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1. 长春工业大学 化学工程学院,吉林 长春,130012
2. 长春理工大学 理学院,吉林 长春,130022
收稿日期:2015-05-16,
修回日期:2015-07-11,
网络出版日期:2015-09-08,
纸质出版日期:2016-02-05
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李亨利, 都昊, 王丽娟等. 异质诱导生长的酞菁铜薄膜晶体管的研究[J]. 液晶与显示, 2016,31(2): 157-163
LI Heng-li, DU Hao, WANG Li-juan etc. Research of copper phthalocyanine thin film transistor by heterogeneous induced growth[J]. , 2016,31(2): 157-163
李亨利, 都昊, 王丽娟等. 异质诱导生长的酞菁铜薄膜晶体管的研究[J]. 液晶与显示, 2016,31(2): 157-163 DOI: 10.3788/YJYXS20163102.0157.
LI Heng-li, DU Hao, WANG Li-juan etc. Research of copper phthalocyanine thin film transistor by heterogeneous induced growth[J]. , 2016,31(2): 157-163 DOI: 10.3788/YJYXS20163102.0157.
因酞菁薄膜平面具有多电子共轭大键结构
本文采用异质诱导的方式对酞菁薄膜的生长特性进行了改善研究。采用高掺杂硅为栅极
氧化硅为绝缘层
生长-四噻吩或p-六联苯薄膜为异质诱导层
制备了酞菁铜有机薄膜晶体管。利用原子力显微镜研究薄膜生长特性
并对比研究了2种诱导层对薄膜晶体管性能的影响。实验结果表明:-四噻吩上生长的酞菁铜薄膜
形貌呈片状
而p-六联苯上生长的酞菁铜薄膜
形貌呈针状
均与单层酞菁铜棒状形貌不同。同时
-四噻吩与p-六联苯薄膜上生长酞菁铜后
两者晶体管电性能都有不同程度的提高
均比单层酞菁铜提高了1~2个数量级
表明-四噻吩或p-六联苯对酞菁铜薄膜均有诱导效应
可以获得高性能的有机薄膜晶体管。
The growth characteristics of phthalocyanine thin films were investigated by the method of heterogeneous induction due to planar electron conjugated bond structure of phthalocyanine thin film. Copper phthalocyanine organic thin film transistors were fabricated
which consist of high-doped silicon as the gate
the oxide silicon as the insulating layer
and the growth of -tetrathiophene or para-hexaphenyl thin film as heterogeneous layer. The growth characteristics of the films were studied by atomic force microscopy. And the effect of two kinds of inducting layers on the properties of thin film transistors was contrastively investigated. The experimental results showed that copper phthalocyanine thin films grown on -tetrathiophene were lamella morphology
and the copper phthalocyanine thin films grown on para-hexaphenyl were needle morphology
and they were different from rod shape of monolayer copper phthalocyanine. At the same time
the electric properties of two transistors were improved by the growth of copper phthalocyanine on -tetrathiophene or para-hexaphenyl films
which were one or two orders of magnitude higher than the monolayer copper phthalocyanine. It was confirmed that the -tetrathiophene and para-hexaphenyl films had induction effect on copper phthalocyanine thin films
and organic thin film transistor with high performance could be obtained.
BAEG K J, CAIRONI M, NOH Y Y. Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors [J]. Advanced Materials, 2013, 25(31): 4210-4244.
WANG M, LI J, ZHAO G Y, et al. High-performance organic field-effect transistors based on single and large-area aligned crystalline microribbons of 6, 13-dichloropentacene [J]. Advanced Materials, 2013, 25(15): 2229-2233.
LIU Q, LI Y, WANG X H, et al. Enhancing charge transport in copper phthalocyanine thin film by elevating pressure of deposition chamber [J]. Organic Electronics, 2014, 15(8): 1799-1804.
林广庆,李鹏,王明晖,等.表面修饰制备高性能薄膜晶体管[J].液晶与显示,2013,28(4):490-494. LIN G Q, LI P, WANG M H, et al. Preparation of high-performance organic thin-film transistor through surface modification [J]. Chinese Journal of Liquid Crystals and Displays, 2013, 28(4): 490-494. (in Chinese)
WANG H B, SONG D, YANG J L, et al. High mobility vanadyl-phthalocyanine polycrystalline films for organic field-effect transistors [J]. Applied Physics Letters, 2007, 90(25): 253510.
刘欢,余屯,丘禹,等.Tips-Pentacene OTFT电极接触电阻的研究[J].液晶与显示,2013,28(2):210-214. LIU H, YU T, QIU Y, et al. Contact resistance of electrodes in tips-pentacene OTFTs [J]. Chinese Journal of Liquid Crystals and Displays, 2013, 28(2): 210-214. (in Chinese)
CHANG H, LI W L, TIAN H K, et al. High performance of rubrene thin film transistor by weak epitaxy growth method [J]. Organic Electronics, 2015, 20: 43-48.
YANG J, WANG T, WANG H, et al. Weak epitaxy growth of metal-free phthalocyanine on p-sexiphenyl monolayer and double-layer films [J]. The Journal of Physical Chemistry B, 2008, 112(10): 3132-3137.
WANG L J, LI Y P, SONG X F, et al. Improved interfacial and electrical properties of vanadyl-phthalocyanine metal-insulator-semiconductor devices with silicon nitride as gate insulator [J]. Applied Physics Letters, 2013, 103(24): 243302.
RAIMONDO L, FUMAGALLI E, MORET M, et al. Epitaxial interfaces in rubrene thin film heterostructures [J]. The Journal of Physical Chemistry C, 2013, 117(27): 13981-13988.
SIEGRIST B T, KLOC C, LAUDISE R A, et al. Crystal growth, structure, and electronic band structure of -4T polymorphs [J]. Advanced Materials, 1998, 10(5): 379-382.
YANG J L, WANG T, WANG H B, et al. Ultrathin-film growth of para-sexiphenyl (I): submonolayer thin-film growth as a function of the substrate temperature [J]. Journal of Physical Chemistry B, 2008, 112(26): 7816-7820.
王海波,闫东航.结晶性有机半导体异质结器件[J].中国科学B辑:化学,2009,39(1):1-21. WANG H B, YAN D H. Crystalline organic semiconductor heterojunction device[J]. Science China, 2009, 39(1): 1-21. (in Chinese)
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