干法刻蚀工艺对TFT-LCD Flicker改善的研究

李鑫; 卞丽丽; 陈曦; 吴成龙; 贠向南

doi:10.3788/YJYXS20153006.0904

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干法刻蚀工艺对TFT-LCD Flicker改善的研究

材料物理和化学 | 更新时间：2020-08-12

- 干法刻蚀工艺对TFT-LCD Flicker改善的研究
- Improvement of flicker TFT-LCD by dry etching process
- 液晶与显示 2015年30卷第6期页码：904-908
- 作者机构：
  
  福州京东方光电科技有限公司,福建福州,350330
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153006.0904
  中图分类号： TN141.9
- 收稿日期：2015-05-29，
  
  修回日期：2015-06-23，
  
  纸质出版日期：2015-12-05
- 稿件说明：
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李鑫, 卞丽丽, 陈曦等. 干法刻蚀工艺对TFT-LCD Flicker改善的研究[J]. 液晶与显示, 2015,30(6): 904-908

LI Xin, BIAN Li-li, CHEN Xi etc. Improvement of flicker TFT-LCD by dry etching process[J]. , 2015,30(6): 904-908
李鑫, 卞丽丽, 陈曦等. 干法刻蚀工艺对TFT-LCD Flicker改善的研究[J]. 液晶与显示, 2015,30(6): 904-908 DOI： 10.3788/YJYXS20153006.0904.

LI Xin, BIAN Li-li, CHEN Xi etc. Improvement of flicker TFT-LCD by dry etching process[J]. , 2015,30(6): 904-908 DOI： 10.3788/YJYXS20153006.0904.

摘要

为了对TFT-LCD中的闪烁不良进行改善

本文通过研究TFT-LCD中干法刻蚀(Nplus Etch)对TFT特性的影响

以此对刻蚀条件(Power、Gas)进行优化

达到降低Photo-I

off

的目的。实验结果表明

当干法刻蚀主工艺条件为:Source/Bias=4 k/5 k、Press=90 mT、SF

=1.1 k/3 kml/min

AT Step条件为:Source/Bias=2 k/2 k、Press=100 mT、SF

=3 k/3 kmL/min时

Photo-I

off

由量产最初的58.15降至20.52

闪烁由15%~30%降至10%以下。干法刻蚀工艺条件的优化对TFT特性以及闪烁有明显改善效果。

Abstract

To improve the flicker in TFT-LCD

by studying the influence of Dry Etch(Nplus Etch) on TFT characteristics

the etching conditions (power and gas) were optimized

and the Photo-I

off

was reduced

then the flicker was improved.Experimental results show that when the main process conditions of Nplus Etch were:Source/Bias=4 k/5 k

Press=90 mT

=1.1 k/3 kmL/min and the conditions of AT Step were:Source/Bias=2 k/2 k

Press=100 mT

=3 k/3 kmL/min

the Photo-I

off

fell from 58.15 to 20.52 and the flicker fell from 15%-30% to 10% or less.The optimization of Dry Etching process has obvious improvement to TFT characteristics and flicker.

关键词

Keywords

references

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