TFT制程中高厚度ITO残留因素的研究

王灿; 陈宁; 刘英伟; 赵磊; 薛大鹏; 杜建华; 郭炜; 王路

doi:10.3788/YJYXS20163103.0276

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TFT制程中高厚度ITO残留因素的研究

材料与器件 | 更新时间：2020-08-12

- TFT制程中高厚度ITO残留因素的研究
- Influence factors of high thickness ITO residual in TFT process
- 液晶与显示 2016年31卷第3期页码：276-282
- 作者机构：
  
  京东方科技集团股份有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163103.0276
  中图分类号： TN141.9
- 收稿日期：2015-08-05，
  
  修回日期：2015-09-11，
  
  网络出版日期：2015-11-19，
  
  纸质出版日期：2016-03-05
- 稿件说明：
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王灿, 陈宁, 刘英伟等. TFT制程中高厚度ITO残留因素的研究[J]. 液晶与显示, 2016,31(3): 276-282

WANG Can, CHEN Ning, LIU Ying-wei etc. Influence factors of high thickness ITO residual in TFT process[J]. , 2016,31(3): 276-282
王灿, 陈宁, 刘英伟等. TFT制程中高厚度ITO残留因素的研究[J]. 液晶与显示, 2016,31(3): 276-282 DOI： 10.3788/YJYXS20163103.0276.

WANG Can, CHEN Ning, LIU Ying-wei etc. Influence factors of high thickness ITO residual in TFT process[J]. , 2016,31(3): 276-282 DOI： 10.3788/YJYXS20163103.0276.

摘要

氧化铟锡(ITO)是薄膜晶体管工艺中最常用的透明导电薄膜

随着OLED技术的发展

ITO作为透明阳极材料也被广泛应用。在高厚度(尤其是大于70 nm)非晶ITO工艺过程中

由于多种因素的影响

很容易产生残留

发生残留后会严重影响产品质量和项目进度。本文通过多次实验测试

综合多种不同厚度

尤其是针对高厚度非晶ITO

分析了TFT制程中影响残留的多种因素

考察重点因素及影响规律

有效地修正工艺条件

为之后的项目和生产过程提供了很好的参考价值。

Abstract

ITO(Indium Tin Oxide) is the most common transparent conductive film in the process of TFT(Thin Film Transistor). With the development of OLED

ITO has been widely used as the transparent anode. Due to various factors

the a-ITO film which thickness is more than 70 nm is easy to make residues during wet etch process. The residues seriously affect the product quality and project schedule. Based on many different thickness test

the factors of affecting residues was analyzed in the technical process. At the same time

the key factors and influence laws were found out. The result can be a good reference for the future technical process experiment.

关键词

Keywords

references

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