湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究

范学丽; 靖瑞宽; 翁超; 陈启省; 王晏酩; 肖红玺; 刘还平

doi:10.3788/YJYXS20163101.0067

您当前的位置：

首页 >

文章列表页 >

湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究

材料与器件 | 更新时间：2020-08-12

- 湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究
- Improvement of etching uniformity and influence factors of wet etching of FI CD uniformity
- 液晶与显示 2016年31卷第1期页码：67-73
- 作者机构：
  
  北京京东方光电科技有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20163101.0067
  中图分类号：
- 收稿日期：2015-06-05，
  
  修回日期：2015-07-22，
  
  纸质出版日期：2016-01-05
- 稿件说明：
移动端阅览
范学丽, 靖瑞宽, 翁超等. 湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究[J]. 液晶与显示, 2016,31(1): 67-73

FAN Xue-li, JING Rui-kuan, WENG Chao etc. Improvement of etching uniformity and influence factors of wet etching of FI CD uniformity[J]. , 2016,31(1): 67-73
范学丽, 靖瑞宽, 翁超等. 湿法刻蚀FI CD均一性的影响因素及提高刻蚀均一性的研究[J]. 液晶与显示, 2016,31(1): 67-73 DOI： 10.3788/YJYXS20163101.0067.

FAN Xue-li, JING Rui-kuan, WENG Chao etc. Improvement of etching uniformity and influence factors of wet etching of FI CD uniformity[J]. , 2016,31(1): 67-73 DOI： 10.3788/YJYXS20163101.0067.

摘要

随着高分辨率产品导入

TFT-LCD阵列段各项参数范围越来越小

工艺要求更为严格

为了更好地管控湿法刻蚀各项参数

本文以湿法刻蚀FI CD(Final Inspection Critical Dimension)均一性的影响因素及如何提高FI CD均一性为目的进行研究。首先

通过对湿法刻蚀设备参数(主要包括刻蚀液温度、流量、压力、浓度、Nozzle Sliding、Oscillation Speed、刻蚀时间等)进行试验

验证各项参数对FI CD均一性的影响。其次

对沉积工序、曝光工序以及产品设计等进行试验

获悉影响因素并进行改善。通过对湿法刻蚀设备自身参数的调整

如减少设备温度、流量、压力波动

使参数保持相对稳定状态

可有效改善湿法刻蚀FI CD均一性

FI CD的均一性可从1.0降低至0.5。通过对湿法刻蚀设备参数进行试验并做相应调整

湿法刻蚀FI CD均一性改善效果显著。

Abstract

With the gradual introduction of high resolution products

the process parameter margin of TFT-LCD array is getting stricter. In order to control the wet etching parameters better

the influence factors of wet etching FI CD uniformity and how to improve the uniformity of wet etching are studied. Firstly

we study and testify the influence of parameters of wet etching equipment on uniformity

including the etching temperature

flowrate

pressure

concentration

Nozzle Sliding

Oscillation Speed

etching time

etc. Secondly

we study how the deposition process

exposure procedure and product design may affect the uniformity and try to improve them. Research result shows that a stable parameter can significantly help the etch uniformity. By stabilizing the parameters of temperature

flowrate and pressure

the uniformity of FICD has decrease from 1.0 to 0.5. Testing and adjusting the parameters of wet etching equipment accordingly can effectively improve the etching uniformity and improve the effect significantly.

关键词

Keywords

references

张定涛,李文彬,姚立红,等.大尺寸TFT-LCD ECCP刻蚀工艺低耗整合[J].液晶与显示,2014,29(1):7-14. ZHANG D T, LI W B, YAO L H, et al. Low consumption combination of large-sized TFT-LCD ECCP etch process[J]. Chinese Journal of Liquid Crystals and Display, 2014, 29(1):7-14. (in Chinese)

曲连杰,郭建,史大为,等.高分辨率显示用小孔设计技术[J].液晶与显示,2015,30(2):246-250. QU L J, GUO J, SHI D W, et al. Tiny hole design for high resolution display[J]. Chinese Journal of Liquid Crystals and Display, 2015, 30(2):246-250. (in Chinese)

谷至华.薄膜晶体管(TFT)阵列制造技术[M].上海:复旦大学出版社,2007. GU Z H. Thin Film Transistor (TFT) Array Manufacturing Technology[M]. Shanghai:Fudan University Press, 2007. (in Chinese)

王伟,向东,杨为,等.湿法刻蚀腔室结构数值优化[J].人工晶体学报,2014,43(5):1110-1114. WANG W, XIANG D, YANG W, et al. Numerical optimization of a chamber structure design for the wet etching[J]. Journal of Synthetic Crystals, 2014, 43(5):1110-1114. (in Chinese)

毕昕.面向TFT-LCD制程的Mura缺陷机器视觉检测方法研究[D].上海:上海交通大学,2009. BI X. Study on the methods of machine vision inspection for the mura defect of TFT-LCD process[D]. Shanghai:Shanghai Jiao Tong University, 2009. (in Chinese)

翟莲娜,周化岚,李小慧,等.氧化铟锡透明导电电极的刻蚀研究[J].腐蚀科学与防护技术,2014,26(1):41-44. ZHAI L N, ZHOU H L, LI X H, et al. Etching of transparent and conductive indium tin oxide films[J]. Corrosion Science and Protection Technology, 2014, 26(1):41-44. (in Chinese)

荀本鹤.大尺寸面板液晶显示屏阵列工艺中的金属钼刻蚀研究[D].成都:电子科技大学,2007. XUN B H. Large size liquid crystal display panel array of molybdenum metal etching research[D]. Chengdu:University of Electronic Science and Technology[D]. Chengdu:University of Electronic Science and Technology of China, 2007. (in Chinese)

于斌斌,袁军堂,汪振华,等.多层等离子体蚀刻技术的研究[J].真空科学与技术学报,2013,33(3):262-266. YU B B, YUAN J T, WANG Z H, et al. Novel technique for multi-partitioned plasma etching[J]. Chinese Journal of Vacuum Science and Technology, 2013, 33(3):262-266. (in Chinese)

孙敏,张金凤,郑佳晶.遗传算法在湿法刻蚀设备温度PID控制中的应用[J].电子工业专用设备,2014(1):36-39. SUN M, ZHANG J F, ZHENG J J. Genetic algorithm in the wet etching equipment temperature control[J]. Equipment for Electronic Products Manufacturing, 2014(1):31-34. (in Chinese)

李玉胜.湿法刻蚀与清洗中晶圆缺陷问题的研究[D].天津:天津大学,2013. LI Y S. Wafer defects issue study in wet etch and wet clean[D]. Tianjin:Tianjin University, 2013. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

TFT-LCD表面Mura缺陷的AOI检测研究进展

TFT-LCD用黑色光刻胶材料对曝光过程Mark读取的影响

TFT-LCD中电容对公共电压的影响

基于有效背景重构和对比度增强的Mura缺陷检测

TFT-LCD一种绿Mura机理分析和改善