Bphen掺杂Cs2CO3作为电子传输层对OLED器件性能的影响

胡俊涛; 程群; 余承东; 杨劲松; 梅文娟; 陆红波; 王洁然

doi:10.3788/YJYXS20153006.0943

您当前的位置：

首页 >

文章列表页 >

Bphen掺杂Cs₂CO₃作为电子传输层对OLED器件性能的影响

器件物理及器件制备技术 | 更新时间：2020-08-12

- Bphen掺杂Cs₂CO₃作为电子传输层对OLED器件性能的影响
- Impact of Bphen doping Cs₂CO₃ as electron transport layer on the performance of OLEDs
- 液晶与显示 2015年30卷第6期页码：943-948
- 作者机构：
  
  1. 合肥工业大学仪器科学与光电工程学院, 安徽合肥 230009
  2. 特种显示技术教育部重点实验室, 特种显示技术国家工程实验室, 现代显示技术省部共建国家重点实验室培育基地, 安徽合肥 230009
  3. 合肥工业大学光电技术研究院, 安徽合肥 230009
  4. 安徽华能电缆集团有限公司, 安徽无为 238371
- 作者简介：
- 基金信息：
  
  国家高技术研究发展计划(863计划)(No.2012AA011901)();科技部973计划前研专项(No.2012CB723406)();国家自然科学基金(No.21
- DOI：10.3788/YJYXS20153006.0943
  中图分类号： TN383+.1
- 收稿日期：2015-03-31，
  
  修回日期：2015-06-22，
  
  纸质出版日期：2015-12-05
- 稿件说明：
移动端阅览
胡俊涛, 程群, 余承东等. Bphen掺杂Cs2CO3作为电子传输层对OLED器件性能的影响[J]. 液晶与显示, 2015,30(6): 943-948

HU Jun-tao, CHENG Qun, YU Cheng-dong etc. Impact of Bphen doping Cs2CO3 as electron transport layer on the performance of OLEDs[J]. , 2015,30(6): 943-948
胡俊涛, 程群, 余承东等. Bphen掺杂Cs2CO3作为电子传输层对OLED器件性能的影响[J]. 液晶与显示, 2015,30(6): 943-948 DOI： 10.3788/YJYXS20153006.0943.

HU Jun-tao, CHENG Qun, YU Cheng-dong etc. Impact of Bphen doping Cs2CO3 as electron transport layer on the performance of OLEDs[J]. , 2015,30(6): 943-948 DOI： 10.3788/YJYXS20153006.0943.

摘要

为改善OLED器件的载子注入平衡

本文在其结构ITO/MoO

/NPB/Alq

/Cs

/Al中

分别引入高电子迁移率材料Bphen及Bphen:Cs

作为电子传输层。通过改变Bphen的厚度以及Bphen中Cs

的体积掺杂浓度

研究其对器件发光亮度、电流密度和效率等性能的影响。实验结果表明

采用Bphen或者Bphen:Cs

作为电子传输层

均能提高器件的电子注入能力

改善器件的性能。相比于未引入Bphen的器件

采用25 nm的Bphen作为电子传输层

改善了器件的电子注入

使器件的最大电流效率提高112%;采用体积掺杂浓度为15%

厚度为5 nm的Bphen:Cs

作为电子传输层

减小了电子注入势垒

使器件的最大电流效率提高27%

并且掺杂层厚度的改变对器件的电子注入影响很小。该方法可用于OLED器件的阴极修饰

对器件性能的提升将起到一定的促进作用。

Abstract

In order to improve the balance of carrier injection

a high electron mobility material Bphen and Bphen:Cs

are introduced in OLED devices respectively based on the structure of ITO/MoO

/NPB/Alq

/Cs

/Al. The experiments study the effect of Bphen and Bphen doping Cs

on the OLED devices of luminescence brightness

current density and efficiency by changing the thickness of Bphen and the volume concentration of Cs

doped in Bphen. Experimental results show that Bphen or Bphen:Cs

used as electron transport layer both can improve electronic injection and the performance of devices. Compared with the devices without Bphen

adding 25 nm thickness Bphen as electron transport layer can improve the device of electron injection

which increase the maximum current efficiency by 112%.Adding 5 nm thickness Bphen:Cs

(15% volume concentration doped) as electron transport layer can reduce the electron injection barrier

which increase the maximum current efficiency by 27%. However

changing the doping layer thickness has little impact on the device's electron injection. This method can be used in cathode decorate of OLED devices and play a certain role in promoting the devices' performance.

关键词

Keywords

references

Hfle S, Do H, Mankel E, et al. Molybdenum oxide anode buffer layers for solution processed, blue phosphorescent small molecule organic light emitting diodes[J]. Organic Electronics, 2013, 14(7):1820-1824.

QuB, Gao Z, Yang H S, et al. Calcium chloride electron injection/extraction layers in organic electronic devices[J]. Applied Physics Letters, 2014, 104(4):043305.

席俭飞,张方辉,马颖,等.钙铝合金作为阴极对OLED器件性能的影响[J].液晶与显示, 2010,25(3):356-359. Xi J F, Zhang F H, Ma Y, et al. Effects of Ca:Al alloy as cathode on the performance of organic light-emitting devices[J]. Chinese Journal of Liquid Crystals and Displays,010, 25(3):356-359. (in Chinese)

陈金鑫,黄孝文. OLED梦幻显示器--材料与器件[M].北京:人民邮电出版社,2011. Chen J X, Huang X W. Fantastic OLED Display-Materials and Devices[M]. Peking:Posts and Telecom Press, 2011. (in Chinese)

Wei H X, Ou Q D, Zhang Z, et al. The role of cesium fluoride as an n-type dopant on electron transport layer in organic light-emitting diodes[J]. Organic Electronics, 2013, 14(3):839-844.

Deng Y H, Li Y Q, Ou Q D, et al. The doping effect of cesium-based compounds on carrier transport and operational stability in organic light-emitting diodes[J]. Organic Electronics, 2014, 15(6):1215-1221.

Huh D H, Kim G W, Kim G H, et al. High hole mobility hole transport material for organic light-emitting devices[J]. Synthetic Metals, 2013, 180:79-84.

Khan M A, Xu W, Wei F X, et al. Highly efficient organic electroluminescent diodes realized by efficientcharge balance with optimized electron and hole transport layers[J]. Solid State Communications, 2007, 144(7/8):343-346.

Chou D W, Chen K L, Huang C J, et al. Efficient small-molecule organic solar cells incorporating a doped buffer layer[J]. Thin Solid Films, 2013, 536:235-239.

Park J W, Lim J T, Oh J S, et al. Electron-injecting properties of Rb2CO3-doped Alq3 thin films in organic light-emitting diodes[J]. Journal of Vacuum Science & Technology A, 2013, 31(3):031101.

Hong J W, Kim C H, Han H S, et al. Dependence of the efficiency improvement of organic light-emitting diodes on the thickness of the Cs2CO3 electron-injection layer[J]. Journal of the Korean Physical Society, 2012, 60(10):1611-1615.

Liu W B, Liu S H, Yu J, et al. Efficient inverted organic light-emitting devices with self or intentionally Ag-doped interlayer modified cathode[J]. Applied Physics Letters, 2014, 104(9):093305.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

Mini LED和OLED电视在不同环境光强度下的对比度和人眼感知实验研究

隧道磁阻传感器在OLED电流检测中的应用

极性相反结构的micro-LED和OLED混合集成显示器件的驱动

喷墨打印OLED发光层像素坑内成膜控制方法

OLED器件电学物理理论综述