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上海大学新型显示技术及应用集成教育部重点实验室 上海,200072
收稿日期:2014-11-06,
修回日期:2015-02-15,
纸质出版日期:2015-10-05
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陈龙龙, 张建华, 李喜峰, 石继锋, 孙翔. 基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J]. 液晶与显示, 2015,30(5): 796-800
CHEN Long-long, ZHANG Jian-hua, LI Xi-feng, SHI Ji-feng, SUN Xiang. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J]. , 2015,30(5): 796-800
陈龙龙, 张建华, 李喜峰, 石继锋, 孙翔. 基于柔性PI基底的氧化物IGZO TFT器件工艺及特性研究[J]. 液晶与显示, 2015,30(5): 796-800 DOI: 10.3788/YJYXS20153005.0796.
CHEN Long-long, ZHANG Jian-hua, LI Xi-feng, SHI Ji-feng, SUN Xiang. Process and properties of oxide IGZO TFT device based on flexible PI substrate[J]. , 2015,30(5): 796-800 DOI: 10.3788/YJYXS20153005.0796.
讨论了基于柔性PI基底上的底栅型TFT器件工艺
通过工艺优化解决了双层结构干刻速率不同造成的下切角形状。本文TFT器件是基于氧化物IGZO为有源层
栅绝缘层采用Si
3
N
4
/SiO
2
双层结构
采用两次补偿曝光、干刻方式消除干刻引入的下切角形状
有效解决了薄膜沉积引入的断线风险。实验结果表明
经过SEM断面观察
干刻后双层结构taper角度适合TFT器件后续沉膜条件
柔性基底上制作的TFT器件迁移率达到14.8 cm
2
/(Vs)
阈值电压
V
th
约0.5 V
亚域值摆幅SS约0.5 V/decade
TFT器件的开关比
I
on
/
I
off
>
10
6
。通过此方法制作出的器件性能良好
满足LCD、OLED或电子纸的驱动要求。
Bottom-gate structure TFT device technology on flexible PI substrate was discussed in the paper. Undercut shape of the double layer caused by the different dry etching rate was solved by the improvement of technics. The TFT device was based on IGZO as active layer
and Si
3
N
4
/SiO
2
double layer structure was employed as gate insulator
undercut shape introduced thin film deposition break risk was effectively solved using two times of exposure compensation. The experimental results show that
the taper angle of double-layer structure after dry etching which was observed using SEM was suitable for following film deposition of TFT devices. The mobility of TFT on flexible PI substrate reaches 14.8 cm
2
/(Vs)
threshold voltage of
V
th
is about 0.5 V
subthreshold swing (SS) is about 0.5 V/decade
and ratio of
I
on
/
I
off
is upper 10
6
. TFT device performance by this method is good
and meets the driving requirements of LCD
OLED or electronic paper.
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