TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究

王守坤; 袁剑峰; 郭会斌; 郭总杰; 李升玄; 邵喜斌

doi:10.3788/YJYXS20153006.0930

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TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究
- Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics
- 液晶与显示 2015年30卷第6期页码：930-936
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153006.0930
  中图分类号： TN321.5
- 收稿日期：2015-03-06，
  
  修回日期：2015-04-13，
  
  纸质出版日期：2015-12-05
- 稿件说明：
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王守坤, 袁剑峰, 郭会斌等. TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究[J]. 液晶与显示, 2015,30(6): 930-936

WANG Shou-kun, YUAN Jian-feng, GUO Hui-bin etc. Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics[J]. , 2015,30(6): 930-936
王守坤, 袁剑峰, 郭会斌等. TFT栅极绝缘层和非晶硅膜层的ITO污染对电学特性影响的研究[J]. 液晶与显示, 2015,30(6): 930-936 DOI： 10.3788/YJYXS20153006.0930.

WANG Shou-kun, YUAN Jian-feng, GUO Hui-bin etc. Influence of ITO contamination of TFT gate insulation & a-Si layers on electrical characteristics[J]. , 2015,30(6): 930-936 DOI： 10.3788/YJYXS20153006.0930.

摘要

本文对TFT在栅极绝缘层和非晶硅膜层沉积过程中

透明电极ITO成分对膜层的污染和TFT电学性质的影响进行分析研究。通过二次离子质谱分析和电学测试设备对样品进行分析。ITO成分会对PECVD设备、栅极绝缘层和非晶硅膜层产生污染

并会影响TFT的电学特性。建议采用独立的PECVD设备完成ITO膜层上面的栅极绝缘层和非晶硅膜层的沉积

并且对设备进行周期性清洗

可降低ITO成分的污染和提高产品的电学性能。

Abstract

Indium-tin-oxide (ITO) films as transparent conductive are applied on TFT.This paper studied the influence of ITO contamination of gate insulation & a-Si layers and TFT on electrical characteristics.The obtained samples were characterized by secondary ion mass spectroscopy (SIMS) and electronic parameter measurement (EPM).The result shown on the gate insulation & a-Si layers had been contaminated by ITO in the PECVD equipment

and the contamination can make TFT electrical characteristics become worse.ITO concentration in process equipments plays an important role in the TFT electrical characteristics.Therefore

we suggest the gate insulation & a-Si layers should be deposited in independent equipment and the PECVD equipment should be cleaned periodically. Thus

the ITO contamination can be reduced and TFT electrical characteristics can also be improved.

关键词

Keywords

references

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