TFT有源层刻蚀均一性和电学性质的研究

王守坤; 袁剑峰; 郭总杰; 郭会斌; 刘杰; 郑云友; 贠向南; 李升玄; 邵喜斌

doi:10.3788/YJYXS20153005.0801

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TFT有源层刻蚀均一性和电学性质的研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- TFT有源层刻蚀均一性和电学性质的研究
- Analysis of etching uniformity of active layers and electrical characteristics of thin film transistor electrode
- 液晶与显示 2015年30卷第5期页码：801-806
- 作者机构：
  
  北京京东方显示技术有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153005.0801
  中图分类号： TN321.5
- 收稿日期：2015-01-28，
  
  修回日期：2015-03-26，
  
  网络出版日期：2015-04-03，
  
  纸质出版日期：2015-10-05
- 稿件说明：
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王守坤, 袁剑峰, 郭总杰, 郭会斌, 刘杰, 郑云友, 贠向南, 李升玄, 邵喜斌. TFT有源层刻蚀均一性和电学性质的研究[J]. 液晶与显示, 2015,30(5): 801-806

WANG Shou-kun, YUAN Jian-feng, GUO Zong-jie, GUO Hui-bin, LIU Jie, ZHENG Yun-you, YUN Xiang-nan, LI Sheng-xuan, SHAO Xi-bin. Analysis of etching uniformity of active layers and electrical characteristics of thin film transistor electrode[J]. , 2015,30(5): 801-806
王守坤, 袁剑峰, 郭总杰, 郭会斌, 刘杰, 郑云友, 贠向南, 李升玄, 邵喜斌. TFT有源层刻蚀均一性和电学性质的研究[J]. 液晶与显示, 2015,30(5): 801-806 DOI： 10.3788/YJYXS20153005.0801.

WANG Shou-kun, YUAN Jian-feng, GUO Zong-jie, GUO Hui-bin, LIU Jie, ZHENG Yun-you, YUN Xiang-nan, LI Sheng-xuan, SHAO Xi-bin. Analysis of etching uniformity of active layers and electrical characteristics of thin film transistor electrode[J]. , 2015,30(5): 801-806 DOI： 10.3788/YJYXS20153005.0801.

摘要

对TFT制作工艺中

TFT有源层刻蚀均一性与电学性质进行分析研究。通过扫描电子显微镜

电学测试设备对样品进行分析。结果显示沟道有源层的刻蚀功率

气体比例及刻蚀压强对有源层的刻蚀均一性都有较大影响

并会影响TFT电学特性的均一性。通过适当降低刻蚀功率及反应气体SF

/Cl

的比例

同时

降低反应压强

可以改善有源层刻蚀的均一性。从而

TFT电学特性的均匀性得到优化。

Abstract

Active layers(a-Si) were etched by enhance cathode couple plasma(ECCP) and used as electronic channels in the thin film transistors.The uniformity of active layers and electrical characteristics were studied. The obtained samples were characterized by scanning electron microscopy (SEM) and electronic parameter measurement. The etching power

gas ratio and etching pressure played an important role in uniformity of active layers

which can cause the issue about TFT electrical characteristics. The uniformity of active layers can be improved by reduced the ratio about etching power ratio (source power/bias power) and reaction gas ratio (SF

/Cl

)

meanwhile

reaction pressure was also reduced. Therefore

the uniformity of TFT electrical characteristics can also be improved.

关键词

Keywords

references

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