TFTs with single-layer Ag source/drain electrodes

proving that Ag electrodes could be potentially used in amorphous oxide TFTs.

关键词

Keywords

references

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